A chip package structure includes a first chip, a second chip, and a carrier board. The first chip is disposed between the second chip and the carrier board. An active layer of the first chip is opposite to an active layer of the second chip. A first interconnection structure is disposed between the first chip and the second chip and is configured to couple the active layer of the first chip to the active layer of the second chip. A first conductor pillar is disposed in the first chip. One end of the first conductor pillar is coupled to the active layer of the first chip, and the other end of the first conductor passes through the first chip to be coupled to a circuit in the carrier board.

An electrical device that includes at least two active wafers having at least one through silicon via, and at least one unitary electrical communication and spacer structure present between a set of adjacently stacked active wafers of the at least two active wafers. The unitary electrical communication and spacer structure including an electrically conductive material core providing electrical communication to the at least one through silicon via structure in the set of adjacently stacked active wafers and a substrate material outer layer. The at least one unitary electrical communication and spacer structure being separate from and engaged to the adjacently stacked active wafers, wherein coolant passages are defined between surfaces of the adjacently stacked active wafers and the at least one unitary electrical communication and spacer structure.

Electronic device package technology is disclosed. An electronic device package in accordance with the present disclosure can include an electronic component, a redistribution layer, and an interposer electrically coupling the redistribution layer and the electronic component. The interposer can have interconnect interfaces on a top side electrically coupled to the electronic component and interconnect interfaces on a bottom side electrically coupled to the redistribution layer. A density of the interconnect interfaces on the top side can be greater than a density of the interconnect interfaces on the bottom side. Associated systems and methods are also disclosed.

A semiconductor package includes a package substrate, a plurality of semiconductor devices stacked on the package substrate, a plurality of underfill fillets disposed between the plurality of semiconductor devices and between the package substrate and the plurality of semiconductor devices, and a molding resin at least partially surrounding the plurality of semiconductor devices and the plurality of underfill fillets. The plurality of underfill fillets include a plurality of protrusions that protrude from spaces between each of the plurality of semiconductor devices or between the package substrate and each of the plurality of semiconductor devices. At least two neighboring underfill fillet protrusions of the plurality of protrusions form one continuous structure without an interface therebetween.

A first circuit formed on a first semiconductor substrate is wafer-bonded to a second circuit formed on a second memory circuit, wherein the first circuit includes quasi-volatile or non-volatile memory circuits and wherein the second memory circuit includes fast memory circuits that have lower read latencies than the quasi-volatile or non-volatile memory circuits, as well as logic circuits. The volatile and non-volatile memory circuits may include static random-access memory (SRAM) circuits, dynamic random-access memory (DRAM) circuits, embedded DRAM (eDRAM) circuits, magnetic random-access memory (MRAM) circuits, embedded MRAM (eMRAM), or any suitable combination of these circuits.

A semiconductor device includes a first terminal, a second terminal, and a plurality of third terminals on a substrate. Memory chips are stacked on the substrate in an offset manner. Each memory chip has first pads, second pads, and third pads thereon. A first bonding wire is electrically connected to the first terminal and physically connected to a first pad of each memory chip. A second bonding wire is electrically connected to the second terminal and physically connected to a second pad of each memory chip. A third bonding wire electrically connects one third terminal to a third pad on each memory chip. A fourth bonding wire is connected to the first bonding wire at a first pad on a first memory chip of the stack and another first pad on the first memory chip. The fourth bonding wire straddles over the second bonding wire and the third bonding wire.

A semiconductor package includes a package substrate, a plurality of semiconductor devices stacked on the package substrate, a plurality of underfill fillets disposed between the plurality of semiconductor devices and between the package substrate and the plurality of semiconductor devices, and a molding resin at least partially surrounding the plurality of semiconductor devices and the plurality of underfill fillets. The plurality of underfill fillets include a plurality of protrusions that protrude from spaces between each of the plurality of semiconductor devices or between the package substrate and each of the plurality of semiconductor devices. At least two neighboring underfill fillet protrusions of the plurality of protrusions form one continuous structure without an interface therebetween.

Alternative surfaces for conductive pad layers of silicon bridges for semiconductor packages, and the resulting silicon bridges and semiconductor packages, are described. In an example, a semiconductor structure includes a substrate having a lower insulating layer disposed thereon. The substrate has a perimeter. A metallization structure is disposed on the lower insulating layer. The metallization structure includes conductive routing disposed in a dielectric material stack. First and second pluralities of conductive pads are disposed in a plane above the metallization structure. Conductive routing of the metallization structure electrically connects the first plurality of conductive pads with the second plurality of conductive pads. An upper insulating layer is disposed on the first and second pluralities of conductive pads. The upper insulating layer has a perimeter substantially the same as the perimeter of the substrate.

A semiconductor package includes a first electric integrated circuit component, a second integrated circuit component, and a first plasmonic bridge. The second electric integrated circuit component is aside the first electric integrated circuit component. The first plasmonic bridge is vertically overlapped with both the first electric integrated circuit component and the second electric integrated circuit component. The first plasmonic bridge includes a first plasmonic waveguide optically connecting the first electric integrated circuit component and the second electric integrated circuit component.

A device may include a fabric die coupled to an active interposer. The fabric die may include programmable logic fabric and configuration memory that programs the programmable logic fabric. The programmable logic fabric of the fabric die may access at least a portion of the active interposer to perform an operation. As discussed herein, different power management techniques associated with the active interposer may be used to improve operation of the device.