A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

A semiconductor module can comprise a fully molded base portion comprising a planar surface that further comprises a semiconductor die comprising contact pads, conductive pillars coupled to the contact pads and extending to the planar surface, and an encapsulant material disposed over the active surface, four side surfaces, and around the conductive pillars, wherein ends of the conductive pillars are exposed from the encapsulant material at the planar surface of the fully molded base portion. A build-up interconnect structure comprising a routing layer can be disposed over the fully molded base portion. A photo-imagable solder mask material can be disposed over the routing layer and comprise openings to form surface mount device (SMD) land pads electrically coupled to the semiconductor die and the conductive pillars. A SMD component can be electrically coupled to the SMD land pads with surface mount technology (SMT).

A semiconductor module can comprise a fully molded base portion comprising a planar surface that further comprises a semiconductor die comprising contact pads, conductive pillars coupled to the contact pads and extending to the planar surface, and an encapsulant material disposed over the active surface, four side surfaces, and around the conductive pillars, wherein ends of the conductive pillars are exposed from the encapsulant material at the planar surface of the fully molded base portion. A build-up interconnect structure comprising a routing layer can be disposed over the fully molded base portion. A photo-imagable solder mask material can be disposed over the routing layer and comprise openings to form surface mount device (SMD) land pads electrically coupled to the semiconductor die and the conductive pillars. A SMD component can be electrically coupled to the SMD land pads with surface mount technology (SMT).

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, ranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, ranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

A composition for use in an electronic assembly process, the composition comprising a filler dispersed in an organic medium, wherein: the organic medium comprises a polymer; the filler comprises one or more of graphene, functionalized graphene, graphene oxide, a polyhedral oligomeric silsesquioxane, graphite, a 2D material, aluminum oxide, zinc oxide, aluminum nitride, boron nitride, silver, nano fibers, carbon fibers, diamond, carbon nanotubes, silicon dioxide and metal-coated particles, and the composition comprises from 0.001 to 40 wt. % of the filler based on the total weight of the composition.

A composition for use in an electronic assembly process, the composition comprising a filler dispersed in an organic medium, wherein: the organic medium comprises a polymer; the filler comprises one or more of graphene, functionalized graphene, graphene oxide, a polyhedral oligomeric silsesquioxane, graphite, a 2D material, aluminum oxide, zinc oxide, aluminum nitride, boron nitride, silver, nano fibers, carbon fibers, diamond, carbon nanotubes, silicon dioxide and metal-coated particles, and the composition comprises from 0.001 to 40 wt. % of the filler based on the total weight of the composition.

A method for fabricating an electronic device includes fixing a rear face of an integrated-circuit chip to a front face of a support wafer. An infused adhesive is applied in the form of drops or segments that are separated from each other. A protective wafer is applied to the infused adhesive, and the infused adhesive is cured. The infused adhesive includes a curable adhesive and solid spacer elements infused in the curable adhesive. A closed intermediate peripheral ring is deposited on the integrated-circuit chip outside the cured infused adhesive, and an encapsulation block is formed such that it surrounds the chip, the protective wafer and the closed intermediate peripheral ring.