To provide a sheet for sintering bonding and a sheet for sintering bonding with a base material that are suited for being made with a good operational efficiency and that are also suited for realizing a satisfactory operational efficiency in a sintering process in a process of producing a semiconductor device that goes through sintering bonding of semiconductor chips. A sheet for sintering bonding 10 of the present invention comprises an electrically conductive metal containing sinterable particle and a binder component, and has a shear strength at 23 C. of 2 to 40 MPa measured in accordance with a SAICAS method. A sheet body X, which is a sheet for sintering bonding with a base material according to the present invention, has a laminated structure comprising a base material B and the sheet for sintering bonding 10.

To provide a sheet for sintering bonding and a sheet for sintering bonding with a base material that are suited for being made with a good operational efficiency and that are also suited for realizing a satisfactory operational efficiency in a sintering process in a process of producing a semiconductor device that goes through sintering bonding of semiconductor chips. A sheet for sintering bonding 10 of the present invention comprises an electrically conductive metal containing sinterable particle and a binder component, and has a shear strength at 23 C. of 2 to 40 MPa measured in accordance with a SAICAS method. A sheet body X, which is a sheet for sintering bonding with a base material according to the present invention, has a laminated structure comprising a base material B and the sheet for sintering bonding 10.

To provide a sheet for sintering bonding and the same with a base material suited for lamination and integration and also suited for realizing satisfactory operational efficiency in a sintering process in a process of producing semiconductor devices that go through sintering bonding of semiconductor chips. A sheet for sintering bonding 10 of the present invention comprises an electrically conductive metal containing sinterable particle and a binder component. In this sheet, the minimum load, reached during an unloading process in load-displacement measurement according to a nanoindentation method, is 100 to 30 N. Alternatively, the ratio of the minimum load to a maximum load, reached during a load applying process in the above measurement, is 0.2 to 0.06. A sheet body X, a sheet for sintering bonding with a base material of the present invention, has a laminated structure comprising a base material B and the sheet 10.

To provide a sheet for sintering bonding and the same with a base material suited for lamination and integration and also suited for realizing satisfactory operational efficiency in a sintering process in a process of producing semiconductor devices that go through sintering bonding of semiconductor chips. A sheet for sintering bonding 10 of the present invention comprises an electrically conductive metal containing sinterable particle and a binder component. In this sheet, the minimum load, reached during an unloading process in load-displacement measurement according to a nanoindentation method, is 100 to 30 N. Alternatively, the ratio of the minimum load to a maximum load, reached during a load applying process in the above measurement, is 0.2 to 0.06. A sheet body X, a sheet for sintering bonding with a base material of the present invention, has a laminated structure comprising a base material B and the sheet 10.

To provide a sheet for sintering bonding and a sheet for sintering bonding with a base material that are suited for properly supplying a material for sintering bonding to a face planned to be bonded of a bonding object. A sheet for sintering bonding 10 according to the present invention comprises an electrically conductive metal containing sinterable particle and a binder component. In the sheet for sintering bonding 10, the shear strength at 23 C., F (MPa), measured in accordance with a SAICAS method and the minimum load, f (N), which is reached during an unloading process in load-displacement measurement in accordance with a nanoindentation method, satisfy 0.1F/f1. A sheet body X, which is a sheet for sintering bonding with a base material according to the present invention, has a laminated structure comprising a base material B and the sheet for sintering bonding 10.

To provide a sheet for sintering bonding and a sheet for sintering bonding with a base material that are suited for properly supplying a material for sintering bonding to a face planned to be bonded of a bonding object. A sheet for sintering bonding 10 according to the present invention comprises an electrically conductive metal containing sinterable particle and a binder component. In the sheet for sintering bonding 10, the shear strength at 23 C., F (MPa), measured in accordance with a SAICAS method and the minimum load, f (N), which is reached during an unloading process in load-displacement measurement in accordance with a nanoindentation method, satisfy 0.1F/f1. A sheet body X, which is a sheet for sintering bonding with a base material according to the present invention, has a laminated structure comprising a base material B and the sheet for sintering bonding 10.

A sheet for sintering bonding 10 of the present invention comprises an electrically conductive metal containing sinterable particle and a binder component, and upon subjecting the sheet to a pressurization treatment onto a silver plane of a 5 mm square Si chip under predetermined conditions, the ratio of the area of a layer of a material for sintering bonding transferred onto the silver plane to the silver plane area is 0.75 to 1. A sheet body X of the present invention has a laminated structure comprising a base material B and the sheet 10. A semiconductor chip with a layer of a material for sintering bonding of the present invention comprises a semiconductor chip and a material layer derived from the sheet 10 on one face of the chip, and the ratio of the area of the material layer to the area of that face is 0.75 to 1.

A sheet for sintering bonding 10 of the present invention comprises an electrically conductive metal containing sinterable particle and a binder component, and upon subjecting the sheet to a pressurization treatment onto a silver plane of a 5 mm square Si chip under predetermined conditions, the ratio of the area of a layer of a material for sintering bonding transferred onto the silver plane to the silver plane area is 0.75 to 1. A sheet body X of the present invention has a laminated structure comprising a base material B and the sheet 10. A semiconductor chip with a layer of a material for sintering bonding of the present invention comprises a semiconductor chip and a material layer derived from the sheet 10 on one face of the chip, and the ratio of the area of the material layer to the area of that face is 0.75 to 1.

One aspect of this disclosure is a power amplifier module that includes a power amplifier on a substrate and a semiconductor resistor on the substrate. The power amplifier includes a bipolar transistor having a collector, a base, and an emitter. The collector has a doping concentration of at least 310.sup.16 cm.sup.3 at an interface with the base. The collector also has at least a first grading in which doping concentration increases away from the base. The semiconductor resistor includes a resistive layer that that includes the same material as a layer of the bipolar transistor. Other embodiments of the module are provided along with related methods and components thereof.

One aspect of this disclosure is a power amplifier module that includes a power amplifier on a substrate and a semiconductor resistor on the substrate. The power amplifier includes a bipolar transistor having a collector, a base, and an emitter. The collector has a doping concentration of at least 310.sup.16 cm.sup.3 at an interface with the base. The collector also has at least a first grading in which doping concentration increases away from the base. The semiconductor resistor includes a resistive layer that that includes the same material as a layer of the bipolar transistor. Other embodiments of the module are provided along with related methods and components thereof.