A semiconductor device is disclosed including an integrated memory module. The integrated memory module may include a pair of semiconductor die, which together, operate as a single, integrated flash memory. In one example, the first die may include the memory cell array and the second die may include the logic circuit such as CMOS integrated circuits. In one example, the second die may be flip-chip bonded to the first die. The flip-chip bond pads on the first and second dies may be made small, with a small pitch, to allow a large number of electrical interconnections between the first and second semiconductor dies.

In some embodiments, the present disclosure relates to a method of forming a package assembly. A wet etch stop layer is formed over a frontside of a semiconductor substrate. A sacrificial semiconductor layer is formed over the wet etch stop layer, and a dry etch stop layer is formed over the sacrificial semiconductor layer. A stack of semiconductor device layers may be formed over the dry etch stop layer. A bonding process is performed to bond the stack of semiconductor device layers to a frontside of an integrated circuit die, wherein the frontside of the semiconductor substrate faces the frontside of the integrated circuit die. A wet etching process is performed to remove the semiconductor substrate, and a dry etching process is performed to remove the wet etch stop layer and the sacrificial semiconductor layer.

A method and apparatus for conducting heat away from a semiconductor die are disclosed. A board assembly is disclosed that includes a first circuit board having an opening extending through the first circuit board. A Chemical Vapor Deposition Diamond (CVDD) window extends within the opening. A layer of thermally conductive paste extends over the CVDD window. A semiconductor die extends over the layer of thermally conductive paste such that a hot-spot on the semiconductor die overlies the CVDD window.

Semiconductor devices with controllers under stacks of semiconductor packages and associated systems and methods are disclosed herein. In one embodiment, a semiconductor device includes a package substrate, a controller attached to the package substrate, and at least two semiconductor packages disposed over the controller. Each semiconductor package includes a plurality of semiconductor dies. The semiconductor device further includes an encapsulant material encapsulating the controller and the at least two semiconductor packages.

Semiconductor devices with controllers under stacks of semiconductor packages and associated systems and methods are disclosed herein. In one embodiment, a semiconductor device includes a package substrate, a controller attached to the package substrate, and at least two semiconductor packages disposed over the controller. Each semiconductor package includes a plurality of semiconductor dies. The semiconductor device further includes an encapsulant material encapsulating the controller and the at least two semiconductor packages.

A method for manufacturing a die attach film includes forming a plurality of posts on a support sheet. The method includes forming an adhesive layer between the posts. A thermal conductivity of the adhesive layer is lower than a thermal conductivity of the posts. The method includes removing the support sheet.

Methods of manufacturing semiconductor packages. Implementations may include: providing a substrate with a first side, a second side, and a thickness; forming a plurality of pads on the first side of the substrate; and applying die attach material to the plurality of pads. The method may include bonding a wafer including a plurality of semiconductor die to the substrate at one or more die pads included in each die. The method may also include singulating the plurality of semiconductor die, overmolding the plurality of semiconductor die and the first side of the substrate with an overmold material, and removing the substrate to expose the plurality of pads and to form a plurality of semiconductor packages coupled together through the overmold material. The method also may include singulating the plurality of semiconductor packages to separate them.

Methods of manufacturing semiconductor packages. Implementations may include: providing a substrate with a first side, a second side, and a thickness; forming a plurality of pads on the first side of the substrate; and applying die attach material to the plurality of pads. The method may include bonding a wafer including a plurality of semiconductor die to the substrate at one or more die pads included in each die. The method may also include singulating the plurality of semiconductor die, overmolding the plurality of semiconductor die and the first side of the substrate with an overmold material, and removing the substrate to expose the plurality of pads and to form a plurality of semiconductor packages coupled together through the overmold material. The method also may include singulating the plurality of semiconductor packages to separate them.

Discussed generally herein are methods and devices including or providing an electromagnetic interference (EMI) shielding. A device can include substrate including electrical connection circuitry therein, ground circuitry on, or at least partially in the substrate, the ground circuitry at least partially exposed by a surface of the substrate, a die electrically connected to the connection circuitry and the ground circuitry, the die on the substrate, a conductive material on a die backside, and a conductive paste or one or more wires electrically connected to the ground circuitry and the conductive material.

A method includes removing an oxide layer from select areas of a surface of a metal structure of a lead frame to create openings that extend through the oxide layer to expose portions of the surface of the metal structure. The method further includes attaching a semiconductor die to the lead frame, performing an electrical connection process that electrically couples an exposed portion of the surface of the metal structure to a conductive feature of the semiconductor die, enclosing the semiconductor die in a package structure, and separating the electronic device from the lead frame. In one example, the openings are created by a laser ablation process. In another example, the openings are created by a chemical etch process using a mask. In another example, the openings are created by a plasma process.