An apparatus relating generally to a substrate is disclosed. In such an apparatus, a first bond via array has first wires extending from a surface of the substrate. A second bond via array has second wires extending from the surface of the substrate. The first bond via array is disposed at least partially within the second bond via array. The first wires of the first bond via array are of a first height. The second wires of the second bond via array are of a second height greater than the first height for coupling of at least one die to the first bond via array at least partially disposed within the second bond via array.

A semiconductor device package and a fabrication method thereof are disclosed. The semiconductor package comprises: a package component having a first mounting surface and a second mounting surface; and a first electronic component having a first conductive pad signal communicatively mounted on the first mounting surface through a first type connector; wherein the first type connector comprises a first solder composition having a lower melting point layer sandwiched between a pair of higher melting point layers, wherein the lower melting point layer is composed of alloys capable of forming a room temperature eutectic.

Even in a case where a pad becomes smaller, solder connection strength is improved. A semiconductor device includes a pad, a diffusion layer, and a melting layer. The pad included by the semiconductor device includes a concave portion on a surface at which solder connection is to be performed. The diffusion layer included by the semiconductor device is disposed at the concave portion and constituted with a metal which remains on the surface of the pad while diffusing into solder upon the solder connection. The melting layer included by the semiconductor device is disposed adjacent to the diffusion layer and constituted with a metal which diffuses and melts into the solder upon the solder connection.

Even in a case where a pad becomes smaller, solder connection strength is improved. A semiconductor device includes a pad, a diffusion layer, and a melting layer. The pad included by the semiconductor device includes a concave portion on a surface at which solder connection is to be performed. The diffusion layer included by the semiconductor device is disposed at the concave portion and constituted with a metal which remains on the surface of the pad while diffusing into solder upon the solder connection. The melting layer included by the semiconductor device is disposed adjacent to the diffusion layer and constituted with a metal which diffuses and melts into the solder upon the solder connection.

In an embodiment a method includes providing a semiconductor chip having a plurality of contact pins, at least one positioning pin and an underside, wherein the contact pins and the positioning pin protrude from the underside, respectively, wherein the contact pins are configured for making electrical contact with the semiconductor chip, wherein the positioning pin narrows in a direction away from the underside, and wherein the positioning pin protrudes further from the underside than the contact pins, providing a connection carrier having a plurality of contact recesses, at least one positioning recess and an upper side, wherein each contact recess is at least partially filled with a solder material, heating the solder material in the contact recesses to a joining temperature at which the solder material at least partially melts and placing the semiconductor chip on the connection carrier, wherein each contact pin is inserted into a contact recess and the positioning pin is inserted into the positioning recess.

A method of soldering includes providing a substrate having a first metal joining surface, providing a semiconductor die having a second metal joining surface, providing a solder preform having a first interface surface and a second interface surface, arranging the solder preform between the substrate and the semiconductor die such that the first interface surface faces the first metal joining surface and such that the second interface surface faces the second metal joining surface, and performing a mechanical pressure-free diffusion soldering process that forms a soldered joint between the substrate and the semiconductor die by melting the solder preform and forming intermetallic phases in the solder. One or both of the first interface surface and the second interface surface has a varying surface profile that creates voids between the solder preform and one or both of the substrate and the semiconductor die before the melting of the solder preform.

An interconnection layer carrying structure for transferring an interconnection layer onto a substrate is disclosed. The interconnection layer carrying structure includes a support substrate, a release layer on the support substrate; and an interconnection layer on the release layer. The interconnection layer includes an organic insulating material and a set of pads embedded in the organic insulating material. The set of the pads is configured to face towards the support substrate. The support substrate has a base part where the interconnection layer is formed and an extended part extending outside the base part.

An interconnection layer carrying structure for transferring an interconnection layer onto a substrate is disclosed. The interconnection layer carrying structure includes a support substrate, a release layer on the support substrate; and an interconnection layer on the release layer. The interconnection layer includes an organic insulating material and a set of pads embedded in the organic insulating material. The set of the pads is configured to face towards the support substrate. The support substrate has a base part where the interconnection layer is formed and an extended part extending outside the base part.

A semiconductor device includes a pad, a diffusion layer, and a melting layer. The pad included by the semiconductor device includes a concave portion on a surface at which solder connection is to be performed. The diffusion layer included by the semiconductor device is disposed at the concave portion and constituted with a metal which remains on the surface of the pad while diffusing into solder upon the solder connection. The melting layer included by the semiconductor device is disposed adjacent to the diffusion layer and constituted with a metal which diffuses and melts into the solder upon the solder connection.

No-remelt solder joints can eliminate die or substrate movement in downstream reflow processes. In one example, one or more solder joints between two substrates can be formed as full IMC (intermetallic compound) solder joints. In one example, a full IMC solder joint includes a continuous layer (e.g., from the top pad to bottom pad) of intermetallic compounds. In one example, a full IMC joint can be formed by dispensing a no-remelt solder paste on some of the pads of one or both substrates to be bonded together.