The present disclosure discloses a method of packaging a chip and a chip package structure. The method of packaging the chip includes: forming a protective layer on a front surface of a chip to be packaged; mounting the chip to be packaged formed with the protective layer on the front surface on a first carrier, the back surface of the chip to be packaged facing upwards and a front surface thereof facing towards the first carrier; forming a first encapsulation layer, the first encapsulation layer being formed on the back surface of the chip to be packaged and the exposed first carrier; and detaching the first carrier to exposed the protective layer. In the present disclosure, when the chip to be packaged is mounted on the carrier after the protective layer is formed on the front surface thereof, and then the first encapsulation layer is formed on the chip to be packaged, the encapsulation material can be prevented from permeating to the gap between the chip to be packaged and the carrier and thereby damaging the circuit structure and/or the bonding pad on the chip to be packaged.

A component carrier including a stack of at least one electrically conductive layer structure and at least one electrically insulating layer structure, a component embedded in the stack, and a sealing structure sealing at least part of the component with regard to material of the stack, wherein the sealing structure is configured for reducing stress between the component and the stack.

Implementations of a semiconductor package may include two or more die, each of the two more die coupled to a metal layer at a drain of each of the two more die, the two or more die and each metal layer arranged in two parallel planes; a first interconnect layer coupled at a source of each of the two more die; a second interconnect layer coupled to a gate of each of the two or more die and to a gate package contact through one or more vias; and an encapsulant that encapsulates the two or more die and at least a portion of the first interconnect layer, each metal layer, and the second interconnect layer.

A semiconductor package and a method of manufacturing the same are provided. The semiconductor package includes a semiconductor die, a cap layer, a conductive terminal, and a dam structure. The semiconductor die has a first surface. The cap layer is over the semiconductor die and has a second surface facing the first surface of the semiconductor die. The conductive terminal penetrates the cap layer and electrically connects to the semiconductor die. The dam structure is between the semiconductor die and the cap layer and surrounds a portion of the conductive terminal between the first surface and the second surface, thereby forming a gap between the cap layer and the semiconductor die.

The present disclosure discloses a method of packaging a chip and a chip package structure. The method of packaging the chip includes: forming a protective layer on a front surface of a chip to be packaged; mounting the chip to be packaged formed with the protective layer on the front surface on a first carrier, the back surface of the chip to be packaged facing upwards and a front surface thereof facing towards the first carrier; forming a first encapsulation layer, the first encapsulation layer being formed on the back surface of the chip to be packaged and the exposed first carrier; and detaching the first carrier to exposed the protective layer. In the present disclosure, when the chip to be packaged is mounted on the carrier after the protective layer is formed on the front surface thereof, and then the first encapsulation layer is formed on the chip to be packaged, the encapsulation material can be prevented from permeating to the gap between the chip to be packaged and the carrier and thereby damaging the circuit structure and/or the bonding pad on the chip to be packaged.

A component carrier has a base structure with a recess, a thermally highly conductive coating covering at least a part of a surface of the base structure, and a component in the recess.

A light-emitting apparatus includes a substrate, pads disposed on the substrate, a sacrificial pattern layer and a light-emitting diode element disposed on the sacrificial pattern layer. The light-emitting diode element includes a first type semiconductor layer, a second type semiconductor layer, an active layer, and electrodes. A connection patterns disposed on at least one of the electrodes and the pads. Materials of the connection patterns include hot fluidity conductive materials. The connection patterns cover an outermost sidewall of the sacrificial pattern layer and are electrically connected to the at least one of the electrodes and the pads. The sacrificial pattern layer is located between the connection patterns, and the sacrificial pattern layer is overlapped with the pads in a normal direction of the substrate.

In an embodiment, a device includes: a bottom integrated circuit die having a first front side and a first back side; a top integrated circuit die having a second front side and a second back side, the second back side being bonded to the first front side, the top integrated circuit die being free from through substrate vias (TSVs); a dielectric layer surrounding the top integrated circuit die, the dielectric layer being disposed on the first front side, the dielectric layer and the bottom integrated circuit die being laterally coterminous; and a through via extending through the dielectric layer, the through via being electrically coupled to the bottom integrated circuit die, surfaces of the through via, the dielectric layer, and the top integrated circuit die being planar.

A light-emitting apparatus includes a substrate, pads disposed on the substrate, a sacrificial pattern layer and a light-emitting diode element disposed on the sacrificial pattern layer. The light-emitting diode element includes a first type semiconductor layer, a second type semiconductor layer, an active layer, and electrodes. A connection patterns disposed on at least one of the electrodes and the pads. Materials of the connection patterns include hot fluidity conductive materials. The connection patterns cover a sidewall of the sacrificial pattern layer and are electrically connected to the at least one of the electrodes and the pads. In addition, the manufacturing method of the above light-emitting apparatus is also proposed.

A packaged semiconductor device includes a substrate with first and second opposing major surfaces. A stacked semiconductor device structure is connected to the first major surface and includes a plurality of semiconductor die having terminals. Conductive interconnect structures electrically connect the terminals of the semiconductor dies together. The semiconductor dies are stacked together so that the terminals are exposed, and the stacked semiconductor device structure comprises a stepped profile. The conductive interconnect structures comprise a conformal layer that substantially follows the stepped profile.