Disclosed is a semiconductor device including a substrate with first and second regions adjacent to each other in a first direction, and first to third gate electrodes extending from the first region toward the second region. Each of the first and second regions includes a PMOSFET region and an NMOSFET region. The first to third gate electrodes extend in the first direction and are sequentially arranged in a second direction different from the first direction. The first and third gate electrodes are supplied with a first signal. The second gate electrode is supplied with a second signal that is an inverted signal of the first signal. The first gate electrode includes a first gate of the first region and a first gate of the second region. The first gates are aligned and connected with each other in the first direction.

A semiconductor device that retains a state of a data storage element during a power reduction mode including supply rails and voltages, and a storage latch and a retention latch both powered by retention supply voltage that remains energized during a power reduction mode. The storage latch and the retention latch are both coupled to a retention node that is toggled between first and second states before entering the power reduction mode. The toggling causes the storage latch to latch the state of the data storage element during the normal mode, and the retention node enables the storage element to hold the state during the power reduction mode. The retention latch includes a retention transistor and a retention inverter powered by the retention supply voltage. The retention inverter keeps the retention transistor turned on and the retention transistor holds the state of the retention node during the power reduction mode.

A semiconductor device that retains a state of a data storage element during a power reduction mode including supply rails and voltages, and a storage latch and a retention latch both powered by retention supply voltage that remains energized during a power reduction mode. The storage latch and the retention latch are both coupled to a retention node that is toggled between first and second states before entering the power reduction mode. The toggling causes the storage latch to latch the state of the data storage element during the normal mode, and the retention node enables the storage element to hold the state during the power reduction mode. The retention latch includes a retention transistor and a retention inverter powered by the retention supply voltage. The retention inverter keeps the retention transistor turned on and the retention transistor holds the state of the retention node during the power reduction mode.

The disclosure provides a flip-flop. The flip-flop includes a master latch. The master latch receives a flip-flop input, a clock input, an inverted clock input, an enable signal and an inverted enable signal. A slave latch is coupled to the master latch and receives the enable signal and the inverted enable signal. An output inverter is coupled to the slave latch and generates a flip-flop output.

A method of forming a semiconductor device includes forming active regions, forming S/D regions, forming MD contact structures and forming gate lines resulting in corresponding transistors that define a first time delay circuit having a first input configured to receive a first clock signal and having a first output configured to generate a second clock signal from the first clock signal; and corresponding transistors that define a second time delay circuit having a second input configured to receive the second clock signal and having a second output configured to generate a third clock signal from the first clock signal; forming a first gate via-connector in direct contact with the first gate line atop the first-type active region in the first area; and forming a second gate via-connector in direct contact with the second gate line atop the second-type active region in the second area.

A method of forming a semiconductor device includes forming active regions, forming S/D regions, forming MD contact structures and forming gate lines resulting in corresponding transistors that define a first time delay circuit having a first input configured to receive a first clock signal and having a first output configured to generate a second clock signal from the first clock signal; and corresponding transistors that define a second time delay circuit having a second input configured to receive the second clock signal and having a second output configured to generate a third clock signal from the first clock signal; forming a first gate via-connector in direct contact with the first gate line atop the first-type active region in the first area; and forming a second gate via-connector in direct contact with the second gate line atop the second-type active region in the second area.

To provide a novel nonvolatile latch circuit and a semiconductor device using the nonvolatile latch circuit, a nonvolatile latch circuit includes a latch portion having a loop structure where an output of a first element is electrically connected to an input of a second element, and an output of the second element is electrically connected to an input of the first element; and a data holding portion for holding data of the latch portion. In the data holding portion, a transistor using an oxide semiconductor as a semiconductor material for forming a channel formation region is used as a switching element. In addition, an inverter electrically connected to a source electrode or a drain electrode of the transistor is included. With the transistor, data held in the latch portion can be written into a gate capacitor of the inverter or a capacitor which is separately provided.

Circuits and a corresponding method are used to eliminate or greatly reduce SET induced glitch propagation in a radiation hardened integrated circuit. A clock distribution circuit and an integrated circuit portioning can be radiation hardened using one or two latch circuits interspersed through the integrated circuit, each having two or four latch stages.

Circuits and a corresponding method are used to eliminate or greatly reduce SET induced glitch propagation in a radiation hardened integrated circuit. A clock distribution circuit and an integrated circuit portioning can be radiation hardened using one or two latch circuits interspersed through the integrated circuit, each having two or four latch stages.

A semiconductor device that retains a state of a data storage element during a power reduction mode including supply rails and voltages, and a storage latch and a retention latch both powered by retention supply voltage that remains energized during a power reduction mode. The storage latch and the retention latch are both coupled to a retention node that is toggled between first and second states before entering the power reduction mode. The toggling causes the storage latch to latch the state of the data storage element during the normal mode, and the retention node enables the storage element to hold the state during the power reduction mode. The retention latch includes a retention transistor and a retention inverter powered by the retention supply voltage. The retention inverter keeps the retention transistor turned on and the retention transistor holds the state of the retention node during the power reduction mode.