In order to easily and accurately measure an offset for wire bonding and improve precision of wire bonding, a wiring bonding apparatus includes a first imaging unit, a bonding tool, a moving mechanism, a reference member, a second imaging unit arranged on the opposite side to the bonding tool and the first imaging unit with respect to a reference surface, and a control unit. The first imaging unit detects a position of an optical axis of the first image capture unit with respect to a position of the reference member, the second imaging unit detects the position of the reference member when moving the bonding tool above the reference member according to pre-stored offset values, and detects a position of a ball-shaped tip section of a wire, and the control unit measures a change in offset between the bonding tool and the first imaging unit based on each detection result.

The manufacturing method of a semiconductor device can improve the mechanical strength of a pad more than before, and suppress the occurrence of a crack. The manufacturing method of a semiconductor device includes: forming a first pad constituted by a first metal layer; forming an insulating layer on the first pad; providing an opening portion in the insulating layer by removing the insulating layer on at least a partial region of the first pad; forming a second pad constituted by a second metal layer in the opening portion of the insulating layer so as to have a film thickness that is smaller than the film thickness of the insulating layer; and forming a third pad constituted by a third metal layer on the second pad.

Disclosed are systems, devices, apparatus, tools, coaxial cables, materials, methods, and other implementations that include a method comprising controllably stripping, through one or more applications of energy directed at a micro coaxial cable, a conductive shield layer of the micro coaxial cable to expose a portion of a core conductive wire of the micro coaxial wire, and controllably deforming the exposed portion of the core conductive wire of the micro coaxial wire through the one or more applications of energy.

A semiconductor package is disclosed including a number of stacked semiconductor die, electrically connected to each other with wire bonds. The stacked semiconductor die are provided in a mold compound such that a spacing exists between a top die in the die stack and a surface of the mold compound. The wire bonds to the top die may be provided in the spacing. An RDL pad is affixed to the surface of the mold compound. Columns of bumps may be formed on the die bond pads of the top die in the die stack to electrically couple the RDL pad to the die stack across the spacing.

A light emitting device includes a base member, a light emitting element, a wire, a protective film, first and second resin members, and a light shielding portion. The base member has a conductive member. The wire connects the light emitting element and the conductive member. The protective film covers the conductive member to be spaced apart from a portion of a connecting portion. The first resin member continuously covers at least a portion of each of the protective film, a portion of the conductive member around the connecting portion, and the wire. The first resin member contains first light reflecting particles to reflect light emitted by the light emitting element. The second resin member covers the light emitting element and the first resin member. The light shielding portion is disposed on the base member and disposed on a line connecting the light emitting element and the first resin member.

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

Disclosed is a method of measuring a free air ball size during a wire bonding process of a wire bonder, which comprises a position sensor and a bonding tool for forming an electrical connection between a semiconductor device and a substrate using a bonding wire. Specifically, the method comprises the steps of: forming a free air ball from a wire tail of the bonding wire; using the position sensor to determine a positional difference between a first and a second position of the bonding tool with respect to a reference position, wherein the first position of the bonding tool is a position of the bonding tool with respect to the reference position when the free air ball contacts a conductive surface; and measuring the free air ball size based on the positional difference of the bonding tool as determined by the position sensor. A wire bonder configured to perform such a method is also disclosed.

A semiconductor device includes two or more semiconductor elements, a lead with island portions on which the semiconductor elements are mounted, a heat dissipation member for dissipating heat from the island portions, a bonding layer bonding the island portions and the heat dissipation member, and a sealing resin covering the semiconductor elements, the island portions and a part of the heat dissipation member. The bonding layer includes mutually spaced individual regions provided for the island portions, respectively.

An electronic device includes a bond wire with a first end bonded by a ball bond to a planar side of a first conductive plate, and a second end bonded by a stitch bond to a conductive stud bump at an angle greater than or equal to 60 degrees. A wirebonding method includes bonding the first end of the conductive bond wire to the first conductive plate includes forming a ball bond to join the first end of the conductive bond wire to a planar side of the first conductive plate by a ball bond, and bonding the second end of the conductive bond wire to the conductive stud bump includes forming a stitch bond to join the second end of the conductive bond wire to the conductive stud bump.

A method of forming a wire interconnect structure includes the steps of: (a) forming a wire bond at a bonding location on a substrate using a wire bonding tool; (b) extending a length of wire, continuous with the wire bond, to another location; (c) pressing a portion of the length of wire against the other location using the wire bonding tool; (d) moving the wire bonding tool, and the pressed portion of the length of wire, to a position above the wire bond; and (e) separating the length of wire from a wire supply at the pressed portion, thereby providing a wire interconnect structure bonded to the bonding location.