The semiconductor apparatus includes: a thermal source TS including a semiconductor device generating heat in an operating state; a thermal diffusion unit thermally connected to the thermal source TS, the thermal diffusion unit including space in a direction opposite to the thermal source; a plurality of air-cooling fin units disposed in the space of the thermal diffusion unit, one end of the plurality of fin unit is connected to the thermal diffusion unit; and a base unit connected to the thermal diffusion unit, wherein the plurality of air-cooling fin units is connected to the base unit through a plurality of thermal contact units CP1, CP2, CP3, . . . , CPn. Provide is an air-cooling type semiconductor apparatus, power module, and power supply, each having high heat dissipation performance and realizing light weight.

The semiconductor device includes a semiconductor element, a first conductive member, a second conductive member, an insulating member, a first main terminal, and a second main terminal. The first main terminal and the second main terminal, respectively, extend from the first conductive member and the second conductive member. The first main terminal and the second main terminal, respectively, have a first projecting portion and a second projecting portion projecting outside of the insulating member. The first projecting portion and the second projecting portion, respectively, have a first facing portion and a second facing portion at which plate surfaces of the first and second projecting portions face each other across a gap, and a first non-facing portion and a second non-facing portion at which the plate surfaces of the first and second projecting portions do not face each other.

Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a core substrate with a first conductive structure having a first thickness on the core substrate, and a second conductive structure having a second thickness on the core substrate, where the first thickness is different than the second thickness.

A semiconductor package for double sided cooling includes a first and a second carrier facing each other, at least one power semiconductor chip arranged between the first and second carriers, external contacts arranged at least partially between the first and second carriers, and spring elements arranged between the first and second carriers and configured to keep the first and second carriers at a predefined distance from each other.

The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, amounting layer, switching elements, a moisture-resistant layer and a sealing resin. The substrate has a front surface facing in a thickness direction. The mounting layer is electrically conductive and disposed on the front surface. Each switching element includes an element front surface facing in the same direction in which the front surface faces along the thickness direction, a back surface facing in the opposite direction of the element front surface, and a side surface connected to the element front surface and the back surface. The switching elements are electrically bonded to the mounting layer with their back surfaces facing the front surface. The moisture-resistant layer covers at least one side surface. The sealing resin covers the switching elements and the moisture-resistant layer. The moisture-resistant layer is held in contact with the mounting layer and the side surface so as to be spanned between the mounting layer and the side surface in the thickness direction.

A package structure and a method of forming the same are provided. The package structure includes a die, an encapsulant, a polymer layer and a redistribution layer. The encapsulant laterally encapsulates the die. The polymer layer is on the encapsulant and the die. The polymer layer includes an extending portion having a bottom surface lower than a top surface of the die. The redistribution layer penetrates through the polymer layer to connect to the die.

An electronic power conversion component includes an electrically conductive package base comprising a source terminal, a drain terminal, at least one I/O terminal and a die-attach pad wherein the source terminal is electrically isolated from the die-attach pad. A GaN-based semiconductor die is secured to the die attach pad and includes a power transistor having a source and a drain, wherein the source is electrically coupled to the source terminal and the drain is electrically coupled to the drain terminal. A plurality of wirebonds electrically couple the source to the source terminal and the drain to the drain terminal. An encapsulant is formed over the GaN-based semiconductor die, the plurality of wirebonds and at least a top surface of the package base.

A semiconductor device of embodiments includes an insulating substrate, a first main terminal, a second main terminal, an output terminal, a first metal layer connected to the first main terminal, a second metal layer connected to the second main terminal, a third metal layer disposed between the first metal layer and the second metal layer and connected to the output terminal, a first semiconductor chip and a second semiconductor chip provided on the first metal layer, a third semiconductor chip and a fourth semiconductor chip provided on the third metal layer, and a conductive member on the second metal layer. Then, the second metal layer includes a slit. The conductive member is provided between the end portion of the second metal layer and the slit.

A die can be applied to a front conductive layer. Openings can be formed in the conductive layer over contact points on the die. The openings can be filled with a conductive material to electrically couple the conductive layer to the contact points on the die. The front conductive layer can be etched to form a first conductive pattern. Conductive standoffs can be formed on portions of the front conductive layer. An additional front conductive layer can be laminated onto the front side. Openings can be formed in the additional front conductive layer over the standoffs. The openings can be filled with a conductive material to electrically couple the additional conductive layer to the underlying standoffs. The additional conductive layer can be etched to form a second conductive pattern.

The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, amounting layer, switching elements, a moisture-resistant layer and a sealing resin. The substrate has a front surface facing in a thickness direction. The mounting layer is electrically conductive and disposed on the front surface. Each switching element includes an element front surface facing in the same direction in which the front surface faces along the thickness direction, a back surface facing in the opposite direction of the element front surface, and a side surface connected to the element front surface and the back surface. The switching elements are electrically bonded to the mounting layer with their back surfaces facing the front surface. The moisture-resistant layer covers at least one side surface. The sealing resin covers the switching elements and the moisture-resistant layer. The moisture-resistant layer is held in contact with the mounting layer and the side surface so as to be spanned between the mounting layer and the side surface in the thickness direction.