A 3D semiconductor device including: a first single crystal layer with first transistors; overlaid by a first metal layer; a second metal layer overlaying the first metal layer and being overlaid by a third metal layer; a logic gates including at least the first metal layer interconnecting the first transistors; second transistors disposed atop the third metal layer; third transistors disposed atop the second transistors; a top metal layer disposed atop the third transistors; and a memory array including word-lines, and at least four memory mini arrays, where each of the memory mini arrays includes at least four rows by four columns of memory cells, where each of the memory cells includes at least one of the second transistors or third transistors, sense amplifier circuit(s) for each of the memory mini arrays, the second metal layer provides a greater current carrying capacity than the third metal layer.

A method for forming a chip package structure is provided. The method includes forming a dielectric layer over a redistribution structure. The redistribution structure includes a dielectric structure and a plurality of wiring layers in or over the dielectric structure. The method includes forming a first conductive bump structure and a shield bump structure over the dielectric layer. The first conductive bump structure is electrically connected to the wiring layers, and the shield bump structure is electrically insulated from the wiring layers. The method includes bonding a first chip structure to the redistribution structure through the first conductive bump structure. The first chip structure is electrically insulated from the shield bump structure, and the first chip structure extends across a first sidewall of the shield bump structure.

A method for forming a chip package structure is provided. The method includes forming a dielectric layer over a redistribution structure. The redistribution structure includes a dielectric structure and a plurality of wiring layers in or over the dielectric structure. The method includes forming a first conductive bump structure and a shield bump structure over the dielectric layer. The first conductive bump structure is electrically connected to the wiring layers, and the shield bump structure is electrically insulated from the wiring layers. The method includes bonding a first chip structure to the redistribution structure through the first conductive bump structure. The first chip structure is electrically insulated from the shield bump structure, and the first chip structure extends across a first sidewall of the shield bump structure.

Metal-free frame designs for silicon bridges for semiconductor packages and the resulting silicon bridges and semiconductor packages are described. In an example, a semiconductor structure includes a substrate having an insulating layer disposed thereon, the substrate having a perimeter. A metallization structure is disposed on the insulating layer, the metallization structure including conductive routing disposed in a dielectric material stack. A first metal guard ring is disposed in the dielectric material stack and surrounds the conductive routing. A second metal guard ring is disposed in the dielectric material stack and surrounds the first metal guard ring. A metal-free region of the dielectric material stack surrounds the second metal guard ring. The metal-free region is disposed adjacent to the second metal guard ring and adjacent to the perimeter of the substrate.

Multiple component package structures are described in which an interposer chiplet is integrated to provide fine routing between components. In an embodiment, the interposer chiplet and a plurality of conductive vias are encapsulated in an encapsulation layer. A first plurality of terminals of the first and second components may be in electrical connection with the plurality of conductive pillars and a second plurality of terminals of first and second components may be in electrical connection with the interposer chiplet.

A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a first passivation layer, a first metal layer and a first semiconductor die. The first metal layer is embedded in the first passivation layer. The first metal layer defines a first through-hole. The first semiconductor die is disposed on the first passivation layer.

A method of manufacture for a semiconductor package includes; forming a first wiring structure, connecting a semiconductor chip to the first wiring structure, forming a lower encapsulant on the first wiring structure to cover at least a portion of a lateral surface of the semiconductor chip, wherein the lower encapsulant does not cover an upper surface of the semiconductor chip, forming an upper encapsulant on the lower encapsulant, wherein the upper encapsulant covers the upper surface of the semiconductor chip and the upper encapsulant has a materially different composition than the lower encapsulant, and forming a second wiring structure on the upper encapsulant.

A wiring structure includes an upper conductive structure, a lower conductive structure, an intermediate layer and at least one through via. The upper conductive structure includes at least one upper dielectric layer and at least one upper circuit layer in contact with the upper dielectric layer. The lower conductive structure includes at least one lower dielectric layer and at least one lower circuit layer in contact with the lower dielectric layer. The intermediate layer is disposed between the upper conductive structure and the lower conductive structure and bonds the upper conductive structure and the lower conductive structure together. The through via extends through the upper conductive structure, the intermediate layer and the lower conductive structure.

Methods of manufacturing a semiconductor package structure are provided. A method includes: bonding dies and dummy dies to a wafer; forming a dielectric material layer on the wafer to cover the dies and the dummy dies; performing a first planarization process to remove a first portion of the dielectric material layer over top surfaces of the dies and the dummy dies; and performing a second planarization process to remove portions of the dies, portions of the dummy dies and a second portion of the dielectric material layer, and a dielectric layer is formed laterally aside the dies and the dummy dies; wherein after the second planarization process is performed, a total thickness variation of the dies is less than a total thickness variation of the dummy dies.

The disclosure provides an electronic device and a manufacturing method thereof. The electronic device includes a substrate, an electronic element, an underfill layer, and a protective structure. The electronic element is disposed on the substrate. At least a portion of the underfill layer is disposed between the substrate and the electronic element. A thickness of the underfill layer is not greater than a height from a surface of the substrate to an upper surface of the electronic element. The protective structure is disposed on the substrate and adjacent to the underfill layer. The electronic device and the manufacturing method thereof of the disclosure may effectively control an area of the underfill layer.