Patent classifications
H01M4/0426
IN-BODY POWER SOURCE HAVING HIGH SURFACE AREA ELECTRODE
Power sources that enable in-body devices, such as implantable and ingestible devices, are provided. Aspects of the in-body power sources of the invention include a solid support, a first high surface area electrode and a second electrode. Embodiments of the in-power sources are configured to emit a detectable signal upon contact with a target physiological site. Also provided are methods of making and using the power sources of the invention.
In-body power source having high surface area electrode
Power sources that enable in-body devices, such as implantable and ingestible devices, are provided. Aspects of the in-body power sources of the invention include a solid support, a first high surface area electrode and a second electrode. Embodiments of the in-power sources are configured to emit a detectable signal upon contact with a target physiological site. Also provided are methods of making and using the power sources of the invention.
Two dimensional (2D) transition metal dichalcogenide (TMD) materials and alloys as catalysts for cathode in lithium sulfur (Li-S) batteries
Two-dimensional (2D) material-based metal or alloy catalysts synthesized on carbon materials (e.g., carbon nanotubes) prevent polysulfide shuttling and overcome technical challenges for developing practical lithium-sulfur (Li—S) batteries. Soluble lithium polysulfides (LiPSs) tend to shuttle during battery cycling and corrode a Li anode, leading to eventual performance fading in the Li—S battery. This shuttle effect can be reduced by accelerating the conversion of the dissolved polysulfides to the insoluble LiPSs and back to the sulfur. A 2D material-based alloy or 2D material synthesized on carbon materials can suppress polysulfide shuttling by catalyzing polysulfide reactions. 2D material-based alloys with 2H (semiconducting)—1T (metallic) mixed phase exhibit synergistic effects of accelerated electron transfer and catalytic performance as confirmed by the lower charge-transfer resistance of carbon nanotube (CNT)—S cathode and the high binding energy of LiPSs to the catalyst.
ANODE, BATTERY, AND METHOD OF MANUFACTURING SAME
A battery capable of improving cycle characteristics is provided. An anode active material layer is formed by forming a precursor layer containing active material particles containing Si and Li as an element, and then heating the resultant. Thereby, the active material particles are bound to each other by sintering or fusing, and united three-dimensionally. Since Li is contained therein, the active material particles can be sufficiently sintered even if the heating temperature is low, 600 deg C.
INTERPHASE LAYER FOR IMPROVED LITHIUM METAL CYCLING
Implementations described herein generally relate to metal electrodes, more specifically, lithium-containing anodes, high performance electrochemical devices, such as secondary batteries, including the aforementioned lithium-containing electrodes, and methods for fabricating the same. In one implementation, a rechargeable battery is provided. The rechargeable battery comprises a cathode film including a lithium transition metal oxide, a separator film coupled to the cathode film and capable of conducting ions, a solid electrolyte interphase film coupled to the separator, wherein the solid electrolyte interphase film is a lithium fluoride film or a lithium carbonate film, a lithium metal film coupled to the solid electrolyte interphase film and an anode current collector coupled to the lithium metal film.
ULTRA-STABLE SILICON ANODE BY THREE-DIMENSIONAL NANOARCHITECTURE DESIGN
An electrode includes an electrically conductive porous graphene core; a silicon layer disposed on an internal surface of the porous graphene core; and an ion-conductive hybrid silicate layer disposed on the silicon layer.
CONDUCTIVE FILM, FABRICATION METHOD OF CONDUCTIVE FILM, AND LITHIUM-ION BATTERY (LIB)
A conductive film, a fabrication method of the conductive film, and a lithium-ion battery (LIB) are provided. The fabrication method includes: S10: selecting a support layer, and plating a first metal layer on upper and lower surfaces of the support layer, respectively; S20: compounding a first film on a surface of one of the first metal layers, and compounding a second film on a surface of the other one of the first metal layers; S30: compounding a third film on surfaces of the first film and the second film, and etching a plurality of circular holes penetrating through the third film and the second film; S40: plating a second metal layer on an outer surface of the third film and an inner wall of the circular hole; S50: fabricating a composite film; and S60: plating a third metal layer on upper and lower surfaces of the composite film.
Microwave rapid thermal processing of electrochemical devices
Microwave radiation may be applied to electrochemical devices for rapid thermal processing (RTP) (including annealing, crystallizing, densifying, forming, etc.) of individual layers of the electrochemical devices, as well as device stacks, including bulk and thin film batteries and thin film electrochromic devices. A method of manufacturing an electrochemical device may comprise: depositing a layer of the electrochemical device over a substrate; and microwave annealing the layer, wherein the microwave annealing includes selecting annealing conditions with preferential microwave energy absorption in the layer. An apparatus for forming an electrochemical device may comprise: a first system to deposit an electrochemical device layer over a substrate; and a second system to microwave anneal the layer, wherein the second system is configured to provide preferential microwave energy absorption in the device layer.
Double-etch nanowire process
In an aspect of this disclosure, a method is provided comprising the steps of: (a) providing a silicon-containing substrate, (b) depositing a first metal on the substrate, (c) etching the substrate produced by step (b) using a first etch, and (d) etching the substrate produced by step (c) using a second etch, wherein the second etch is more aggressive towards the deposited metal than the first etch, wherein the result of step (d) comprises silicon nanowires. The method may further comprise, for example, steps (b1) subjecting the first metal to a treatment which causes it to agglomerate and (b2) depositing a second metal.
LITHIUM TITANATE STRUCTURES FOR LITHIUM ION BATTERIES FORMED USING ELEMENT SELECTIVE SPUTTERING
A method is provided in which a lithium titanate precursor structure is subjected to element selective sputtering to form a lithium titanate structure including a lithium titanate core and a conformal layer on the lithium titanate core, wherein the conformal layer includes titanium oxide. A method of preparing an electrode for a lithium ion battery, wherein the electrode includes lithium titanate structures, is also provided.