Exemplary embodiments of the invention include a method and apparatus for assembling a semiconductor device. The method may include heating the semiconductor device, which comprises a printed circuit card and a packaging laminate, according to a device heating profile to melt solder material located between an array of contact points on the printed circuit card and an array of corresponding contact points on the packaging laminate; and cooling the semiconductor device to solidify the solder material, wherein during at least a portion of the cooling a temperature of the printed circuit card is kept at substantially a same temperature or a higher temperature than a temperature of an electronic module attached to the packaging laminate opposite the corresponding array of contact points.

An embodiment related to a stacked package is disclosed. The stacked package includes a conductive gang with gang legs electrically coupling a second component stacked over a first die to a package substrate. The first die is mounted over a die attach region of the package substrate and electrically coupled to the package substrate.

Provided is a semiconductor package in which a bonding structure is formed using metal grains included in metal powder layers having a coefficient of thermal expansion (CTE) similar with those of a substrate and a conductor so as to minimize generation of cracks and to improve reliability of bonded parts.

Provided is a semiconductor package in which a bonding structure is formed using metal grains included in metal powder layers having a coefficient of thermal expansion (CTE) similar with those of a substrate and a conductor so as to minimize generation of cracks and to improve reliability of bonded parts.

A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

Provided is a semiconductor package in which a bonding structure is formed using metal grains included in metal powder layers having a coefficient of thermal expansion (CTE) similar with those of a substrate and a conductor so as to minimize generation of cracks and to improve reliability of bonded parts.

Provided is a semiconductor package in which a bonding structure is formed using metal grains included in metal powder layers having a coefficient of thermal expansion (CTE) similar with those of a substrate and a conductor so as to minimize generation of cracks and to improve reliability of bonded parts.

An embodiment of the invention may include a method, and resulting structure, of forming a semiconductor structure. The method may include forming a component hole from a first surface to a second surface of a base layer. The method may include placing an electrical component in the component hole. The electrical component has a conductive structure on both ends of the electrical component. The electrical component is substantially parallel to the first surface. The method may include forming a laminate layer on the first surface of the base layer, the second surface of the base layer, and between the base layer and the electrical component. The method may include creating a pair of via holes, where the pair of holes align with the conductive structures on both ends of the electrical component. The method may include forming a conductive via in the pair of via holes.

A method of forming a chip package is provided. The method includes providing a malleable carrier with a layer of an electrically conductive material formed thereon, and positive fitting the malleable carrier to a chip to at least partially enclose the chip with the malleable carrier. The layer at least partially physically contacts the chip, such that the layer electrically contacts a chip contact of the chip. The layer forms a redistribution layer.

A semiconductor package includes: a carrier having a first side and a second side opposite the first side, the first side having a plurality of contact structures; a semiconductor die having a first side and a second side opposite the first side, the first side of the semiconductor die having a plurality of pads attached to the plurality of contact structures at the first side of the carrier; a metal plate attached to the second side of the semiconductor die, the metal plate having a size that is independent of the size of the carrier and based on an expected thermal load to be presented by the semiconductor die; and an encapsulant confined by the carrier and the metal plate and laterally surrounding an edge of the semiconductor die. Corresponding methods of production are also provided.