A system for generating a visible-to-mid-infrared frequency comb, including an all polarization-maintaining fiber-based frequency comb module and an optical frequency comb spectral expansion module. The all polarization-maintaining fiber-based frequency comb module is configured to generate a laser with evenly spaced and coherent frequencies and spectral lines. The optical frequency comb spectral expansion module is configured to perform spectral expansion on the laser to output the visible-to-mid-infrared frequency comb. The optical frequency comb spectral expansion module includes an amplifier, a 90:10 beam splitter, a first all polarization-maintaining compression fiber, a second all polarization-maintaining compression fiber, a 1100 nm-2350 nm supercontinuum unit and a 500 nm-1100 nm supercontinuum unit. A circuit of a semiconductor laser diode unit is configured to control output of the 1100 nm-2350 nm laser.

A chip-scale mode-locked laser including a cavity including a gain medium for amplifying signal electromagnetic radiation (signal) through stimulated emission, the signal comprising a signal wavelength; and a passive or active mode-locking device to enforce pulse formation in the laser. The mode-locking device includes a thin-film waveguide having a thickness on the order of the signal wavelength so as to confine and guide the signal along the thin-film waveguide, and a material comprising a second-order nonlinear susceptibility to enable active or passive mode-locking of the signal. The mode-locking device leads to generation of pulses of the signal outputted from the mode-locked laser.

A chip-scale mode-locked laser including a cavity including a gain medium for amplifying signal electromagnetic radiation (signal) through stimulated emission, the signal comprising a signal wavelength; and a passive or active mode-locking device to enforce pulse formation in the laser. The mode-locking device includes a thin-film waveguide having a thickness on the order of the signal wavelength so as to confine and guide the signal along the thin-film waveguide, and a material comprising a second-order nonlinear susceptibility to enable active or passive mode-locking of the signal. The mode-locking device leads to generation of pulses of the signal outputted from the mode-locked laser.

A fiber structure includes first and second optical fibers disposed such that tip portions thereof butt and a sheet-shaped saturable absorber sandwiched between the tip portion of the first optical fiber and the tip portion of the second optical fiber. Each of the tip portions of the first optical fiber and the second optical fiber has a core, a cladding provided around the core, and a ferrule provided around the cladding. The tip portion of the first optical fiber has a protruding shape protruding to a tip side. The saturable absorber has an adhering part at least adhering to the core of the first optical fiber and a non-adhering part present around the adhering part and not adhering to the tip portion of the first optical fiber.

A mid-infrared semiconductor saturable absorber mirror based on InAs/GaSb superlattice comprises a GaSb substrate with an anti-reflection film coated on the lower surface of the GaSb substrate; InAs/GaSb superlattice which has a specific structure and thickness and is arranged on the GaSb substrate; and Bragg reflection film which is arranged on the InAs/GaSb superlattice, wherein Bragg reflection film is composed of multiple pairs of ZnS and YbF.sub.3 film layers with a thickness of wavelength, and the YbF.sub.3 film layer is connected with the InAs/GaSb superlattice. The device not only has a mid-infrared working range with a broadband operation bandwidth, but also has the advantages of designable parameters, outstanding robustness, high damage threshold and the like, and sets a foundation for the development of mid-infrared ultrafast mode-locked lasers.

A mid-infrared semiconductor saturable absorber mirror based on InAs/GaSb superlattice comprises a GaSb substrate with an anti-reflection film coated on the lower surface of the GaSb substrate; InAs/GaSb superlattice which has a specific structure and thickness and is arranged on the GaSb substrate; and Bragg reflection film which is arranged on the InAs/GaSb superlattice, wherein Bragg reflection film is composed of multiple pairs of ZnS and YbF.sub.3 film layers with a thickness of wavelength, and the YbF.sub.3 film layer is connected with the InAs/GaSb superlattice. The device not only has a mid-infrared working range with a broadband operation bandwidth, but also has the advantages of designable parameters, outstanding robustness, high damage threshold and the like, and sets a foundation for the development of mid-infrared ultrafast mode-locked lasers.

A chip-scale mode-locked laser including a cavity including a gain medium for amplifying signal electromagnetic radiation (signal) through stimulated emission, the signal comprising a signal wavelength; and a passive or active mode-locking device to enforce pulse formation in the laser. The mode-locking device includes a thin-film waveguide having a thickness on the order of the signal wavelength so as to confine and guide the signal along the thin-film waveguide, and a material comprising a second-order nonlinear susceptibility to enable active or passive mode-locking of the signal. The mode-locking device leads to generation of pulses of the signal outputted from the mode-locked laser.

A chip-scale mode-locked laser including a cavity including a gain medium for amplifying signal electromagnetic radiation (signal) through stimulated emission, the signal comprising a signal wavelength; and a passive or active mode-locking device to enforce pulse formation in the laser. The mode-locking device includes a thin-film waveguide having a thickness on the order of the signal wavelength so as to confine and guide the signal along the thin-film waveguide, and a material comprising a second-order nonlinear susceptibility to enable active or passive mode-locking of the signal. The mode-locking device leads to generation of pulses of the signal outputted from the mode-locked laser.

A radiation field generating system comprising an optical unit with an optical assembly which defines an optical path is provided, wherein the optical unit is operable in several different operation conditions and the optical assembly comprises at least one optical switching component with which switching between at least two different operation conditions of the several operation conditions can be performed.

A radiation field generating system comprising an optical unit with an optical assembly which defines an optical path is provided, wherein the optical unit is operable in several different operation conditions and the optical assembly comprises at least one optical switching component with which switching between at least two different operation conditions of the several operation conditions can be performed.