A semiconductor device has a substrate. A plurality of conductive vias is formed through the substrate. A conductive layer is formed over the substrate. An insulating layer is formed over conductive layer. A portion of the substrate is removed to expose the conductive vias. A plurality of vertical interconnect structures is formed over the substrate. A first semiconductor die is disposed over the substrate. A height of the vertical interconnect structures is less than a height of the first semiconductor die. An encapsulant is deposited over the first semiconductor die and the vertical interconnect structures. A first portion of the encapsulant is removed from over the first semiconductor die while leaving a second portion of the encapsulant over the vertical interconnect structures. The second portion of the encapsulant is removed to expose the vertical interconnect structures. A second semiconductor die is disposed over the first semiconductor die.

A display device and chip bonding method thereof are provided. The display device includes a flexible display panel and a chip bonded to the non-display area of the flexible display panel with the extension directions of individual bumps satisfying, depending on the area in which the bumps are located, the following requirements: in each row of bumps, at least the individual bumps in lateral zones have their extension lines on the same side converging at a same point on the reference line, and the two bumps belong to a same bump group have their extension lines respectively forming an angle with respect to the reference line, the angles being equal to each other.

A three-dimensional mounting method for successively laminating N number of upper-layer joining materials includes positioning a first upper-layer joining material relative to a lowermost-layer joining material by recognizing an alignment position of the lowermost-layer joining material and a lower face alignment position of the first upper-layer joining material by a two-field image recognition unit, storing positional coordinates of the alignment position of the lowermost-layer joining material, positioning an (n+1)-th upper-layer joining material relative to an n-th upper-layer joining material by recognizing an upper face alignment position of the n-th upper-layer joining material and a lower face alignment position of the (n+1)-th upper-layer joining material, storing positional coordinates of the upper face alignment position of the n-th upper-layer joining material, recognizing an upper face alignment position of the N-th uppermost-layer joining material, and storing positional coordinates of the upper face alignment position of the N-th uppermost-layer joining material.

Proximity coupling interconnect packaging systems and methods. A semiconductor package assembly comprises a substrate, a first semiconductor die disposed adjacent the substrate, and a second semiconductor die stacked over the first semiconductor die. There is at least one proximity coupling interconnect between the first semiconductor die and the second semiconductor die, the proximity coupling interconnect comprising a first conductive pad on the first coupling face on the first semiconductor die and a second conductive pad on a second coupling face of the second semiconductor die, the second conductive pad spaced apart from the first conductive pad by a gap distance and aligned with the first conductive pad. An electrical connector is positioned laterally apart from the proximity coupling interconnect and extends between the second semiconductor die and the substrate, the position of the electrical connector defining the alignment of the first conductive pad and the second conductive pad.

Proximity coupling interconnect packaging systems and methods. A semiconductor package assembly comprises a substrate, a first semiconductor die disposed adjacent the substrate, and a second semiconductor die stacked over the first semiconductor die. There is at least one proximity coupling interconnect between the first semiconductor die and the second semiconductor die, the proximity coupling interconnect comprising a first conductive pad on the first coupling face on the first semiconductor die and a second conductive pad on a second coupling face of the second semiconductor die, the second conductive pad spaced apart from the first conductive pad by a gap distance and aligned with the first conductive pad. An electrical connector is positioned laterally apart from the proximity coupling interconnect and extends between the second semiconductor die and the substrate, the position of the electrical connector defining the alignment of the first conductive pad and the second conductive pad.

Provided is a semiconductor device including an asymmetric electrode arrangement in which a plurality of electrodes are arranged asymmetrically in a vertical or horizontal direction.

An underfill material having sufficient curing reactivity, and capable of achieving a small change in viscosity and good electrical connection even when loaded with thermal history, a laminated sheet including the underfill material, and a method for manufacturing a semiconductor device. The underfill material has a melt viscosity at 150 C. before heating treatment of 50 Pa.Math.s or more and 3,000 Pa.Math.s or less, a viscosity change rate of 500% or less, at 150 C. as a result of the heating treatment, and a reaction rate represented by {(QtQh)/Qt}100% of 90% or more, where Qt is a total calorific value in a process of temperature rise from 50 C. to 300 C. and Qh is a total calorific value in a process of temperature rise from 50 C. to 300 C. after heating at 175 C. for 2 hours in a DSC measurement.

A three-dimensional mounting method for successively laminating N number of upper-layer joining materials includes positioning a first upper-layer joining material relative to a lowermost-layer joining material by recognizing an alignment position of the lowermost-layer joining material and a lower face alignment position of the first upper-layer joining material by a two-field image recognition unit, storing positional coordinates of the alignment position of the lowermost-layer joining material, positioning an (n+1)-th upper-layer joining material relative to an n-th upper-layer joining material by recognizing an upper face alignment position of the n-th upper-layer joining material and a lower face alignment position of the (n+1)-th upper-layer joining material, storing positional coordinates of the upper face alignment position of the n-th upper-layer joining material, recognizing an upper face alignment position of the N-th uppermost-layer joining material, and storing positional coordinates of the upper face alignment position of the N-th uppermost-layer joining material.