H01L2924/14253

Stacking of three-dimensional circuits including through-silicon-vias
10700041 · 2020-06-30 · ·

An assembly of circuit dies is stacked through oxide-oxide bonding. The assembly includes a silicon substrate, in which a plurality of through-silicon-vias are formed. The silicon substrate is attached onto a die through dielectric-dielectric bonding with at least part of the through-silicon-vias electrically connected to the die. The silicon substrate and die are attached onto another die through oxide-oxide bonding. Then the through-silicon-vias are revealed. The silicon substrate functions as a carrier substrate before the revealing. The silicon substrate and two dies can be attached to a printed circuit board, which is electrically connected to the two dies. One or more electrical components can be attached onto the silicon substrate and electrically connected to the die through the through-silicon-vias. The silicon substrate may include a metal element for diffusing heat generated from operation of the one or more electrical components.

STACKING OF THREE-DIMENSIONAL CIRCUITS INCLUDING THROUGH-SILICON-VIAS
20200098729 · 2020-03-26 ·

An assembly of circuit dies is stacked through oxide-oxide bonding. The assembly includes a silicon substrate, in which a plurality of through-silicon-vias are formed. The silicon substrate is attached onto a die through dielectric-dielectric bonding with at least part of the through-silicon-vias electrically connected to the die. The silicon substrate and die are attached onto another die through oxide-oxide bonding. Then the through-silicon-vias are revealed. The silicon substrate functions as a carrier substrate before the revealing. The silicon substrate and two dies can be attached to a printed circuit board, which is electrically connected to the two dies. One or more electrical components can be attached onto the silicon substrate and electrically connected to the die through the through-silicon-vias. The silicon substrate may include a metal element for diffusing heat generated from operation of the one or more electrical components.

DOUBLE-SIDED HERMETIC MULTICHIP MODULE
20190348334 · 2019-11-14 ·

A packaged electronic module for downhole applications, in particular in a petrochemical well or similar environment. The electronic module includes one or more electronic components located on each side of a substrate, where the one or more electronic components are attached to the substrate by means of glue.

MAGNETICALLY COUPLED GALVANICALLY ISOLATED COMMUNICATION USING LEAD FRAME

An integrated circuit package includes a lead frame and an encapsulation that substantially encloses the lead frame. The lead frame further includes a first conductor comprising a first conductive loop and a second conductor galvanically isolated from the first conductor, proximate to and magnetically coupled to the first conductive loop to provide a communication link between the first and second conductor. The second conductor includes a first conductive portion, a second conductive portion, and a wire coupling together the first conductive portion and the second conductive portion.

BACK-TO-BACK STACKED DIES

Embodiments disclosed herein provide for a circuit including first die having an active side and a backside, wherein the first die is flip-chip mounted to a carrier. The circuit also includes a second die stacked on the backside of the first die, wherein the second die is stacked on the first die such that a backside of the second die is facing the backside of the first die and an active side of the second die faces away from the first die.

Magnetically coupled galvanically isolated communication using lead frame

An integrated circuit package includes an encapsulation and a lead frame. A portion of the lead frame is disposed within the encapsulation. The lead frame includes a first conductor having an inner conductive loop disposed substantially within the encapsulation and a second conductor galvanically isolated from the first conductor. The second conductor includes an outer conductive loop disposed substantially within the encapsulation proximate to and magnetically coupled to the inner conductive loop to provide a communication link between the first and second conductors.

CAPACITIVE COUPLING PACKAGE STRUCTURE
20240194573 · 2024-06-13 ·

A capacitive coupling package structure includes a first lead frame, a second lead frame, a plurality of transmitter modules, a plurality of receiver modules, and a spacer. The second lead frame corresponds to and is aligned with the first lead frame, and a gap is defined between the first lead frame and the second lead frame. The transmitter modules are each disposed on a first surface of the first lead frame or a second surface of the second lead frame. The receiver modules are each disposed on the first surface of the first lead frame or the second surface of the second lead frame. First and second signal output plates of the transmitter module and first and second signal input plates of the receiver module are disposed respectively through a plurality of floating leads, and are spaced apart from each other by a predetermined distance.

Back-to-back stacked dies

Embodiments disclosed herein provide for a circuit including first die having an active side and a backside, wherein the first die is flip-chip mounted to a carrier. The circuit also includes a second die stacked on the backside of the first die, wherein the second die is stacked on the first die such that a backside of the second die is facing the backside of the first die and an active side of the second die faces away from the first die.

Magnetically coupled galvanically isolated communication using lead frame

An integrated circuit package includes an electromagnetic communication link formed by a portion of a lead frame within an encapsulation. The lead frame includes a first conductor forming a first conductive loop a second conductor forming a second conductive loop galvanically isolated from the first conductive loop. The second conductive loop is magnetically coupled to the first conductive loop to provide a magnetic communication link between the first and second conductors. A first transceiver circuit includes a transmit circuit coupled to the first conductive loop. A second transceiver circuit includes a receive circuit coupled to the second conductive loop. A signal transmitted from the transmit circuit included in first transceiver circuit and coupled to the first conductor is coupled to be magnetically communicated through the magnetic communication link to the receive circuit included in second transceiver circuit and coupled to the second conductor.

MAGNETICALLY COUPLED GALVANICALLY ISOLATED COMMUNICATION USING LEAD FRAME
20180226893 · 2018-08-09 ·

An integrated circuit package includes an encapsulation and a lead frame. A portion of the lead frame is disposed within the encapsulation. The lead frame includes a first conductor having an inner conductive loop disposed substantially within the encapsulation and a second conductor galvanically isolated from the first conductor. The second conductor includes an outer conductive loop disposed substantially within the encapsulation proximate to and magnetically coupled to the inner conductive loop to provide a communication link between the first and second conductors.