The present disclosure is directed to a leadframe package with a surface mounted semiconductor die coupled to leads of the leadframe package through wire bonding. The leads are partially exposed outside the package and configured to couple to another structure, like a printed circuit board (PCB). The exposed portions, namely outer segments, of the leads include a plating or coating layer of a material that enhances the solder wettability of the leads to the PCB through solder bonding. The enclosed portions, namely inner segments, of the leads do not include the plating layer of the outer segment and, thus, include a different surface material or surface finish.

A device comprises a substrate and an adhesive nanoparticle layer patterned into zones of electrical conductance and insulation on top of the substrate surface. A diffusion region adjoining the surface comprises an admixture of the nanoparticles in the substrate material. When the nanoparticle layer is patterned from originally all-conductive nanoparticles, the insulating zones are created by selective oxidation; when the nanoparticle layer is patterned from originally all-non-conductive nanoparticles, the conductive zones are created by depositing selectively a volatile reducing agent. A package of insulating material is in touch with the nanoparticle layer and fills any voids in the nanoparticle layer.

A device comprises a substrate and an adhesive nanoparticle layer patterned into zones of electrical conductance and insulation on top of the substrate surface. A diffusion region adjoining the surface comprises an admixture of the nanoparticles in the substrate material. When the nanoparticle layer is patterned from originally all-conductive nanoparticles, the insulating zones are created by selective oxidation; when the nanoparticle layer is patterned from originally all-non-conductive nanoparticles, the conductive zones are created by depositing selectively a volatile reducing agent. A package of insulating material is in touch with the nanoparticle layer and fills any voids in the nanoparticle layer.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170 C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170 C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170 C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170 C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

Embodiments of the present application provide the chip packaging structure, the chip module and the electronic terminal. In the chip packaging structure, the chip is accommodated in the trench of the substrate to decrease the thickness and volume of the chip packaging structure; and the plastic package is provided on the surface of the substrate on which the chip is disposed to plastically package the chip, which not only ensures the structural strength of the chip packaging structure, but also reduces the warpage that may be caused due to the decrease of the thickness of the chip packaging structure as much as possible. In addition, the surface of the plastic package is treated to be a flat surface, such that the chip module has good flatness and the adaptability of the chip module is improved.

A semiconductor device includes a leadframe having a flag and a plurality of bond terminals. A semiconductor die is attached to the leadframe at the flag. A bond pad is formed on the semiconductor die. A top surface layer of the bond pad includes copper having a predetermined grain orientation. A bond wire includes a first end and a second end. The bond wire is attached to the bond pad at the first end and attached to one of the bond terminals in the plurality at the second end.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 m. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175 C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.