A gold-coated silver bonding wire includes: a core material containing silver as a main component; and a coating layer provided on a surface of the core material and containing gold as a main component. The gold-coated silver bonding wire contains gold in a range of not less than 2 mass % nor more than 7 mass %, and at least one sulfur group element selected from the group consisting of sulfur, selenium, and tellurium in a range of not less than 1 mass ppm nor more than 80 mass ppm, with respect to a total content of the bonding wire.

A semiconductor package includes a metallic pad and leads spaced from the metallic pad by a gap, the metallic pad including a roughened surface. The semiconductor package further includes a semiconductor die including bond pads, and an adhesive between the roughened surface of the metallic pad and the semiconductor die, therein bonding the semiconductor die to the metallic pad, wherein the adhesive includes a resin. The metallic pad further includes a groove surrounding the semiconductor die on the roughened surface, the groove having a surface roughness less than a surface roughness of the roughened surface of the metallic pad.

A semiconductor device capable of suppressing propagation of a crack caused by a temperature cycle at a bonding part between a bonding pad and a bonding wire is provided. A semiconductor device according to an embodiment includes a semiconductor chip having bonding pads and bonding wires. The bonding pad includes a barrier layer and a bonding layer formed on the barrier layer and formed of a material containing aluminum. The bonding wire is bonded to the bonding pad and formed of a material containing copper. An intermetallic compound layer formed of an intermetallic compound containing copper and aluminum is formed so as to reach the barrier layer from the bonding wire in at least a part of the bonding part between the bonding pad and the bonding wire.

The present disclosure provides a semiconductor package. The semiconductor package includes a carrier member, a plurality of inductors and a memory chip. The carrier member includes a first surface, a second surface and a centrally-located opening. The carrier member also includes a plurality of conductive pads on the second surface proximal to the opening. The memory chip is attached to the carrier member in a face-down manner. The memory chip includes a plurality of bidirectional and unidirectional signal-transmission pins electrically coupled to the inductors. The memory chip also includes a plurality of bonding pads. A plurality of bonding wires, passing through the opening, electrically connect the bonding pads on the memory chip to the conductive pads on the carrier member. A first insulative structure substantially encapsulates the memory chip and the inductors. A plurality of solder balls are attached to the second surface of the carrier member.

The present disclosure provides a semiconductor package. The semiconductor package includes a carrier member, a plurality of inductors and a memory chip. The carrier member includes a first surface, a second surface and a centrally-located opening. The carrier member also includes a plurality of conductive pads on the second surface proximal to the opening. The memory chip is attached to the carrier member in a face-down manner. The memory chip includes a plurality of bidirectional and unidirectional signal-transmission pins electrically coupled to the inductors. The memory chip also includes a plurality of bonding pads. A plurality of bonding wires, passing through the opening, electrically connect the bonding pads on the memory chip to the conductive pads on the carrier member. A first insulative structure substantially encapsulates the memory chip and the inductors. A plurality of solder balls are attached to the second surface of the carrier member.

Embodiments for a circuit board comprising a plurality of electrically conductive layers and a plurality of electrically non-conductive layers in a laminated stack are provided. The laminated stack defines a front face and a back face. A thermal conductive heat body extends from a die bond pad on the front face to an electrically conductive layer on the back face. The die bond pad is configured for a bare die to be mounted thereon. A bonding agent disposed around the thermal conductive heat body adhering the thermal conductive heat body to walls of an opening of the laminated stack and at least one of the plurality of electrically non-conductive layers are a monolithic structure. A plurality of wire bond pads on the front face adjacent to the die bond pad have a surface finish material thereon. The surface finish material is configured for wire bonding thereto.

Embodiments for a circuit board comprising a plurality of electrically conductive layers and a plurality of electrically non-conductive layers in a laminated stack are provided. The laminated stack defines a front face and a back face. A thermal conductive heat body extends from a die bond pad on the front face to an electrically conductive layer on the back face. The die bond pad is configured for a bare die to be mounted thereon. A bonding agent disposed around the thermal conductive heat body adhering the thermal conductive heat body to walls of an opening of the laminated stack and at least one of the plurality of electrically non-conductive layers are a monolithic structure. A plurality of wire bond pads on the front face adjacent to the die bond pad have a surface finish material thereon. The surface finish material is configured for wire bonding thereto.

A semiconductor package includes a conductive pad, a semiconductor die with an aluminum bond pad over a dielectric layer of the semiconductor die, a gold bump on the aluminum bond pad, a first intermetallic layer of gold and aluminum between the aluminum bond pad and the gold bump, a copper ball bond on the gold bump, a second intermetallic layer of copper and gold between the copper ball bond and the gold bump, a copper wire extending from the copper ball bond to the conductive pad, a stitch bond between the copper wire and the conductive pad.

A semiconductor package includes a lead frame having a die attach pad and a plurality of leads. A die is attached to the die attach pad and the electrically connected to the plurality of leads. The die includes a plurality of bond pads along a periphery of the die and a bond pad strip surrounding a circuit in the die. A first plurality of bond wires is bonded between first opposite sides of the bond pad strip. The first plurality of bond wires is aligned in a first direction. A second plurality of bond wires is bonded between second opposite sides of the bond pad strip. The second plurality of bond wires is aligned in a second direction. Mold compound covers portions of the lead frame, the die, the bond pad strip, the first plurality of bond wires and the second plurality of bond wires.

A semiconductor device manufacturing method includes a preparation step and a sinter bonding step. In the preparation step, a sinter-bonding work having a multilayer structure including a substrate, semiconductor chips, and sinter-bonding material layers is prepared. The semiconductor chips are disposed on, and will bond to, one side of the substrate. Each sinter-bonding material layer contains sinterable particles and is disposed between each semiconductor chip and the substrate. In the sinter bonding step, a cushioning sheet having a thickness of 5 to 5000 μm and a tensile elastic modulus of 2 to 150 MPa is placed on the sinter-bonding work, the resulting stack is held between a pair of pressing faces, and, in this state, the sinter-bonding work between the pressing faces undergoes a heating process while being pressurized in its lamination direction, to form a sintered layer from each sinter-bonding material layer.