A package structure including first and second packages is provided. The first package includes a semiconductor die, an insulating encapsulant, a first redistribution layer, a second redistribution layer, and a plurality of conductive wire segments. The semiconductor die has an active surface and a back surface. The insulating encapsulant encapsulates the semiconductor die. The first redistribution layer is disposed on the back surface of the semiconductor die and a bottom surface of the insulating encapsulant. The first redistribution layer has a first surface and a second surface opposite to the first surface. The second redistribution layer is disposed on the active surface of the semiconductor die. The plurality of conductive wire segments electrically connects the semiconductor die to the second redistribution layer and the first redistribution layer to the second redistribution layer. The second package is stacked on the second surface of the first redistribution layer over the first package.

A micro-coaxial wire has an overall diameter in a range of 0.1 m-550 m, a conductive core of the wire has a cross-sectional diameter in a range of 0.05 m-304 m, an insulator is disposed on the conductive core with thickness in a range of 0.005 m-180 m, and a conductive shield layer is disposed on the insulator with thickness in a range of 0.009 m-99 m.

An integrated circuit and method of making an integrated circuit is provided. The integrated circuit includes an electrically conductive pad having a generally planar top surface that includes a cavity having a bottom surface and sidewalls extending from the bottom surface of the cavity to the top surface of the pad. An electronic device is attached to the top surface of the electrically conductive pad. A wire bond is attached from the electronic device to the bottom surface of the cavity. A molding compound encapsulates the electronic device.

A packaged semiconductor device includes a first bond pad, a second bond pad, a first bond wire that includes a first end bonded to the first bond pad and a second end bonded to the second bond pad, and a second bond wire that includes a first end that is electrically connected to the first bond pad and a second end that is electrically connected to the second bond pad. The first end of the second bond wire is bonded to the first end of the first bond wire. A method of bonding a bond wire includes bonding a first end of a first bond wire to a contact surface of a first bond pad and bonding a first end of a second bond wire to a surface of the first end of the first bond wire.

A semiconductor device includes an integrated circuit die having bond pads and a bond wires. The bond wires are connected to respective ones of the bond pads by a ball bond. An area of contact between the ball bond and the bond pad has a predetermined shape that is non-circular and includes at least one axis of symmetry. A ratio of the ball bond length to the ball bond width may be equal to a ratio of the bond pad length to the bond pad width.

A semiconductor package includes a metallic pad and leads spaced from the metallic pad by a gap, the metallic pad including a roughened surface. The semiconductor package further includes a semiconductor die including bond pads, and an adhesive between the roughened surface of the metallic pad and the semiconductor die, therein bonding the semiconductor die to the metallic pad, wherein the adhesive includes a resin. The metallic pad further includes a groove surrounding the semiconductor die on the roughened surface, the groove having a surface roughness less than a surface roughness of the roughened surface of the metallic pad.

One aspect relates to a method that includes bonding an electrically conductive element to a bonding surface of a bonding partner by increasing a temperature of a bonding section of the electrically conductive element from an initial temperature to an increased temperature by passing an electric heating current through the bonding section, and pressing the bonding section with a pressing force against the bonding surface using a sonotrode and introducing an ultrasonic vibration into the bonding section via the sonotrode such that the increased temperature of the bonding section, the ultrasonic signal in the bonding section and the pressing force are simultaneously present and cause the formation of a tight and direct bond between the bonding section and the bonding surface.

A method of improving electrical interconnections between two electrical elements is made available by providing a meta-material overlay in conjunction with the electrical interconnection. The meta-material overlay is designed to make the electrical signal propagating via the electrical interconnection to act as though the permittivity and permeability of the dielectric medium within which the electrical interconnection is formed are different than the real component permittivity and permeability of the dielectric medium surrounding the electrical interconnection. In some instances the permittivity and permeability resulting from the meta-material cause the signal to propagate as if the permittivity and permeability have negative values. Accordingly the method provides for electrical interconnections possessing enhanced control and stability of impedance, reduced noise, and reduced loss. Alternative embodiments of the meta-material overlay provide, the enhancements for conventional discrete wire bonds while also facilitating single integrated designs compatible with tape implementation.

A method of improving electrical interconnections between two electrical elements is made available by providing a meta-material overlay in conjunction with the electrical interconnection. The meta-material overlay is designed to make the electrical signal propagating via the electrical interconnection to act as though the permittivity and permeability of the dielectric medium within which the electrical interconnection is formed are different than the real component permittivity and permeability of the dielectric medium surrounding the electrical interconnection. In some instances the permittivity and permeability resulting from the meta-material cause the signal to propagate as if the permittivity and permeability have negative values. Accordingly the method provides for electrical interconnections possessing enhanced control and stability of impedance, reduced noise, and reduced loss. Alternative embodiments of the meta-material overlay provide, the enhancements for conventional discrete wire bonds while also facilitating single integrated designs compatible with tape implementation.

There is provided a bonding wire for a semiconductor device including a coating layer having Pd as a main component on a surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on a surface of the coating layer, the bonding wire further improving 2nd bondability on a Pd-plated lead frame and achieving excellent ball bondability even in a high-humidity heating condition. The bonding wire for a semiconductor device including the coating layer having Pd as a main component on the surface of the Cu alloy core material and the skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing either or both of Pd and Pt in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in the 2nd bondability and excellent ball bondability in the high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %.