Provided is an external cavity laser (ECL) including a vertical cavity surface emitting laser (VCSEL)-Distributed Bragg Reflector (DBR) type light emitting unit configured to receive a current and emit light, and including a DBR function layer and an active layer for a quantum well formed on one side of this DBR function layer, and an optical circuit unit including a light guide in which one end surface is installed to face an active layer at one side of the active layer, light generated from the active layer is received and guided, and an optical axis is formed vertically to an active layer plane, a reflection pattern that is formed at one side of the light guide so as to receive light output from the other end of the light guide to reflect the light again to the light guide, and an external layer for surrounding the light guide and the reflection pattern, wherein the VCSEL-DBR type light emitting unit and the optical circuit unit are mutually coupled to each other. An optical coupling efficiency in the ECL may be raised by improving an inefficient optical coupling issue including alignment, reflection, and the like in a coupling part of a gain element and a silicon waveguide.

A VCSEL device includes a first electrical contact, a substrate, a second electrical contact, and an optical resonator arranged on a first side of the substrate. The optical resonator includes a first reflecting structure comprising a first distributed Bragg reflector, a second reflecting structure comprising a second distributed Bragg reflector, an active layer arranged between the first and second reflecting structures, and a guiding structure. The guiding structure is configured to define a first relative intensity maximum of an intensity distribution within the active layer at a first lateral position such that a first light emitting area is provided, to define at least a second relative intensity maximum of the intensity distribution within the active layer at a second lateral position such that a second light emitting area is provided, and to reduce an intensity in between the at least two light-emitting areas during operation.

A semiconductor vertical light source includes upper and lower minors with an active region in between, an inner mode confinement region, and an outer current blocking region that includes a common epitaxial layer including an epitaxially regrown interface between the active region and upper minor. A conducting channel including acceptors is in the inner mode confinement region. The current blocking region includes a first impurity doped region with donors between the epitaxially regrown interface and active region, and a second impurity doped region with acceptors between the first doped region and lower minor. The outer current blocking region provides a PNPN current blocking region that includes the upper minor or a p-type layer, first doped region, second doped region, and lower minor or an n-type layer. The first and second impurity doped region force current flow into the conducting channel during normal operation of the light source.

A vertical cavity surface emitting laser (VCSEL) has first and second electrical contacts, and an optical resonator. The optical resonator has first and second distributed Bragg reflectors (DBRs), an active layer, a distributed heterojunction bipolar phototransistor (DHBP), and an optical guide. The DHBP has a collector layer, light sensitive layer; a base layer; and an emitter layer. There is an optical coupling between the active layer and the DHBP for providing an active carrier confinement by the DHBP. The optical guide guides an optical mode within the optical resonator during operation. The optical guide is outside a current flow which can be provided by the first and second electrical contacts during operation of the VCSEL. The optical guide is outside a layer sequence between the first and second electrical contacts in the vertical direction of the VCSEL. The optical guide has an oxide aperture arranged in the second DBR.

A light modulation element according to example embodiments includes a substrate; a first lower DBR layer on the substrate including a first material layer alternately stacked with a second material layer having a different refractive index from the first material layer; a second lower DBR layer on the first lower DBR layer with a surface area less than the first lower DBR layer and including a third material layer alternately stacked with a fourth material layer having a different refractive index from the third material layer; an active layer on the second lower DBR layer, including a semiconductor material having a multi-quantum well structure and having a refractive index that varies according to an applied voltage; and an upper DBR layer on the active layer including a fifth material layer alternately stacked with a sixth material layer having a different refractive index from the fifth material layer.

An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

The present embodiment relates to a semiconductor light emitting element having a structure that enables removal of zero-order light from output light of an S-iPM laser. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a base layer and a plurality of modified refractive index regions each of which is individually arranged at a specific position. One of the pair of cladding layers includes a distributed Bragg reflector layer which has a transmission characteristic with respect to a specific optical image outputted along an inclined direction with respect to a light emission surface and has a reflection characteristic with respect to the zero-order light outputted along a normal direction of the light emission surface.

The invention describes a laser device comprising between two and six mesas (120) provided on one semiconductor chip (110), wherein the mesas (120) are electrically connected in parallel such that the mesas (120) are adapted to emit laser light if a defined threshold voltage is provided to the mesas (120). Two to six mesas (120) with reduced active diameter in comparison to a laser device with one mesa improve the yield and performance despite of the fact that two to six mesas need more area on the semiconductor chip thus increasing the total size of the semiconductor chip (110). The invention further describes a method of marking semiconductor chips (110). A functional layer of the semiconductor chip (110) is provided and structured in a way that a single semiconductor chip (110) can be uniquely identified by means of optical detection of the structured functional layer. The structured layer enables identification of small semiconductor chips (110) with a size below 200 m200 m.

An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

The present invention relates to a vertical cavity surface emitting laser (VCSEL) and a manufacturing method thereof, and more specifically, to a high-efficiency oxidized vertical cavity surface emitting laser for emitting laser light having a peak wavelength of 860 nm, and a manufacturing method thereof. The vertical cavity surface emitting laser according to the present invention includes a current diffusion layer having a high doping region at least in a portion between an upper electrode and a lower distributed Bragg reflector.