In an embodiment, a package includes a first package structure including a first integrated circuit die having an active side and a back-side, the active side including die connectors, a second integrated circuit die adjacent the first integrated circuit die, the second integrated circuit die having an active side and a back-side, the active side including die connectors, a routing die including die connectors bonded to the active sides of the first integrated circuit die and the second integrated circuit die, the routing die electrically coupling the first integrated circuit die to the second integrated circuit die, an encapsulant encapsulating the first integrated circuit die, the second integrated circuit die, and the routing die, and a first redistribution structure on and electrically connected to the die connectors of the first integrated circuit die and the second integrated circuit die.

An electronic component-embedded substrate includes a first core layer having a first through-hole, a first passive component disposed in the first through-hole, a second core layer disposed on the first core layer and having a second through-hole, a second passive component disposed in the second through-hole, an insulating material covering at least a portion of each of the first passive component and the second passive component and disposed in at least a portion of each of the first through-hole and the second through-hole, and a first wiring layer disposed on a level between the first passive component and the second passive component such that at least a portion of the first wiring layer is covered with the insulating material. The first passive component and the second passive component are connected to each other by the first wiring layer.

An electronic package is provided, in which a first electronic element and a second electronic element are disposed on a first side of a circuit structure and a second side of the circuit structure, respectively, where a first metal layer is formed between the first side of the circuit structure and the first electronic element, a second metal layer is formed on a surface of the second electronic element, and at least one thermally conductive pillar is disposed on the second side of the circuit structure and extends into the circuit structure to thermally conduct the first metal layer and the second metal layer. Therefore, through the thermally conductive pillar, heat generated during operations of the first electronic element and the second electronic element can be quickly dissipated to an external environment and would not accumulate.

A semiconductor device includes a first plurality of dies encapsulated by an encapsulant, an interposer over the first plurality of dies, an interconnect structure over and electrically connected to the interposer, and a plurality of conductive pads on a surface of the interconnect structure opposite the interposer. The interposer includes a plurality of embedded passive components. Each die of the first plurality of dies is electrically connected to the interposer. The interconnect structure includes a solenoid inductor in a metallization layer of the interconnect structure.

Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate, a first die coupled to the package substrate with first interconnects, and a second die coupled to the first die with second interconnects, wherein the second die is coupled to the package substrate with third interconnects, a communication network is at least partially included in the first die and at least partially included in the second die, and the communication network includes a communication pathway between the first die and the second die.

Reconstructed 3DIC structures and methods of manufacture are described. In an embodiment, one or more dies in each package level of a 3DIC are both functional chips and/or stitching devices for two or more dies in an adjacent package level. Thus, each die can function as a communication bridge between two other dies/chiplets in addition to performing a separate chip core function.

An apparatus is provided which comprises: a first die having a first surface and a second surface, the first die comprising: a first layer formed on the first surface of the first die, and a second layer formed on the second surface of the first die; a second die coupled to the first layer; and a plurality of structures to couple the apparatus to an external component, wherein the plurality of structures is coupled to the second layer.

Embodiments include semiconductor packages and methods of forming the semiconductor packages. A semiconductor package includes a die over a substrate, a first conductive layer over the die, and a conductive cavity antenna over the first conductive layer and substrate. The conductive cavity antenna includes a conductive cavity, a cavity region, and a plurality of interconnects. The conductive cavity is over the first conductive layer and surrounds the cavity region. The semiconductor package also includes a second conductive layer over the conductive cavity antenna, first conductive layer, and substrate. The conductive cavity extends vertically from the first conductive layer to the second conductive layer. The cavity region may be embedded with the conductive cavity, the first conductive layer, and the second conductive layer. The plurality of interconnects may include first, second, and third interconnects. The first interconnects may include through-mold vias (TMVs), through-silicon vias (TSVs), conductive sidewalls, or conductive trenches.

A package structure and a formation method of a package structure are provided. The method includes forming a conductive structure over a carrier substrate and disposing a semiconductor die over the carrier substrate. The method also includes forming a protective layer to surround the conductive structure and the semiconductor die. The method further includes forming an insulating layer over the protective layer. The insulating layer has an opening exposing a portion of the conductive structure. In addition, the method includes forming a conductive layer over the insulating layer. The conductive layer fills the opening, and the conductive layer has a substantially planar top surface.

Provided are a package structure and a method of forming the same. The package structure includes a first tier, a second tier, and a third tier. The first tier includes an interposer. The second tier is disposed on the first tier and includes a bottom die. The third tier is disposed on the second tier and includes a plurality of first dies and at least one second die. The at least one second die is disposed between the plurality of first dies. The plurality of first dies are electrically connected to the bottom die by a plurality of first connectors to form a signal path, the plurality of first dies are electrically connected to the interposer by a plurality of second connectors to form a power path, and the plurality of first connectors are closer to the at least one second die than the plurality of second connectors.