A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate and a metal holder. The substrate includes at least one bonding pad disposed adjacent to its surface and the metal holder is disposed adjacent to the bonding pad.

An integrated circuit (IC) package product, e.g., system-on-chip (SoC) or system-in-package (SiP) product, may include at least one integrated inductor having a core magnetic field (B field) that extends parallel to the substrate major plane of at least one die or chiplet included in or mounted to the product, which may reduce the eddy currents within each die/chiplet substrate, and thereby reduce energy loss of the indictor. The IC package product may include a horizontally-extending IC package substrate, a horizontally-extending die mount base arranged on the IC package substrate, at least one die mounted to the die mount base in a vertical orientation, and an integrated inductor having a B field extending in a vertical direction parallel to the silicon substrate of each vertically-mounted die, thereby providing a reduced substrate loss in the integrated inductor, which provides an increased quality factor (Q) of the inductor.

A method includes patterning a cavity through a first passivation layer of a first package component, the first package component comprising a first semiconductor substrate and bonding the first package component to a second package component. The second package component comprises a second semiconductor substrate and a second passivation layer. Bonding the first package component to the second package component comprises directly bonding the first passivation layer to the second passivation layer; and reflowing a solder region of a conductive connector disposed in the cavity to electrically connect the first package component to the second package component.

In an embodiment a method includes providing a semiconductor chip having a plurality of contact pins, at least one positioning pin and an underside, wherein the contact pins and the positioning pin protrude from the underside, respectively, wherein the contact pins are configured for making electrical contact with the semiconductor chip, wherein the positioning pin narrows in a direction away from the underside, and wherein the positioning pin protrudes further from the underside than the contact pins, providing a connection carrier having a plurality of contact recesses, at least one positioning recess and an upper side, wherein each contact recess is at least partially filled with a solder material, heating the solder material in the contact recesses to a joining temperature at which the solder material at least partially melts and placing the semiconductor chip on the connection carrier, wherein each contact pin is inserted into a contact recess and the positioning pin is inserted into the positioning recess.

A semiconductor chip including a semiconductor substrate having a first surface and a second surface and having an active layer in a region adjacent to the first surface, a first through electrode penetrating at least a portion of the semiconductor substrate and connected to the active layer, a second through electrode located at a greater radial location from the center of the semiconductor substrate than the first through electrode, penetrating at least a portion of the semiconductor substrate, and connected to the active layer. The semiconductor chip also including a first chip connection pad having a first height and a first width, located on the second surface of the semiconductor substrate, and connected to the first through electrode, and a second chip connection pad having a second height greater than the first height and a second width greater than the first width, located on the second surface of the semiconductor substrate, and connected to the second through electrode.

The present application provides a semiconductor package with air gaps for reducing capacitive coupling between conductive features and a method for manufacturing the semiconductor package. The semiconductor package includes a first semiconductor structure and a second semiconductor structure bonded with the first semiconductor structure. The first semiconductor structure has a first bonding surface. The second semiconductor structure has a second bonding surface partially in contact with the first bonding surface. A portion of the first bonding surface is separated from a portion of the second bonding surface, a space between the portions of the first and second bonding surfaces is sealed and forms an air gap in the semiconductor package.

A connection arrangement for forming a component carrier structure is disclosed. The connection arrangement includes a first electrically conductive connection element and a second electrically conductive connection element. The first connection element and the second connection element are configured such that, upon connecting the first connection element with the second connection element along a connection direction, a form fit is established between the first connection element and the second connection element that limits a relative motion between the first connection element and the second connection element in a plane perpendicular to the connection direction. A component carrier and a method of forming a component carrier structure are also disclosed.

A semiconductor device comprises a substrate having a substrate top side, a substrate lateral side, and a substrate bottom side, an electronic device on the substrate top side, and an encapsulant on the substrate top side and contacting a lateral surface of the electronic device. The substrate comprises a conductive structure and a dielectric structure that extends comprising a protrusion in contact with the encapsulant. The conductive structure comprises a lead comprising a lead flank, the lead flank comprising a cavity and a conductive coating on a surface of the lead in the cavity. The conductive structure comprises a pad exposed at the substrate top side, embedded in the dielectric structure, and adjacent to the protrusion, to electrically couple with the electronic device via a first internal interconnect. Other examples and related methods are also disclosed herein.

A semiconductor device includes a conductive can include a flat portion and at least one peripheral rim portion extending from an edge of the flat portion, a semiconductor die comprising a first main face and a second main face opposite to the first main face, a first contact pad disposed on the first main face and a second contact pad disposed on the second main face, wherein the first contact pad is electrically connected to the flat portion of the can, an electrical interconnector connected with the second contact pad, and an encapsulant disposed under the semiconductor die so as to surround the electrical interconnector, wherein an external surface of the electrical interconnector is recessed from an external surface of the encapsulant.

Packages for semiconductor devices, packaged semiconductor devices, and methods of packaging semiconductor devices are disclosed. In some embodiments, a package for a semiconductor device includes an integrated circuit die mounting region, a molding material around the integrated circuit die mounting region, and an interconnect structure over the molding material and the integrated circuit die mounting region. The interconnect structure has contact pads, and connectors are coupled to the contact pads. Two or more of the connectors have an alignment feature formed thereon.