A surface emitting laser module includes a base substrate, a surface emitting laser substrate mounted on the base substrate, the surface emitting laser substrate including a surface emitting laser element, and the surface emitting laser substrate having a first face facing the base substrate and a second face facing away from the base substrate, and an optical member facing the second face and including an optical element configured to receive light emitted from the second face of the surface emitting laser element. The surface emitting laser element includes a first semiconductor layer, a second semiconductor layer, a first electrode provided on the first face and connected to the first semiconductor layer, and a second electrode provided on the first face and connected to the second semiconductor layer. The base substrate includes a third electrode connected to the first electrode and a fourth electrode connected to the second electrode.

A Vertical Cavity Surface Emitting Laser (VCSEL) includes a layer stack of semiconductor layers having a first layer sub-stack forming a mesa, and a second layer sub-stack adjacent to the mesa in a stacking direction. Layers of the second layer sub-stack extend beyond layers of the first sub-stack in a direction perpendicular to the stacking direction. The semiconductor layers of the layer stack form an optical resonator having a first mirror, a second mirror, an active region between the first and second mirrors for laser light generation, and an oxide aperture layer forming a current aperture. The oxide aperture layer is made from Al.sub.1-xGa.sub.xAs with 0≤x≤0.05. The oxide aperture layer is a last layer of the mesa and immediately adjacent to a first layer of the second layer sub-stack. A first layer of the second layer sub-stack is a contact layer.

In some implementations, a surface emitting laser may have an emitter design with a short oxidation length and/or a large number of trenches. For example, the surface emitting laser may comprise a metallization layer comprising multiple extended portions extending outwards from a circumference of an inner ring portion, and multiple tabs extending laterally from the multiple extended portions in a partial ring shape. The surface emitting laser may further comprise multiple via openings connecting the metallization layer to a plating metal, where each via opening is positioned over a corresponding tab, of the multiple tabs. The surface emitting laser may comprise multiple oxidation trenches that are each formed in an angular gap between a pair of extended portions, of the multiple extended portions, such that the multiple tabs and the multiple via openings are exclusively outside outer radii of the multiple oxidation trenches.

Disclosed herein are various embodiments for high performance wireless data transfers. In an example embodiment, laser chips are used to support the data transfers using laser signals that encode the data to be transferred. The laser chip can be configured to (1) receive a digital signal and (2) responsive to the received digital signal, generate and emit a variable laser signal, wherein the laser chip comprises a laser-emitting epitaxial structure, wherein the laser-emitting epitaxial structure comprises a plurality of laser-emitting regions within a single mesa structure that generate the variable laser signal. Also disclosed are a number of embodiments for a photonics receiver that can receive and digitize the laser signals produced by the laser chips. Such technology can be used to wireless transfer large data sets such as lidar point clouds at high data rates.

A corrected mesa structure for a VCSEL device is particularly configured to compensate for variations in the shape of the created oxide aperture that result from anisotropic oxidation. In particular, a corrected mesa shape is derived by determining the shape of an as-created aperture formed by oxidizing a circular mesa structure, and then ascertaining the compensation required to convert the as-created shape into a desired (“target”) shaped aperture opening. The compensation value is then used to modify the shape of the mesa itself such that a following anisotropic oxidation yields a target-shaped oxide aperture.

A vertical-cavity surface-emitting laser (VCSEL) is provided. The VCSEL includes a mesa structure disposed on a substrate. The mesa structure includes a first reflector, a second reflector, and an active cavity material structure disposed between the first and second reflectors. The second reflector has an opening extending from a second surface of the second reflector into the second reflector by a predetermined depth. Etching into the second reflector to the predetermined depth reduces the photon lifetime and the threshold gain of the VCSEL, while increasing the modulation bandwidth and maintaining the high reflectivity of the second reflector. Thus, etching the second reflector to the predetermined depth provides an improvement in overshoot control, broader modulation bandwidth, and faster pulsing of the VCSEL such that the VCSEL may provide a high speed, high bandwidth signal with controlled overshoot.

An optical device includes: a first reflector; a second reflector facing the reflector; a light emitter between the first reflector and the second reflector; a base supporting the second reflector with space between the light emitter and the second reflector; a piezoelectric body configured to, in response to application of drive voltage, deform to cause the second region to deform to drive the second reflector so as to change a distance between the first reflector and the second reflector. The base has a first region and a second region having a lower stiffness than the first region. The second region has the second reflector and the piezoelectric body thereon. The optical device is configured to emit a laser beam whose wavelength is changeable with the distance between the first reflector and the second reflector.

A structure of thermal stress release of photo-excited thermal infrared emitter includes a substrate, a VCSEL unit, a frame, and a layered structure. The VCSEL unit has a small emission angle disposed on a portion of the substrate. The frame is disposed on the substrate, and has an interior side wall inclinedly extended upwardly to form a cavity in which the portion of the substrate is to be exposed. The layered structure is above the VCSEL unit and includes a first light-transparent passivation layer, a light absorbing and thermal infrared emitting layer, and a second light-transparent passivation layer formed in sequence for chemical protection. The light absorbing and thermal infrared emitting absorbs light emitted from the VCSEL unit to generate infrared radiation, and has a layout geometry of reticulated mosaic size such that thermal expansion mismatch and induced stress are minimized without accumulation due to small reticulated mosaic size.

A surface emitting laser includes a substrate, a mesa of semiconductor layers including a lower reflector layer, an active layer, an upper reflector layer, and an upper contact layer that are successively laminated on the substrate, and an electrode provided on the upper contact layer. The upper contact layer includes GaAs. The electrode includes an alloy layer including Pt, in contact with the upper contact layer.

In some implementations, a vertical cavity surface emitting laser (VCSEL) device may include a substrate layer and a set of epitaxial layers disposed on the substrate layer. The set of epitaxial layers may include a first mirror and a second mirror. At least one of the first mirror or the second mirror may include at least one reflector pair that includes a semiconductor material layer and an oxidized semiconductor material layer. The set of epitaxial layers may include an oxidation trench axially extending into at least the second mirror, an active region between the first mirror and the second mirror, and an oxidation layer with an oxidation aperture.