A package comprising a chip carrier, an electronic chip on the chip carrier, a clip on the electronic chip, an encapsulant at least partially encapsulating the electronic chip, and an electrically conductive vertical connection structure provided separately from the clip and electrically connecting the chip carrier with the clip.

A semiconductor package structure is provided. The semiconductor package structure includes a semiconductor chip, a guard ring, a gel layer, and a first lead frame. The guard ring is disposed on the semiconductor chip, and the gel layer is disposed on the guard ring. The first lead frame is electrically connected to the semiconductor chip, and the gel layer is located between the guard ring and the first lead frame.

A method for fabricating a semiconductor device includes providing a semiconductor die, arranging an electrical connector over the semiconductor die, the electrical connector including a conductive core, an absorbing feature arranged on a first side of the conductive core, and a solder layer arranged on a second side of the conductive core, opposite the first side and facing the semiconductor die, and soldering the electrical connector onto the semiconductor die by heating the solder layer with a laser, wherein the laser irradiates the absorbing feature and absorbed energy is transferred from the absorbing feature through the conductive core to the solder layer.

A pre-soldered circuit carrier includes a carrier having a metal die attach surface, a plated solder region on the metal die attach surface, wherein a maximum thickness of the plated solder region is at most 50 ?m, the plated solder region has a lower melting point than the first bond pad, and the plated solder region forms one or more intermetallic phases with the die attach surface at a soldering temperature that is above the melting point of the plated solder region.

A semiconductor package structure is provided. The semiconductor package structure includes a semiconductor chip, a guard ring, a gel layer, and a first lead frame. The guard ring is disposed on the semiconductor chip, and the gel layer is disposed on the guard ring. The first lead frame is electrically connected to the semiconductor chip, and the gel layer is located between the guard ring and the first lead frame.

A method of producing a semiconductor device includes providing a semiconductor die, providing a metal joining partner, forming a diffusion solderable region by an inkjet metal printing process, forming an assembly to include the diffusion solderable region in between the metal joining partner and the semiconductor die, and performing a diffusion soldering process that forms a soldered joint from the diffusion solderable region in between the semiconductor die and the metal joining partner.

A pre-soldered circuit carrier includes a carrier having a metal die attach surface, a plated solder region on the metal die attach surface, wherein a maximum thickness of the plated solder region is at most 50 m, the plated solder region has a lower melting point than the first bond pad, and the plated solder region forms one or more intermetallic phases with the die attach surface at a soldering temperature that is above the melting point of the plated solder region.

A semiconductor package structure is provided. The semiconductor package structure includes a semiconductor chip, a guard ring, a gel layer, and a first lead frame. The guard ring is disposed on the semiconductor chip, and the gel layer is disposed on the guard ring. The first lead frame is electrically connected to the semiconductor chip, and the gel layer is located between the guard ring and the first lead frame.

A method of producing a semiconductor device includes providing a semiconductor die, providing a metal joining partner, forming a diffusion solderable region by an inkjet metal printing process, forming an assembly to include the diffusion solderable region in between the metal joining partner and the semiconductor die, and performing a diffusion soldering process that forms a soldered joint from the diffusion solderable region in between the semiconductor die and the metal joining partner.

A method of producing a semiconductor device includes providing a semiconductor die, providing a metal joining partner, forming a diffusion solderable region by an inkjet metal printing process, forming an assembly to include the diffusion solderable region in between the metal joining partner and the semiconductor die, and performing a diffusion soldering process that forms a soldered joint from the diffusion solderable region in between the semiconductor die and the metal joining partner.