Connector structures and methods of forming the same are provided. A method includes forming a first patterned passivation layer on a workpiece, the first patterned passivation layer having a first opening exposing a conductive feature of the workpiece. A seed layer is formed over the first patterned passivation layer and in the first opening. A patterned mask layer is formed over the seed layer, the patterned mask layer having a second opening exposing the seed layer, the second opening overlapping with the first opening. A connector is formed in the second opening. The patterned mask layer is partially removed, an unremoved portion of the patterned mask layer remaining in the first opening. The seed layer is patterned using the unremoved portion of the patterned mask layer as a mask.

A system includes a semiconductor substrate having a first cavity. The semiconductor substrate forms a pedestal adjacent the first cavity. A device overlays the pedestal and is bonded to the semiconductor substrate by metal within the first cavity. A plurality of second cavities are formed in a surface of the pedestal beneath the device, wherein the second cavities are smaller than the first cavity. In some of these teachings, the second cavities are voids. In some of these teachings, the metal in the first cavity comprises a eutectic mixture. The structure relates to a method of manufacturing in which a layer providing a mask to etch the first cavity is segmented to enable easy removal of the mask-providing layer from the area over the pedestal.

A method of forming a bonding element including a first transient liquid phase (TLP) bonding element including a first material and a second material, the first material having a higher melting point than the second material, a ratio of a quantity of the first material and the second material in the first TLP bonding element having a first value, and a second TLP bonding element including the first material and the second material, a ratio of a quantity of the first material and the second material in the second TLP bonding element having a second value different from the first value.

Even in a case where a pad becomes smaller, solder connection strength is improved. A semiconductor device includes a pad, a diffusion layer, and a melting layer. The pad included by the semiconductor device includes a concave portion on a surface at which solder connection is to be performed. The diffusion layer included by the semiconductor device is disposed at the concave portion and constituted with a metal which remains on the surface of the pad while diffusing into solder upon the solder connection. The melting layer included by the semiconductor device is disposed adjacent to the diffusion layer and constituted with a metal which diffuses and melts into the solder upon the solder connection.

Structures and methods of fabricating semiconductor wafer assemblies that encapsulate one or die in a cavity etched into an oxide bonded semiconductor wafer stack. The methods generally include the steps of positioning the die in the cavity, mechanically and electrically mounting the die to the wafer stack, and encapsulating the die within the cavity by bonding a lid wafer to the wafer stack in one of multiple ways. Semiconductor processing steps are applied to construct the assemblies (e.g., deposition, annealing, chemical and mechanical polishing, etching, etc.) and connecting the die (e.g., bump bonding, wire interconnecting, ultrasonic bonding, oxide bonding, etc.) according to the embodiments described above.

Provided is a high density multi-component package and a method of manufacturing a high density multi-component package. The high density multi-component package comprises at least two electronic components wherein each electronic component of the electronic components comprise a first external termination and a second external termination. At least one interposer is between the adjacent electronic components and attached to the interposer by an interconnect wherein the interposer is selected from an active interposer and a mechanical interposer. Adjacent electronic components are connected serially.

Apparatus(es) and method(s) relate generally to via arrays on a substrate. In one such apparatus, the substrate has a conductive layer. First plated conductors are in a first region extending from a surface of the conductive layer. Second plated conductors are in a second region extending from the surface of the conductive layer. The first plated conductors and the second plated conductors are external to the first substrate. The first region is disposed at least partially within the second region. The first plated conductors are of a first height. The second plated conductors are of a second height greater than the first height. A second substrate is coupled to first ends of the first plated conductors. The second substrate has at least one electronic component coupled thereto. A die is coupled to second ends of the second plated conductors. The die is located over the at least one electronic component.

Apparatus(es) and method(s) relate generally to via arrays on a substrate. In one such apparatus, the substrate has a conductive layer. First plated conductors are in a first region extending from a surface of the conductive layer. Second plated conductors are in a second region extending from the surface of the conductive layer. The first plated conductors and the second plated conductors are external to the first substrate. The first region is disposed at least partially within the second region. The first plated conductors are of a first height. The second plated conductors are of a second height greater than the first height. A second substrate is coupled to first ends of the first plated conductors. The second substrate has at least one electronic component coupled thereto. A die is coupled to second ends of the second plated conductors. The die is located over the at least one electronic component.

An interconnection layer carrying structure for transferring an interconnection layer onto a substrate is disclosed. The interconnection layer carrying structure includes a support substrate, a release layer on the support substrate; and an interconnection layer on the release layer. The interconnection layer includes an organic insulating material and a set of pads embedded in the organic insulating material. The set of the pads is configured to face towards the support substrate. The support substrate has a base part where the interconnection layer is formed and an extended part extending outside the base part.

An interconnection layer carrying structure for transferring an interconnection layer onto a substrate is disclosed. The interconnection layer carrying structure includes a support substrate, a release layer on the support substrate; and an interconnection layer on the release layer. The interconnection layer includes an organic insulating material and a set of pads embedded in the organic insulating material. The set of the pads is configured to face towards the support substrate. The support substrate has a base part where the interconnection layer is formed and an extended part extending outside the base part.