A semiconductor structure includes a substrate including a first surface and a second surface opposite to the first surface; a dielectric layer disposed over the second surface or below the first surface; a polymeric layer disposed over or below the dielectric layer; an isolation layer surrounding and contacted with the substrate, the dielectric layer and the polymeric layer; a die disposed over the polymeric layer; a first conductive bump disposed below the first surface of the substrate; and a second conductive bump disposed between the second surface of the substrate and the die.

An IC chip structure including a plurality of IC chips electrically connected to one another in back-end-of-line (BEOL) interconnect layer of the structure is disclosed. The IC structure may include openings in crack-stop structures surrounding the IC chips and a interconnect wire extending between the IC chips through the openings. A packaging structure for utilizing the IC structure where at least one IC chip is inoperable is also disclosed. The structure may include a first bond pad array on a top surface of a packaging substrate including operable bond pads connected to an operable IC chip and structural support bond pads connected to the inoperable IC chip; a second bond pad array on a bottom surface of the substrate including operable bond pads connected to a single IC chip printed circuit board; and an interconnect structure for connecting the operable bond pads of the first and second bond pad arrays.

A semiconductor structure includes a substrate including a first surface and a second surface opposite to the first surface; a dielectric layer disposed over the second surface or below the first surface; a polymeric layer disposed over or below the dielectric layer; an isolation layer surrounding and contacted with the substrate, the dielectric layer and the polymeric layer; a die disposed over the polymeric layer; a first conductive bump disposed below the first surface of the substrate; and a second conductive bump disposed between the second surface of the substrate and the die.

A semiconductor structure includes a substrate including a first surface and a second surface opposite to the first surface; a dielectric layer disposed over the second surface or below the first surface; a polymeric layer disposed over or below the dielectric layer; an isolation layer surrounding and contacted with the substrate, the dielectric layer and the polymeric layer; a die disposed over the polymeric layer; a first conductive bump disposed below the first surface of the substrate; and a second conductive bump disposed between the second surface of the substrate and the die.

A thermal conducting sheet including: a binder resin; carbon fibers; and a thermal conducting filler other than the carbon fibers, wherein a mass ratio (carbon fibers/binder resin) of the carbon fibers to the binder resin is less than 1.30, wherein an amount of the thermal conducting filler is from 48% by volume through 70% by volume, and wherein the carbon fibers are oriented in a thickness direction of the thermal conducting sheet.

A semiconductor structure includes a substrate including a first surface, a second surface opposite to the first surface, a first sidewall substantially orthogonal to the first surface and the second surface; an isolation layer surrounding and contacted with the first sidewall of the substrate; a die disposed over the second surface of the substrate; a first conductive bump disposed at the first surface of the substrate; and a second conductive bump disposed between the substrate and the die.

A semiconductor structure includes a substrate including a first surface, a second surface opposite to the first surface, a first sidewall substantially orthogonal to the first surface and the second surface; an isolation layer surrounding and contacted with the first sidewall of the substrate; a die disposed over the second surface of the substrate; a first conductive bump disposed at the first surface of the substrate; and a second conductive bump disposed between the substrate and the die.

An IC chip structure including a plurality of IC chips electrically connected to one another in back-end-of-line (BEOL) interconnect layer of the structure is disclosed. The IC structure may include openings in crack-stop structures surrounding the IC chips and a interconnect wire extending between the IC chips through the openings. A packaging structure for utilizing the IC structure where at least one IC chip is inoperable is also disclosed. The structure may include a first bond pad array on a top surface of a packaging substrate including operable bond pads connected to an operable IC chip and structural support bond pads connected to the inoperable IC chip; a second bond pad array on a bottom surface of the substrate including operable bond pads connected to a single IC chip printed circuit board; and an interconnect structure for connecting the operable bond pads of the first and second bond pad arrays.

An electronic device includes a multilevel package substrate, a die, a lid, and a package structure that encloses the die, a portion of the lid, and a portion of the multilevel package substrate, where the package structure fills a gap between a side of another portion of the lid and a side of the die. A method includes attaching a die to a multilevel package substrate with a first side of the die facing the multilevel package substrate and a second side facing away from the multilevel package substrate; positioning a lid on the multilevel package substrate with a first portion of the lid spaced apart from the second side of the die; and forming a package structure that encloses the die and a portion of the multilevel package substrate and fills a gap between the first portion of the lid and the second side of the die.

A semiconductor structure includes a substrate including a first surface, a second surface opposite to the first surface, a first sidewall substantially orthogonal to the first surface and the second surface; an isolation layer surrounding and contacted with the first sidewall of the substrate; a die disposed over the second surface of the substrate; a first conductive bump disposed at the first surface of the substrate; and a second conductive bump disposed between the substrate and the die.