On the assumption that a pair of hanging parts is provided in a lead frame and a clip includes a main body part and a pair of extension parts, the pair of the extension parts is mounted and supported on the pair of the hanging parts. Accordingly, the clip is mounted on a lead (one point) and the pair of the hanging parts (two points), and the clip is supported by the three points.

On the assumption that a pair of hanging parts is provided in a lead frame and a clip includes a main body part and a pair of extension parts, the pair of the extension parts is mounted and supported on the pair of the hanging parts. Accordingly, the clip is mounted on a lead (one point) and the pair of the hanging parts (two points), and the clip is supported by the three points.

The semiconductor device of the present invention is a semiconductor device in which a first semiconductor chip including a first field effect transistor for a high-side switch, a second semiconductor chip including a second field effect transistor for a low-side switch, and a third semiconductor chip including a circuit that controls each of the first and second semiconductor chips are sealed with a sealing portion. A lead electrically connected to a pad of the first semiconductor chip for a source of the first field effect transistor and a lead electrically connected to a back-surface electrode of the second semiconductor chip for a drain of the second field effect transistor are disposed on the same side of the sealing portion in a plan view.

The semiconductor device of the present invention is a semiconductor device in which a first semiconductor chip including a first field effect transistor for a high-side switch, a second semiconductor chip including a second field effect transistor for a low-side switch, and a third semiconductor chip including a circuit that controls each of the first and second semiconductor chips are sealed with a sealing portion. A lead electrically connected to a pad of the first semiconductor chip for a source of the first field effect transistor and a lead electrically connected to a back-surface electrode of the second semiconductor chip for a drain of the second field effect transistor are disposed on the same side of the sealing portion in a plan view.

The present disclosure provides a power module with the integration of a control circuit at least, including: a power substrate; a power device mounted on the power substrate; and at least one control substrate which supports the control circuit, is electrically connected with the power substrate and disposed at an angle of inclination on a surface of the power substrate on which the power device is mounted; wherein the angle of inclination is greater than or equal to 45 degrees and smaller than or equal to 135 degrees. In the power module provided by the present disclosure, only the power substrate as well as the connections between the control substrate and the power substrate occupies the footprint area of the power module, and thus the horizontal footprint area of the power module is effectively reduced and thereby the power density of the power module is increased.

The present disclosure provides a power module with the integration of a control circuit at least, including: a power substrate; a power device mounted on the power substrate; and at least one control substrate which supports the control circuit, is electrically connected with the power substrate and disposed at an angle of inclination on a surface of the power substrate on which the power device is mounted; wherein the angle of inclination is greater than or equal to 45 degrees and smaller than or equal to 135 degrees. In the power module provided by the present disclosure, only the power substrate as well as the connections between the control substrate and the power substrate occupies the footprint area of the power module, and thus the horizontal footprint area of the power module is effectively reduced and thereby the power density of the power module is increased.

This invention discloses a semiconductor package with adhesive material pre-printed on the lead frame and chip, and the manufacturing method. The adhesive material is applied onto the chip carrier and the pin of the lead frame and also on the front electrode of the semiconductor chip via pre-printing. The back of the semiconductor chip is adhered on the chip carrier, and the front electrode of the semiconductor chip and the pin are connected respectively with a metal connector. The size, shape and thickness of the adhesive material are applied according to different application requirements according to size and shapes of the contact zone of the semiconductor chip and the metal connector. Particularly, the adhesive zones are formed by pre-printing the adhesive material thus significantly enhance the quality and performance of semiconductor products, and improves the productivity.

On the assumption that a pair of hanging parts is provided in a lead frame and a clip includes a main body part and a pair of extension parts, the pair of the extension parts is mounted and supported on the pair of the hanging parts. Accordingly, the clip is mounted on a lead (one point) and the pair of the hanging parts (two points), and the clip is supported by the three points.

On the assumption that a pair of hanging parts is provided in a lead frame and a clip includes a main body part and a pair of extension parts, the pair of the extension parts is mounted and supported on the pair of the hanging parts. Accordingly, the clip is mounted on a lead (one point) and the pair of the hanging parts (two points), and the clip is supported by the three points.

An electronic package module and a method for fabrication of the same are provided. The method includes providing an electronic component assembly and a circuit substrate. The electronic component assembly includes two electronic components and a conductive structure. The electronic components are connected to each other through a conductive adhesive material, while the electronic components are connected to the conductive structure through another conductive adhesive material. A soldering material is formed on the circuit substrate, and the electronic component assembly is disposed on the soldering material. The melting points of the conductive adhesive materials are higher than the melting point of the soldering material. As a result, the conductive adhesive materials are prevented from failure during the soldering process, and thus the process yield is improved.