The present publication discloses a circuit-board structure, including a conductor layer on an insulating material layer, and a conductor pattern on top of the conductor foil. A component is attached to the conductor foil and the conductor pattern, the component embedded at least in part in adhesive which attaches the component to the insulating material layer. A recess is formed in the conductor foil and the insulating material layer, and contact openings are in the insulating material layer at locations of contact areas of the component. Conductor material of the conductor foil is not present outside the conductor pattern, and the conductor foil is located between the conductor pattern and the insulating material layer.

A wafer-level buffer layer is disclosed. The wafer-level buffer layer is configured to prevent cracking and chipping the back-end-of-line (BEOL) dielectric during wafer singulation process. The wafer-level buffer layer is a composite wafer-level buffer layer with a vibration damping agent. The vibration damping agent includes a polymer-based base layer with fillers. The damping agent absorbs or dampens the vibration of the saw blade during dicing to prevent cracking and chipping of the BEOL dielectric.

A method includes: arranging a semiconductor device on a redistribution substrate, the device having a first power electrode and a control electrode on a first surface and a second power electrode on a second surface, the redistribution substrate having an insulating board having a first major surface and a second major surface having solderable contact pads, so that the first power electrode is arranged on a first conductive pad and the control electrode is arranged on a second conductive pad on the first major surface; arranging a contact clip such that a web portion is arranged on the second power electrode and a peripheral rim portion is arranged on a third conductive pad on the first major surface; and electrically coupling the first power electrode, control electrode and peripheral rim portion to the respective conductive pads and electrically coupling the web portion to the second power electrode.

A method for making a semiconductor device includes forming rims on first and second dice. The rims extend laterally away from the first and second dice. The second die is stacked over the first die, and one or more vias are drilled through the rims after stacking. The semiconductor device includes redistribution layers extending over at least one of the respective first and second dice and the corresponding rims. The one or more vias extend through the corresponding rims, and the one or more vias are in communication with the first and second dice through the rims.

A display device includes a substrate including a display area having a plurality of pixel areas and a non-display area located at at least one side of the display area; a pixel in each of the pixel areas; and a plurality of fan-out lines in the non-display area to form a first conductive layer. The pixel includes a pixel circuit layer including at least one transistor and a first bridge line and a second bridge line; and a display element layer on the pixel circuit layer. Each of the first and second bridge lines is electrically connected to a corresponding fan-out line from among the fan-out lines.

An assembly structure and a method for manufacturing an assembly structure are provided. The assembly structure includes a wiring structure and a semiconductor element. The wiring structure includes at least one dielectric layer and at least one circuit layer in contact with the at least one dielectric layer, and defines an accommodating recess recessed from a top surface of the wiring structure. The wiring structure has a smooth surface extending from the top surface of the wiring structure to a surface of the accommodating recess. The semiconductor element is disposed in the accommodating recess.

A method includes forming a release film over a carrier, forming a polymer buffer layer over the release film, forming a metal post on the polymer buffer layer, encapsulating the metal post in an encapsulating material, performing a planarization on the encapsulating material to expose the metal post, forming a redistribution structure over the encapsulating material and the metal post, and decomposing a first portion of the release film. A second portion of the release film remains after the decomposing. An opening is formed in the polymer buffer layer to expose the metal post.

A power overlay (POL) module includes a semiconductor device having a first side and an opposing second side, a dielectric sheet having a first side coupled to the semiconductor device second side, and an opposing second side, the dielectric sheet defining an aperture therethrough. The POL module also includes a first conductive layer disposed on the second side of the dielectric sheet and electrically coupled through the aperture to the semiconductor device second surface, a first conductive plate having a first side, and an opposing second side coupled to the first surface of the semiconductor device. The POL module further includes a first heat sink coupled the first side of the conductive plate and a first thermal interface layer disposed between the first conductive plate and the first heat sink.

A semiconductor package including a chip stack structure, a redistribution layer (RDL) structure and conductive plugs is provided. The chip stack structure includes stacked chips. Each of the chips includes a pad. The pads on the chips are located on the same side of the chip stack structure. The RDL structure is disposed on the first sidewall of the chip stack structure and adjacent to the pads. The conductive plugs penetrate through the RDL structure. The conductive plug is connected to the corresponding pad.

A method includes thinning a semiconductor substrate of a device die to reveal through-substrate vias that extend into the semiconductor substrate, and forming a first redistribution structure, which includes forming a first plurality of dielectric layers over the semiconductor substrate, and forming a first plurality of redistribution lines in the first plurality of dielectric layers. The first plurality of redistribution lines are electrically connected to the through-substrate vias. The method further includes placing a first memory die over the first redistribution structure, and forming a first plurality of metal posts over the first redistribution structure. The first plurality of metal posts are electrically connected to the first plurality of redistribution lines. The first memory die is encapsulated in a first encapsulant. A second plurality of redistribution lines are formed over, and electrically connected to, the first plurality of metal posts and the first memory die.