A power die package includes a lead frame having a flag with power leads on one lateral side and signal leads on one or more other lateral sides. A power die is attached to a bottom surface of the flag and electrically connected to the power leads with a conductive epoxy. A control die is attached to a top surface of the flag and electrically connected to the signal leads with bond wires. A mold compound is provided that encapsulates the dies, the bond wires, and proximal parts of the leads, while distal ends of the leads are exposed, forming a PQFN package.

A semiconductor device is disclosed including one or more semiconductor dies mounted on substrate. Each semiconductor die may be formed with a ferromagnetic layer on a lower, inactive surface of the semiconductor die. The ferromagnetic layer pulls the semiconductor dies down against each other and the substrate during fabrication to prevent warping of the dies. The ferromagnetic layer also balances out a mismatch of coefficients of thermal expansion between layers of the dies, thus further preventing warping of the dies.

An integrated semiconductor device and a method for manufacturing the integrated semiconductor device are disclosed. In an embodiment an integrated semiconductor device includes a supporting substrate having a first substrate face and a second substrate face opposite to the first substrate face, a semiconductor die having a first die face coupled to the first substrate face of the supporting substrate, the first die face including first die contact pads, wherein the supporting substrate has at least one through opening, wherein the first die contact pads are arranged facing the through opening, and wherein the supporting substrate comprises first substrate contact pads connected by first bonding wires to the respective first die contact pads through the through opening.

An integrated circuit (IC) package includes a first die with a first surface overlaying a substrate. The first die includes a first metal pad at a second surface opposing the first surface. The IC package also includes a dielectric layer having a first surface contacting the second surface of the first die. The IC package further includes a second die with a surface that contacts a second surface of the dielectric layer. The second die includes a second metal pad aligned with the first metal pad of the first die. A plane perpendicular to the second surface of the first die intersects the first metal pad and the second metal pad.

A method of making a secure integrated-circuit system comprises providing a first integrated circuit in a first die having a first die size and providing a second integrated circuit in a second die. The second die size is smaller than the first die size. The second die is transfer printed onto the first die and connected to the first integrated circuit, forming a compound die. The compound die is packaged. The second integrated circuit is operable to monitor the operation of the first integrated circuit and provides a monitor signal responsive to the operation of the first integrated circuit. The first integrated circuit can be constructed in an insecure facility and the second integrated circuit can be constructed in a secure facility.

An electromechanical pressure sensor system, in particular microphone type, including an electromechanical transducer, signal processing device, a substrate for receiving at least one support of the electromechanical transducer and/or signal processing device, a protective cover arranged on the upper face of the substrate, the support of the electromechanical transducer and/or signal processing device being housed in at least one cavity located on the lower face of the substrate is disclosed.

An electromechanical pressure sensor system, in particular microphone type, including an electromechanical transducer, signal processing device, a substrate for receiving at least one support of the electromechanical transducer and/or signal processing device, a protective cover arranged on the upper face of the substrate, the support of the electromechanical transducer and/or signal processing device being housed in at least one cavity located on the lower face of the substrate is disclosed.

A semiconductor package including a package base substrate; at least one semiconductor chip on the package base substrate; a heat sink attached on the at least one semiconductor chip, the heat sink including a base and a plurality of protrusion patterns on a top of the base; and a molding covering a top of the package base substrate, a side surface of the at least one semiconductor chip, and a side surface of the heat sink without covering a top of the heat sink.

Assembly of the semiconductor device includes the following steps: (a) mounting a semiconductor chip on the bottom electrode 40; (b) mounting the top electrode 30 on the semiconductor chip; (c) forming a sealing body 70 made of resin and provided with a convex portion 74 so as to cover the semiconductor chip; and (d) exposing the electrode surface 31 of the top electrode 30 on the top surface of the sealing body 70 and exposing the electrode surface 41 of the bottom electrode 40 on the back surface of the sealing body 70. In the step (d), at least one of the electrode surface 31 and the electrode surface 41 is exposed from the sealing body 70 by irradiating at least one of the front surface and the back surface of the sealing body 70 with the laser 110.

Provided is a stacked semiconductor package, which has various kinds of semiconductor chips with various sizes and is capable of miniaturization. The stacked semiconductor package includes a base substrate layer and a sub semiconductor package disposed on a top surface of the base substrate layer. The sub semiconductor package includes a plurality of sub semiconductor chips spaced apart from one another, and a sub mold layer filling spaces between the plurality of sub semiconductor chips to surround side surfaces of the plurality of sub semiconductor chips. The stacked semiconductor package includes at least one main semiconductor chip stacked on the sub semiconductor package, the at least one main semiconductor chip being electrically connected to the base substrate layer through first electrical connection members.