Patent classifications
H01L2224/92247
INTERDIGITATED OUTWARD AND INWARD BENT LEADS FOR PACKAGED ELECTRONIC DEVICE
An electronic device includes a package structure, a first lead and a second lead. The first lead has a first portion extending outward from a side of the package structure and downward, and a second portion extending outward from the first portion away from the package side. The second lead has a first portion extending outward from the package side and downward, and a second portion extending inward from the first portion toward the package side, and a distal end of the second lead is spaced from the package side.
INTERDIGITATED OUTWARD AND INWARD BENT LEADS FOR PACKAGED ELECTRONIC DEVICE
An electronic device includes a package structure, a first lead and a second lead. The first lead has a first portion extending outward from a side of the package structure and downward, and a second portion extending outward from the first portion away from the package side. The second lead has a first portion extending outward from the package side and downward, and a second portion extending inward from the first portion toward the package side, and a distal end of the second lead is spaced from the package side.
INTEGRATED MAGNETIC ASSEMBLY WITH CONDUCTIVE FIELD PLATES
An electronic device includes a magnetic assembly with a multilevel lamination or metallization structure having a core layer, dielectric layers and conductive features formed in metal layers on or between the dielectric layers in respective planes of orthogonal first and second directions and stacked along an orthogonal third direction. The conductive features include first and second patterned conductive features forming first and second windings, first and second conductive capacitor plates, and first and second conductive field plates, in which the first conductive capacitor plate is between the first conductive field plate and the core layer along the third direction and the second conductive capacitor plate is between the second conductive field plate and the core layer along the third direction.
Semiconductor device
A semiconductor device, having a first semiconductor chip including a first side portion at a front surface thereof and a first control electrode formed in the first side portion, a second semiconductor chip including a second side portion at a front surface thereof and a second control electrode formed in the second side portion, a first circuit pattern, on which the first semiconductor chip and the second semiconductor chip are disposed, a second circuit pattern, and a first control wire electrically connecting the first control electrode, the second control electrode, and the second circuit pattern. The first side portion and the second side portion are aligned. The first control electrode and the second control electrode are aligned. The second circuit pattern are aligned with the first control electrode and the second control electrode.
Semiconductor device
A semiconductor device, having a first semiconductor chip including a first side portion at a front surface thereof and a first control electrode formed in the first side portion, a second semiconductor chip including a second side portion at a front surface thereof and a second control electrode formed in the second side portion, a first circuit pattern, on which the first semiconductor chip and the second semiconductor chip are disposed, a second circuit pattern, and a first control wire electrically connecting the first control electrode, the second control electrode, and the second circuit pattern. The first side portion and the second side portion are aligned. The first control electrode and the second control electrode are aligned. The second circuit pattern are aligned with the first control electrode and the second control electrode.
Power die package
A power die package includes a lead frame having a flag with power leads on one lateral side and signal leads on one or more other lateral sides. A power die is attached to a bottom surface of the flag and electrically connected to the power leads with a conductive epoxy. A control die is attached to a top surface of the flag and electrically connected to the signal leads with bond wires. A mold compound is provided that encapsulates the dies, the bond wires, and proximal parts of the leads, while distal ends of the leads are exposed, forming a PQFN package.
Electromagnetic shields with bonding wires for sub-modules
Electromagnetic shields for electronic devices, and particularly electromagnetic shields with bonding wires for sub-modules of electronic devices are disclosed. Electronic modules are disclosed that include multiple sub-modules arranged on a substrate with an electromagnetic shield arranged on or over the sub-modules. Bonding wires are disclosed that form one or more bonding wire walls along the substrate. The one or more bonding wire walls may be located between sub-modules of a module and about peripheral boundaries of the module. The electromagnetic shield may be electrically coupled to ground by way of the one or more bonding wire walls. Portions of the electromagnetic shield and the one or more bonding wire walls may form divider walls that are configured to reduce electromagnetic interference between the sub-modules or from external sources.
Copper wire bond on gold bump on semiconductor die bond pad
A semiconductor package includes a conductive pad, a semiconductor die with an aluminum bond pad over a dielectric layer of the semiconductor die, a gold bump on the aluminum bond pad, a first intermetallic layer of gold and aluminum between the aluminum bond pad and the gold bump, a copper ball bond on the gold bump, a second intermetallic layer of copper and gold between the copper ball bond and the gold bump, a copper wire extending from the copper ball bond to the conductive pad, a stitch bond between the copper wire and the conductive pad.
Copper wire bond on gold bump on semiconductor die bond pad
A semiconductor package includes a conductive pad, a semiconductor die with an aluminum bond pad over a dielectric layer of the semiconductor die, a gold bump on the aluminum bond pad, a first intermetallic layer of gold and aluminum between the aluminum bond pad and the gold bump, a copper ball bond on the gold bump, a second intermetallic layer of copper and gold between the copper ball bond and the gold bump, a copper wire extending from the copper ball bond to the conductive pad, a stitch bond between the copper wire and the conductive pad.
COPPER PASTE FOR JOINING, METHOD FOR MANUFACTURING JOINED BODY, AND JOINED BODY
A copper paste for joining contains metal particles and a dispersion medium, in which the copper paste for joining contains copper particles as the metal particles, and the copper paste for joining contains dihydroterpineol as the dispersion medium. A method for manufacturing a joined body is a method for manufacturing a joined body which includes a first member, a second member, and a joining portion that joins the first member and the second member, the method including: a first step of printing the above-described copper paste for joining to at least one joining surface of the first member and the second member to prepare a laminate having a laminate structure in which the first member, the copper paste for joining, and the second member are laminated in this order; and a second step of sintering the copper paste for joining of the laminate.