An SAW resonator includes a piezoelectric substrate, an IDT electrode, and a pair of reflectors. The IDT electrode includes pluralities of electrode fingers which are aligned on the piezoelectric substrate in a direction of propagation of a SAW. The pair of reflectors are located on the two sides of the pluralities of electrode fingers on the piezoelectric substrate in the direction of propagation. The IDT electrode includes a plurality of areas which includes pluralities of electrode fingers distributed to them and have different resonance frequencies from each other. The plurality of areas include at least three areas. The second highest resonance frequency among all areas is lower than an intermediate value between the lowest resonance frequency among all areas and the highest resonance frequency among all areas.

An elastic wave device includes a longitudinally-coupled resonator surface acoustic wave filter including first to third IDTs and a parallel trap including a surface acoustic wave resonator. The longitudinally-coupled resonator surface acoustic wave filter is asymmetric with respect to a central axis of the second IDT, the central axis extending in a direction perpendicular or substantially perpendicular to the elastic-wave propagation direction on the piezoelectric substrate. When the duty ratio of an IDT of the surface acoustic wave resonator is denoted by D0 and the duty ratios of the first to third IDTs are respectively denoted by D1 to D3, the duty ratio D0 is between the highest of the duty ratios D1 to D3 and the lowest of the duty ratios D1 to D3.

A band elimination filter includes a plurality of parallel resonators, each including a piezoelectric substrate and an IDT electrode on a surface of the piezoelectric substrate. The IDT electrode includes a pair of comb-shaped electrodes opposing each other, and the IDT electrode includes electrode fingers, a pitch of the electrode fingers being different between an end portion of the IDT electrode in a propagation direction of an elastic wave and a central portion of the IDT electrode different from the end portion.

An acoustic wave resonator includes: a piezoelectric substrate; and an interdigital transducer (IDT) located on the piezoelectric substrate, the IDT including a pair of comb-shaped electrodes having a plurality of electrode fingers and a bus bar to which the plurality of electrode fingers are coupled, the IDT having: a first region in which a pitch of electrode fingers is substantially constant; a second region in which a pitch of electrode fingers decreases at closer distances to an outer side; and a third region in which a pitch of electrode fingers increases at closer distances to an outer side, the second region being located outside the first region in an arrangement direction of the plurality of electrode fingers, and the third region being located outside the second region in the arrangement direction.

In a resonator, two interdigital transducers (W1,W2) are electrically series-connected and arranged next to each other in the longitudinal direction within an acoustic track delimited by reflectors. Between the two interdigital transducers, a transition area (UEB) is formed in that the finger period p, which is defined as the distance between the finger centers of adjacent transducer fingers, is higher in comparison to the remaining interdigital transducer.

Provided is a method for manufacturing a surface acoustic wave apparatus that can reduce degradation of electric characteristics and also reduce the number of manufacturing processes. The method for manufacturing a surface acoustic wave apparatus includes the steps of: forming an IDT electrode on an upper surface of a piezoelectric substrate, forming a frame member surrounding a formation area in which the IDT electrode is formed on the piezoelectric substrate, and mounting a film-shaped lid member on the upper surface of the frame member so as to be joined to the frame member so that a protective cover, used for covering the formation area and for providing a tightly-closed space between it and the formation area, is formed.

A surface acoustic wave resonator includes one IDT electrode and reflectors. When a distance between an electrode finger Fe(k) and an electrode finger Fe(k+1) is defined as a k-th electrode finger pitch, in an electrode finger Fe(k1), the electrode finger Fe(k), and the electrode finger Fe(k+1), a value obtained by dividing a difference between the electrode finger pitch and a section average electrode finger pitch, which is an average of the electrode finger pitch and the electrode finger pitch, by an overall average electrode finger pitch is defined as a pitch deviation ratio, and a distribution obtained by calculating the pitch deviation ratio for all electrode fingers of the IDT electrode or the reflectors is defined as a histogram of the pitch deviation ratio, the IDT electrode or the reflectors have a standard deviation of the pitch deviation ratio in the histogram larger than or equal to about 0.2%.

A surface acoustic wave device of a ladder type includes a series resonator and a parallel resonator, in which the parallel resonator includes a first reflector, a second reflector, and a comb-shaped electrode located between the first reflector and the second reflector, and the comb-shaped electrode includes a first section in which electrode fingers are formed at a constant cycle, and a second section in which electrode fingers are partially formed at a constant cycle different from the cycle of the first section.

A surface acoustic wave resonator that has at least a first resonant frequency and a second resonant frequency is disclosed. The surface acoustic wave resonator can include an interdigital transducer electrode that is positioned over a piezoelectric layer. The interdigital transducer electrode includes fingers having a first pitch. The surface acoustic wave resonator can also include a first set of reflectors that is positioned over the piezoelectric layer. The first set of reflectors includes a first number of reflectors having a second pitch. The first pitch is greater than the second pitch. The surface acoustic wave resonator can also include a second set of reflectors that is positioned over the piezoelectric layer. The second set of reflectors includes a second number of reflectors having a third pitch. The second number of reflectors is different from the first number of reflectors.

An elastic wave device includes a longitudinally-coupled resonator surface acoustic wave filter including first to third IDTs and a parallel trap including a surface acoustic wave resonator. The longitudinally-coupled resonator surface acoustic wave filter is asymmetric with respect to a central axis of the second IDT, the central axis extending in a direction perpendicular or substantially perpendicular to the elastic-wave propagation direction on the piezoelectric substrate. When the duty ratio of an IDT of the surface acoustic wave resonator is denoted by D0 and the duty ratios of the first to third IDTs are respectively denoted by D1 to D3, the duty ratio D0 is between the highest of the duty ratios D1 to D3 and the lowest of the duty ratios D1 to D3.