Provided are a device packing facility and method using DEHT and a device processing apparatus utilizing the DEHT. The device packaging facility includes a mounting unit providing bis(2-ethylhexyl) terephthalate (DEHT) between first and second devices to attach the first and second devices to each other, a processing unit thermally processing the first and second devices that are attached to each other to remove the DEHT and fix the first and second devices to each other, and a transfer unit transferring the first and second devices that are attached to each other from the mounting unit to the processing unit.

A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a first redistribution structure, a second redistribution structure, a first semiconductor die, a second semiconductor die and an encapsulant. The second redistribution structure is vertically overlapped with the first redistribution structure. The first and second semiconductor dies are located between the first and second redistribution structures, and respectively have an active side and a back side opposite to the active side, as well as a conductive pillar at the active side. The back side of the first semiconductor die is attached to the back side of the second semiconductor die. The conductive pillar of the first semiconductor die is attached to the first redistribution structure, whereas the conductive pillar of the second semiconductor die extends to the second redistribution structure.

A semiconductor device package includes a first electronic component, a plurality of first conductive traces, a second electronic component, a plurality of second conductive traces and a plurality of first conductive structures. The first electronic component has a first active surface. The first conductive traces are disposed on and electrically connected to the first active surface. The second electronic component is stacked on the first electronic component. The second electronic component has an inactive surface facing the first active surface, a second active surface opposite the inactive surface, and at least one lateral surface connecting the second active surface and the inactive surface. The second conductive traces are electrically connected to the second active surface, and extending from the second active surface to the lateral surface. The first conductive structures are electrically connecting the second conductive traces to the first conductive traces, respectively.

A semiconductor package structure and a method of manufacturing the semiconductor package structure are disclosed. The semiconductor package structure includes a first semiconductor device having an active surface, a redistribution structure in electrical connection with the first semiconductor device, and a second semiconductor device bonded to the active surface of the first semiconductor device, and disposed between the first semiconductor device and the redistribution structure.

A semiconductor package structure and a method of manufacturing the semiconductor package structure are disclosed. The semiconductor package structure includes a first semiconductor device having an active surface, a redistribution structure in electrical connection with the first semiconductor device, and a second semiconductor device bonded to the active surface of the first semiconductor device, and disposed between the first semiconductor device and the redistribution structure.

Package structure with folded die arrangements and methods of fabrication are described. In an embodiment, a package structure includes a first die and vertical interposer side-by-side. A second die is face down on an electrically connected with the vertical interposer, and a local interposer electrically connects the first die with the vertical interposer.

The disclosure is provided with: a temporary crimping step in which one or more semiconductor chips 10 are sequentially laminated while being temporarily crimped in each of two or more locations on a substrate 30 to thereby form chip stacks ST in a temporarily crimped state; and a permanent crimping step in which the top surfaces of all of the chip stacks ST formed in the temporarily crimped state are sequentially heated, pressurized, and permanently crimped. Furthermore, a specifying step is provided prior to the temporary crimping step for specifying a separation distance Dd which is the distance from the chip stacks ST under permanent crimping to a location at which the temperature of the substrate 30, the temperature having been raised by heating for the permanent crimping, becomes less than or equal to a prescribed permissible temperature Td, and in the temporary crimping step, the chip stacks ST in the temporarily crimped state are formed separated from each other by the separation distance Dd or more.

A light-emitting diode (LED) chip includes a semiconductor epitaxial structure, an insulating substrate, a first metal layer, and a second metal layer. The semiconductor epitaxial structure includes a first semiconductor epitaxial layer, a second semiconductor epitaxial layer, and a light-emitting layer interposed between the first semiconductor epitaxial layer and the second semiconductor epitaxial layer. The insulating substrate has two opposite surfaces, and the first and second metal layers are respectively disposed on the two surfaces of the insulating substrate. An LED device and an LED lamp including the LED chip are also disclosed.

Package structure with folded die arrangements and methods of fabrication are described. In an embodiment, a package structure includes a first die and vertical interposer side-by-side. A second die is face down on an electrically connected with the vertical interposer, and a local interposer electrically connects the first die with the vertical interposer.

Package structure with folded die arrangements and methods of fabrication are described. In an embodiment, a package structure includes a first die and vertical interposer side-by-side. A second die is face down on an electrically connected with the vertical interposer, and a local interposer electrically connects the first die with the vertical interposer.