An electronic device includes a semiconductor die having a lower surface, a sintered metallic layer underlying the lower surface of the semiconductor die, a conductive layer underlying the sintered metallic layer, and a conductive substrate underlying the conductive layer.

A device comprises a substrate and an adhesive nanoparticle layer patterned into zones of electrical conductance and insulation on top of the substrate surface. A diffusion region adjoining the surface comprises an admixture of the nanoparticles in the substrate material. When the nanoparticle layer is patterned from originally all-conductive nanoparticles, the insulating zones are created by selective oxidation; when the nanoparticle layer is patterned from originally all-non-conductive nanoparticles, the conductive zones are created by depositing selectively a volatile reducing agent. A package of insulating material is in touch with the nanoparticle layer and fills any voids in the nanoparticle layer.

A device comprises a substrate and an adhesive nanoparticle layer patterned into zones of electrical conductance and insulation on top of the substrate surface. A diffusion region adjoining the surface comprises an admixture of the nanoparticles in the substrate material. When the nanoparticle layer is patterned from originally all-conductive nanoparticles, the insulating zones are created by selective oxidation; when the nanoparticle layer is patterned from originally all-non-conductive nanoparticles, the conductive zones are created by depositing selectively a volatile reducing agent. A package of insulating material is in touch with the nanoparticle layer and fills any voids in the nanoparticle layer.

A method for manufacturing a semiconductor device includes preparing a semiconductor chip having a back surface made of a Cu layer. The semiconductor chip is bonded to a die pad having a front surface made of Cu via a bonding material containing a dissimilar metal not containing Cu and Pb and a Bi-based material so that the Cu layer and the bonding material come into contact with each other. After the bonding, the die pad is then heat-treated.

A method for manufacturing a semiconductor device includes preparing a semiconductor chip having a back surface made of a Cu layer. The semiconductor chip is bonded to a die pad having a front surface made of Cu via a bonding material containing a dissimilar metal not containing Cu and Pb and a Bi-based material so that the Cu layer and the bonding material come into contact with each other. After the bonding, the die pad is then heat-treated.

A semiconductor device having a leadframe including a pad (101) surrounded by elongated leads (110) spaced from the pad by a gap (113) and extending to a frame, the pad and the leads having a first thickness (115) and a first and an opposite and parallel second surface; the leads having a first portion (112) of first thickness near the gap and a second portion (111) of first thickness near the frame, and a zone (114) of reduced second thickness (116) between the first and second portions; the second surface (112a) of the first lead portions is coplanar with the second surface (111a) of the second portions. A semiconductor chip (220) with a terminal is attached the pad. A metallic wire connection (230) from the terminal to an adjacent lead includes a stitch bond (232) attached to the first surface of the lead.

A method for manufacturing a semiconductor device includes preparing a semiconductor chip having a back surface made of a Cu layer. The semiconductor chip is bonded to a die pad having a front surface made of Cu via a bonding material containing a dissimilar metal not containing Cu and Pb and a Bi-based material so that the Cu layer and the bonding material come into contact with each other. After the bonding, the die pad is then heat-treated.

A method for manufacturing a semiconductor device includes preparing a semiconductor chip having a back surface made of a Cu layer. The semiconductor chip is bonded to a die pad having a front surface made of Cu via a bonding material containing a dissimilar metal not containing Cu and Pb and a Bi-based material so that the Cu layer and the bonding material come into contact with each other. After the bonding, the die pad is then heat-treated.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 m. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175 C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 m. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175 C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.