Disclosed are semiconductor packages and methods of fabricating the same. The semiconductor package includes a redistribution substrate that includes a chip region and an edge region around the chip region, and a semiconductor chip on the chip region of the redistribution substrate. The redistribution substrate includes a plurality of dielectric layers that are vertically stacked, a plurality of redistribution patterns on the chip region and in each of the dielectric layers, and a redistribution test pattern on the edge region and at a level the same as a level of at least one of the redistribution patterns.

Wafer processing techniques, or methods for forming semiconductor rides, are disclosed for fabricating plated pillar dies having die-level electromagnetic interference (EMI) shield layers. In embodiments, the method includes depositing a metallic seed layer over a semiconductor wafer and contacting die pads thereon. An electroplating process is then performed to compile plated pillars on the metallic seed layer and across the semiconductor wafer. Following electroplating, selected regions of the metallic seed layer are removed to produce electrical isolation gaps around a first pillar type, while leaving intact portions of the metallic seed layer to yield a wafer-level EMI shield layer. The semiconductor wafer is separated into singulated plated pillar dies, each including a die-level EMI shield layer and plated pillars of the first pillar type electrically isolated from the EMI shield layer.

A semiconductor package includes a semiconductor chip; and a redistribution substrate connected to the semiconductor chip, the redistribution structure including a conductive structure including a lower conductive pattern and a redistribution structure on the lower conductive pattern and electrically connected to the lower conductive pattern, an insulating structure covering at least a side surface of the lower conductive pattern or a side surface of the redistribution structure, and a protective layer between the insulating structure and at least one of the lower conductive pattern or the redistribution structure. The protective layer including a first protective layer in contact with at least one of a side surface of the lower conductive pattern or a side surface of the redistribution structure, and a second protective layer in contact with at least a portion of a side surface of the first protective layer.

Semiconductor packages and package assemblies having active dies and external die mounts on a silicon wafer, and methods of fabricating such semiconductor packages and package assemblies, are described. In an example, a semiconductor package assembly includes a semiconductor package having an active die attached to a silicon wafer by a first solder bump. A second solder bump is on the silicon wafer laterally outward from the active die to provide a mount for an external die. An epoxy layer may surround the active die and cover the silicon wafer. A hole may extend through the epoxy layer above the second solder bump to expose the second solder bump through the hole. Accordingly, an external memory die can be connected directly to the second solder bump on the silicon wafer through the hole.

An endoscope includes an image pickup module, and the image pickup module includes: an image pickup device an external electrode being disposed on a back surface of the image pickup device; a wiring element provided with a through-hole passing through a first main surface and a second main surface, a first electrode on the first main surface being bonded with the external electrode; a signal cable bonded with a second electrode on the second main surface of the wiring element; and a first resin that seals a first bump bonding the first electrode and the external electrode and a second bump bonding the second electrode and the signal cable, and fills the through-hole.

A chip package includes an interposer comprising a silicon substrate, multiple metal vias passing through the silicon substrate, a first interconnection metal layer over the silicon substrate, a second interconnection metal layer over the silicon substrate, and an insulating dielectric layer over the silicon substrate and between the first and second interconnection metal layers; a field-programmable-gate-array (FPGA) integrated-circuit (IC) chip over the interposer; multiple first metal bumps between the interposer and the FPGA IC chip; a first underfill between the interposer and the FPGA IC chip, wherein the first underfill encloses the first metal bumps; a non-volatile memory (NVM) IC chip over the interposer; multiple second metal bumps between the interposer and the NVM IC chip; and a second underfill between the interposer and the NVM IC chip, wherein the second underfill encloses the second metal bumps.

A method for forming a chip package structure is provided. The method includes forming a first conductive bump and a first ring-like structure over a chip. The first ring-like structure surrounds the first conductive bump, the first ring-like structure and the first conductive bump are made of a same first material, the chip includes an interconnect structure, and the first ring-like structure is electrically insulated from the interconnect structure and the first conductive bump. The method includes bonding the chip to a substrate through the first conductive bump.

A method for forming a chip package structure is provided. The method includes forming a first conductive bump and a first ring-like structure over a chip. The first ring-like structure surrounds the first conductive bump, the first ring-like structure and the first conductive bump are made of a same first material, the chip includes an interconnect structure, and the first ring-like structure is electrically insulated from the interconnect structure and the first conductive bump. The method includes bonding the chip to a substrate through the first conductive bump.

A semiconductor package includes a redistribution substrate including a first redistribution layer, a first molding member on the redistribution substrate, a second redistribution layer on an upper surface of the first molding member and having a redistribution pad, an electrical connection pad on an upper surface of a second molding member and electrically connected to the second redistribution layer, and a passivation layer on the second molding member and having an opening exposing at least a portion of the electrical connection pad. The electrical connection pad includes a conductor layer, including a first metal, and a contact layer on the conductor layer and including a second metal. The redistribution pad includes a third metal, different from the first metal and the second metal. The portion of the electrical connection pad, exposed by the opening, has a width greater than a width of the redistribution pad.

A semiconductor package includes a first interposer, a second interposer, a first die, a second die and at least one bridge structure. The first interposer and the second interposer are embedded by a first dielectric encapsulation. The first die is disposed over and electrically connected to the first interposer. The second die is disposed over and electrically connected to the second interposer. The at least one bridge structure is disposed between the first die and the second die.