A method of fabricating a package structure including at least the following steps is provided. A carrier is provided. A first package is formed on the carrier. The first package is formed by at least the following steps. A first redistribution layer is formed on the carrier, wherein the first redistribution layer has a first surface and a second surface opposite to the first surface. A semiconductor die is bonded on the first surface of the first redistribution layer. The semiconductor die is electrically connected to the first redistribution layer through a plurality of conductive wires. An insulating material is formed to encapsulate the semiconductor die and the plurality of conductive wires. A thinning process is performed to obtain an insulating encapsulant by reducing a thickness of the insulating material until a portion of each of the conductive wires is removed to form a plurality of conductive wire segments, wherein the semiconductor die is electrically insulated from the first redistribution layer after the thinning process. A second redistribution layer is formed on a top surface of the insulating encapsulant, and over the semiconductor die. The second redistribution layer is electrically connected to the first redistribution layer and to the semiconductor die by the plurality of conductive wire segments.

Chip packages with improved tamper resistance and methods of using such chip packages to provide improved tamper resistance. A lead frame includes a die attach paddle, a plurality of outer lead fingers, and a plurality of inner lead fingers located between the outer lead fingers and the die attach paddle. A chip is attached to the die attach paddle. The chip includes a surface having an outer boundary and a plurality of bond pads arranged proximate to the outer boundary. A first plurality of wires extend from the outer lead fingers to respective locations on the surface of the chip that are interior of the outer boundary relative to the bond pads. A tamper detection circuit is coupled with the first plurality of wires. A second plurality of wires extend from the inner lead fingers to the bond pads on the chip. The second plurality of wires are located between the lead frame and the first plurality of wires.

A semiconductor device capable of suppressing propagation of a crack caused by a temperature cycle at a bonding part between a bonding pad and a bonding wire is provided. A semiconductor device according to an embodiment includes a semiconductor chip having bonding pads and bonding wires. The bonding pad includes a barrier layer and a bonding layer formed on the barrier layer and formed of a material containing aluminum. The bonding wire is bonded to the bonding pad and formed of a material containing copper. An intermetallic compound layer formed of an intermetallic compound containing copper and aluminum is formed so as to reach the barrier layer from the bonding wire in at least a part of the bonding part between the bonding pad and the bonding wire.

Disclosed is a temporary protective film for semiconductor sealing molding 10 including a support film 1; and an adhesive layer 2 provided on the support film 1 and containing an acrylic rubber. A solid shear modulus at 200 C. of the temporary protective film for semiconductor sealing molding 10 may be 5.0 MPa or higher.

A heat dissipating assembly including a layered stack of materials with a highly thermally conductive path for cooling a circuit, the stack including a structurally isolated material having a high coefficient of thermal expansion connected between materials having low coefficients of thermal expansion.

A bonding wire for connecting a first pad to a second pad is provided. The bonding wire includes a ball part bonded to the first pad, a neck part formed on the ball part, and a wire part extending from the neck part to the second pad. Less than an entire portion of a top surface of the neck part is covered by the wire part, and the wire part is in contact with the neck part, the ball part, and the first pad.

A bonding wire for connecting a first pad to a second pad is provided. The bonding wire includes a ball part bonded to the first pad, a neck part formed on the ball part, and a wire part extending from the neck part to the second pad. Less than an entire portion of a top surface of the neck part is covered by the wire part, and the wire part is in contact with the neck part, the ball part, and the first pad.

A semiconductor device is disclosed including a wire bonded die stack where the bond wires skip dies in the die stack to provide bond wires having a long length. In one example, the semiconductor dies are stacked on top of each other with offsets along two orthogonal axes so that the dies include odd numbered dies interspersed and staggered with respect to even numbered dies only one of the axes. Wire bonds may be formed between the odd numbered dies, skipping the even numbered dies, and wire bonds may be formed between the even numbered dies, skipping the odd numbered dies. The long length of the bond wires increases an inductance of the wire bonds relative to parasitic capacitance of the semiconductor dies, thereby increasing signal path bandwidth of the semiconductor device.

A package structure including first and second packages is provided. The first package includes a semiconductor die, an insulating encapsulant, a first redistribution layer, a second redistribution layer, and a plurality of conductive wire segments. The semiconductor die has an active surface and a back surface. The insulating encapsulant encapsulates the semiconductor die. The first redistribution layer is disposed on the back surface of the semiconductor die and a bottom surface of the insulating encapsulant. The first redistribution layer has a first surface and a second surface opposite to the first surface. The second redistribution layer is disposed on the active surface of the semiconductor die. The plurality of conductive wire segments electrically connects the semiconductor die to the second redistribution layer and the first redistribution layer to the second redistribution layer. The second package is stacked on the second surface of the first redistribution layer over the first package.

A package structure including first and second packages is provided. The first package includes a semiconductor die, an insulating encapsulant, a first redistribution layer, a second redistribution layer, and a plurality of conductive wire segments. The semiconductor die has an active surface and a back surface. The insulating encapsulant encapsulates the semiconductor die. The first redistribution layer is disposed on the back surface of the semiconductor die and a bottom surface of the insulating encapsulant. The first redistribution layer has a first surface and a second surface opposite to the first surface. The second redistribution layer is disposed on the active surface of the semiconductor die. The plurality of conductive wire segments electrically connects the semiconductor die to the second redistribution layer and the first redistribution layer to the second redistribution layer. The second package is stacked on the second surface of the first redistribution layer over the first package.