A piezoelectric thin film resonator includes: a piezoelectric film located on a substrate; lower and upper electrodes facing each other across a part of the piezoelectric film; and an insertion film located between the lower and upper electrodes, located in a part of an outer peripheral region within a resonance region where the lower and upper electrodes face each other across the piezoelectric film, and not located in a center region of the resonance region, a first width in the resonance region of the insertion film in a first region, where the upper electrode is extracted from the resonance region, being greater than a third width in the resonance region in a third region other than a second region, where the lower electrode is extracted from the resonance region, and the first region, a second width in the resonance region in a second region being the third width or greater.

A notch filter includes a first inductor coupled between an input node and an output node, a dual-resonator structure coupled between the input node and the output node, and a second inductor coupled between the dual-resonator structure and ground, and a bandpass filter includes a capacitor coupled between an input node and an output node, and a dual-resonator structure coupled between the input node, the output node, and ground.

Embodiments of the invention include a piezoelectric package integrated filtering device that includes a film stack. In one example, the film stack includes a first electrode, a piezoelectric material in contact with the first electrode, and a second electrode in contact with the piezoelectric material. The film stack is suspended with respect to a cavity of an organic substrate having organic material and the film stack generates an acoustic wave to be propagated across the film stack in response to an application of an electrical signal between the first and second electrodes.

A bulk acoustic wave (BAW) resonator is disclosed. The BAW resonator includes: a lower electrode; a piezoelectric layer disposed over the lower electrode; and an upper electrode over the piezoelectric layer. An opening having a first area exists in and extends completely through the upper electrode. The BAW resonator also includes a substrate disposed below the lower electrode; a cavity; and a pillar disposed in the cavity and extending to contact a portion of the lower electrode disposed beneath the opening. The pillar has a second area that is less than the first area. There are no electrical connections that extend across the opening from one side to another.

An acoustic resonator that prevents a radio frequency (RF) signal from being coupled to a cap substrate. An electronic device includes a first substrate (device substrate) of piezoelectric material having a top surface on which an electronic circuit including a film bulk acoustic resonator is formed, a second substrate (cap substrate) of low-resistivity material, a bottom surface of which is disposed opposing the top surface of the first substrate, and a side wall disposed between the top surface of the first substrate and the bottom surface of the second substrate. The side wall defines a cavity together with the top surface of the first substrate and the bottom surface of the second substrate, the cavity internally including the electronic circuit. A thin film of high-resistivity material is formed on at least a portion of the bottom surface of the second substrate to prevent an RF signal emitted from the electronic circuit from being coupled to the second substrate.

In accordance with an embodiment, a method of operating an RF system includes filtering a wideband RF signal using an adjustable center frequency bandpass filter to produce a filtered RF signal; amplifying the filtered RF signal to produce an amplified RF signal; and band stop filtering the amplified RF signal to produce a band stopped RF signal.

Of a plurality of acoustic wave resonators, the acoustic wave resonator electrically closest to a first terminal is an antenna end resonator, the antenna end resonator is a first acoustic wave resonator and at least one acoustic wave resonator other than the antenna end resonator of the plurality of acoustic wave resonators is a second acoustic wave resonator. An acoustic wave device satisfies a first condition. The first condition is a condition that a high acoustic velocity layer of the first acoustic wave resonator and a high acoustic velocity layer of the second acoustic wave resonator each include a silicon substrate, a surface closer to a piezoelectric layer in the silicon substrate of the first acoustic wave resonator is a plane or a plane, and a surface closer to a piezoelectric layer in the silicon substrate of the second acoustic wave resonator is a plane.

The present invention provides tunable film bulk acoustic resonators (FBARs) with the resonant frequency of the acoustic wave to be excited and to be transmitted tuned by digital to analog converters which convert an input digital signal to an output DC voltage and provide DC bias voltages to the FBARs through integrated thin film biasing resistors. The polarity and the value of the output DC voltage are controlled by the input digital signal to achieve selection and tuning of the resonant frequency of the FBARs. A plurality of the tunable FBARs are connected to form microwave filters with tunable bandpass frequencies and oscillators with selectable resonating frequencies by varying the input digital signals applied to the digital to analog converters.

A method of fabricating an FBAR filter device including an array of resonators, each resonator comprising a single crystal piezoelectric film sandwiched between a first metal electrode and a second metal electrode, wherein the first electrode is supported by a support membrane over an air cavity, the air cavity embedded in a silicon dioxide layer over a silicon handle, with through-silicon via holes through the silicon handle and into the air cavity, the side walls of said air cavity in the silicon dioxide layer being defined by perimeter trenches that are resistant to a silicon oxide etchant.

Embodiments of this disclosure relate to acoustic wave filters configured to filter radio frequency signals. An acoustic wave filter includes a first bulk acoustic wave resonator on a substrate, a second bulk acoustic wave resonator on the substrate, a conductor electrically connecting the first bulk acoustic wave resonator in anti-series with the second bulk acoustic wave resonator, and an air gap positioned between the conductor and a surface of the substrate. The air gap can reduce parasitic capacitance associated with the conductor. Acoustic wave filters disclosed herein can suppress a second harmonic.