Package assemblies including a die stack and related methods of use. The package assembly includes a substrate with a first surface, a second surface, and a third surface bordering a through-hole extending from the first surface to the second surface. The assembly further includes a die stack, a conductive layer, and a lid. The die stack includes a chip positioned inside the through-hole in the substrate. A section of the conductive layer is disposed on the third surface of the substrate. A portion of the lid is disposed between the first chip and the section of the conductive layer. The conductive layer is configured to be coupled with power, and the lid is configured to be coupled with ground. The portion of the lid may act as a first plate of a capacitor, and the section of the conductive layer may act as a second plate of the capacitor.

Stacked semiconductor die assemblies having memory dies stacked between partitioned logic dies and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a first logic die, a second logic die, and a thermally conductive casing defining an enclosure. The stack of memory dies can be disposed within the enclosure and between the first and second logic dies.

A semiconductor structure includes a substrate including a first surface, a second surface opposite to the first surface, a sidewall substantially orthogonal to the first surface and the second surface; and a metallic layer surrounding and connected with the sidewall of the substrate, wherein the metallic layer includes an exposed surface substantially level with the first or second surface of the substrate. Further, a method of manufacturing the semiconductor structure is also disclosed.

A semiconductor structure includes a substrate including a first surface, a second surface opposite to the first surface, a sidewall substantially orthogonal to the first surface and the second surface; and a metallic layer surrounding and connected with the sidewall of the substrate, wherein the metallic layer includes an exposed surface substantially level with the first or second surface of the substrate. Further, a method of manufacturing the semiconductor structure is also disclosed.

A method includes bonding a first plurality of device dies onto a wafer, wherein the wafer includes a second plurality of device dies, with each of the first plurality of device dies bonded to one of the second plurality of device dies. The wafer is then sawed to form a die stack, wherein the die stack includes a first device die from the first plurality of device dies and a second device die from the second plurality of device dies. The method further includes bonding the die stack over a package substrate.

A package structure for power devices includes a heat dissipation insulating substrate, a plurality of power devices, at least one conductive clip, and a heat dissipation baseplate. The heat dissipation insulating substrate has a first surface and a second surface opposite thereto, and the power devices form a bridge circuit topology and are disposed on the first surface, wherein active regions of at least one of the power devices are flip-chip bonded to the first surface. The conductive clip is configured to electrically connect at least one of the power devices to the first surface, and the heat dissipation baseplate is disposed at the second surface of the heat dissipation insulating substrate.

Disclosed is an electromagnetic wave absorbing heat conductive sheet having superior heat conductivity and electromagnetic wave absorbency. The electromagnetic wave absorbing heat conductive sheet comprises a polymer matrix component; a magnetic metal power; and a fibrous heat conductive filler oriented in one direction.

A semiconductor structure includes a substrate including a first surface, a second surface opposite to the first surface, a sidewall substantially orthogonal to the first surface and the second surface; and a metallic layer surrounding and connected with the sidewall of the substrate, wherein the metallic layer includes an exposed surface substantially level with the first or second surface of the substrate. Further, a method of manufacturing the semiconductor structure is also disclosed.

A semiconductor structure includes a substrate including a first surface, a second surface opposite to the first surface, a sidewall substantially orthogonal to the first surface and the second surface; and a metallic layer surrounding and connected with the sidewall of the substrate, wherein the metallic layer includes an exposed surface substantially level with the first or second surface of the substrate. Further, a method of manufacturing the semiconductor structure is also disclosed.

A method includes bonding a first plurality of device dies onto a wafer, wherein the wafer includes a second plurality of device dies, with each of the first plurality of device dies bonded to one of the second plurality of device dies. The wafer is then sawed to form a die stack, wherein the die stack includes a first device die from the first plurality of device dies and a second device die from the second plurality of device dies. The method further includes bonding the die stack over a package substrate.