A semiconductor device package and method of manufacturing is provided. An interconnect pre-assembly includes a first frame having a plurality of first signal conduits affixed to a second frame having a plurality of second signal conduits embedded in a second substrate forming an electrical coupling between one or more first signal conduits and one or more of the second signal conduits. One or more conductive balls are connected to the one or more second signal conduits. The interconnect pre-assembly is placed over a semiconductor die, having at least one of the first conductive balls disposed over the semiconductor die. An encapsulant encapsulates the interconnect pre-assembly, the semiconductor die, and the one or more conductive balls, such that a portion of the one or more first conductive balls is exposed at a top surface of the encapsulant.

A semiconductor package using a coreless signal distribution structure (CSDS) is disclosed and may include a CSDS comprising at least one dielectric layer, at least one conductive layer, a first surface, and a second surface opposite to the first surface. The semiconductor package may also include a first semiconductor die having a first bond pad on a first die surface, where the first semiconductor die is bonded to the first surface of the CSDS via the first bond pad, and a second semiconductor die having a second bond pad on a second die surface, where the second semiconductor die is bonded to the second surface of the CSDS via the second bond pad. The semiconductor package may further include a metal post electrically coupled to the first surface of the CSDS, and a first encapsulant material encapsulating side surfaces and a surface opposite the first die surface of the first semiconductor die, the metal post, and a portion of the first surface of the CSDS.

A semiconductor chip module includes a PCB including first and second faces; a buffer on the first face; a first chip on the first face, and including a first connection terminal and a second connection terminal, a first signal being provided to the first connection terminal, and a second signal being provided to the second connection terminal; a second chip on the second face, and including a third connection terminal to which the first signal is provided, and a fourth connection terminal to which the second signal is provided. The first connection terminal and the third connection terminal may receive the first signal from the buffer at the same time. The first connection terminal may be closer to the buffer as compared with the second connection terminal. The third connection terminal may be closer to the buffer as compared with the fourth connection terminal.

A package includes an Integrated Voltage Regulator (IVR) die, wherein the IVR die includes metal pillars at a top surface of the first IVR die. The package further includes a first encapsulating material encapsulating the first IVR die therein, wherein the first encapsulating material has a top surface coplanar with top surfaces of the metal pillars. A plurality of redistribution lines is over the first encapsulating material and the IVR die. The plurality of redistribution lines is electrically coupled to the metal pillars. A core chip overlaps and is bonded to the plurality of redistribution lines. A second encapsulating material encapsulates the core chip therein, wherein edges of the first encapsulating material and respective edges of the second encapsulating material are vertically aligned to each other. An interposer or a package substrate is underlying and bonded to the IVR die.

A semiconductor device package and a semiconductor apparatus are provided. The semiconductor device includes a first semiconductor package, a second semiconductor package, and an interposer between the first and second semiconductor packages. The first semiconductor package includes a first semiconductor package substrate and a first semiconductor chip. The second semiconductor package includes a second semiconductor package substrate and a second semiconductor chip. The interposer electrically connects the first semiconductor package to the second semiconductor package and includes a first interposer hole passing through the interposer. The first semiconductor chip includes a second portion which protrudes from a first portion, and the second portion is inserted into the first interposer hole.

Disclosed are semiconductor packages and methods of fabricating the same. The semiconductor package includes a redistribution substrate including redistribution line patterns in a dielectric layer, and a semiconductor chip on the redistribution substrate. The semiconductor chip includes chip pads electrically connected to the redistribution line patterns. Each of the redistribution line patterns has a substantially planar top surface and a nonplanar bottom surface. Each of the redistribution line patterns includes a central portion and edge portions on opposite sides of the central portion. Each of the redistribution line patterns has a first thickness as a minimum thickness at the central portion and a second thickness as a maximum thickness at the edge portions.

The present invention relates to a module that has a lower component of a module (1) having a material (3) in which at least one first structural element (4) is embedded, and an upper component of a module (2) having a material (3) in which at least a second component (16) is embedded. The upper component of the module (2) and the lower component of the module (1) are stacked, with the lower and the upper component of the module (2) being electrically connected and mechanically linked to each other. In addition, the present invention relates to a simple and cost-effective process for the production of a variety of modules. The invention makes it possible for the modules to be miniaturized with respect to surface and height and/or makes it possible to achieve greater integration by 3D packaging.

Provided is an electronic component including a pad region including a plurality of pads extending along corresponding extension lines and arranged in a first direction, and a signal wire configured to receive a driving signal from the pad region, wherein the plurality of pads include a plurality of first pads arranged continuously and a plurality of second pads arranged continuously, and extension lines of the plurality of first pads substantially converge into a first point and extension lines of the plurality of second pads substantially converge into a second point different from the first point.

An integrated circuit package and a method of forming the same are provided. A method includes attaching a first side of an integrated circuit die to a carrier. An encapsulant is formed over and around the integrated circuit die. The encapsulant is patterned to form a first opening laterally spaced apart from the integrated circuit die and a second opening over the integrated circuit die. The first opening extends through the encapsulant. The second opening exposes a second side of the integrated circuit die. The first side of the integrated circuit die is opposite the second side of the integrated circuit die. A conductive material is simultaneously deposited in the first opening and the second opening.

A semiconductor package comprises a lower package, a metal layer on the lower package, a ground member on the metal layer, coupled thereto, and an upper package on the lower package. The upper package comprises a ground pattern on a first insulation pattern. The first insulation pattern is on a bottom surface of the upper package and has a hole through which the ground pattern is exposed. The ground member extends inside the hole and is coupled to the ground pattern.