A device is provided. The device includes a bridge layer over a first substrate. A first connector electrically connecting the bridge layer to the first substrate. A first die is coupled to the bridge layer and the first substrate, and a second die is coupled to the bridge layer.

A device is provided. The device includes a bridge layer over a first substrate. A first connector electrically connecting the bridge layer to the first substrate. A first die is coupled to the bridge layer and the first substrate, and a second die is coupled to the bridge layer.

Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

A method is provided. The method includes attaching a bridge layer to a first substrate. The method also includes forming a first connector, the first connector electrically connecting the bridge layer to the first substrate. The method also includes coupling a first die to the bridge layer and the first substrate, and coupling a second die to the bridge layer.

A method is provided. The method includes attaching a bridge layer to a first substrate. The method also includes forming a first connector, the first connector electrically connecting the bridge layer to the first substrate. The method also includes coupling a first die to the bridge layer and the first substrate, and coupling a second die to the bridge layer.

Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

A semiconductor package including a package base substrate; at least one semiconductor chip on the package base substrate; a heat sink attached on the at least one semiconductor chip, the heat sink including a base and a plurality of protrusion patterns on a top of the base; and a molding covering a top of the package base substrate, a side surface of the at least one semiconductor chip, and a side surface of the heat sink without covering a top of the heat sink.

A semiconductor package including a package base substrate; at least one semiconductor chip on the package base substrate; a heat sink attached on the at least one semiconductor chip, the heat sink including a base and a plurality of protrusion patterns on a top of the base; and a molding covering a top of the package base substrate, a side surface of the at least one semiconductor chip, and a side surface of the heat sink without covering a top of the heat sink.

A semiconductor device includes a first substrate having a first face and a second face, a first semiconductor chip on the first face, a first wire which electrically connects the first semiconductor chip and the first substrate, a first resin which seals the first semiconductor chip and the first wire, a first metal bump on the second face, a second substrate below the first substrate, the second substrate having a third face and a fourth face, a second semiconductor chip on the third face and electrically connected to the first metal bump, a second wire which electrically connects the second semiconductor chip and the second substrate, a second resin between the second face and the third face, the second resin sealing the first metal bump, the second semiconductor chip and the second wire, and a second metal bump on the fourth face.

Quantum computing assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a quantum computing assembly may include a plurality of dies electrically coupled to a package substrate, and lateral interconnects between different dies of the plurality of dies, wherein the lateral interconnects include a superconductor, and at least one of the dies of the plurality of dies includes quantum processing circuitry.