A semiconductor device that retains a state of a data storage element during a power reduction mode including supply rails and voltages, and a storage latch and a retention latch both powered by retention supply voltage that remains energized during a power reduction mode. The storage latch and the retention latch are both coupled to a retention node that is toggled between first and second states before entering the power reduction mode. The toggling causes the storage latch to latch the state of the data storage element during the normal mode, and the retention node enables the storage element to hold the state during the power reduction mode. The retention latch includes a retention transistor and a retention inverter powered by the retention supply voltage. The retention inverter keeps the retention transistor turned on and the retention transistor holds the state of the retention node during the power reduction mode.

A flip-flop circuit configured to latch an input signal to an output signal is disclosed. The circuit includes a first latch circuit; and a second latch circuit coupled to the first latch circuit. In some embodiments, in response to a clock signal, the first and second latch circuits are complementarily activated so as to latch the input signal to the output signal, and the first and second latch circuits each comprises at most two transistors configured to receive the clock signal.

A flip-flop circuit configured to latch an input signal to an output signal is disclosed. The circuit includes a first latch circuit; and a second latch circuit coupled to the first latch circuit. In some embodiments, in response to a clock signal, the first and second latch circuits are complementarily activated so as to latch the input signal to the output signal, and the first and second latch circuits each comprises at most two transistors configured to receive the clock signal.

An electronic device includes: a clock booster configured to generate a boosted intermediate voltage greater than a source voltage, wherein the clock booster includes: a controller capacitor configured to store energy for providing a gate signal, wherein the gate signal is for controlling charging operations to generate the boosted intermediate voltage based on the source voltage, and a booster capacitor configured to store energy according to the gate signal for providing the boosted intermediate voltage, wherein the booster capacitor has greater capacitance level than the controller capacitor; and a secondary booster operatively coupled to the clock booster, the secondary booster configured to generate an output voltage based on the boosted intermediate voltage, wherein the output voltage is greater than both the source voltage and the boosted intermediate voltage.

The disclosed pulsed latched circuitry includes first and second latch circuits. The first and second latch circuits can be provided with additional logic circuit components to permit them to be operated as a flip-flop circuit, or as a FIFO circuit with a depth of two.

The disclosed pulsed latched circuitry includes first and second latch circuits. The first and second latch circuits can be provided with additional logic circuit components to permit them to be operated as a flip-flop circuit, or as a FIFO circuit with a depth of two.

A state retention circuit for retaining the state of a data storage element during a power reduction mode including a storage latch and a retention latch both powered by retention supply voltage that remains energized during a power reduction mode. The storage latch and the retention latch are both coupled to a retention node that is toggled from between first and second states before entering the power reduction mode so that the storage latch latches the state of the data storage element. The retention latch includes a retention transistor and a retention inverter powered by the retention supply voltage. The retention transistor is overpowered when the retention node is pulled to the second state in which the retention inverter quickly turns off the retention transistor. When the retention node is toggled back to the first state, the retention inverter keeps the retention transistor turned on during the power reduction mode.

A state retention circuit for retaining the state of a data storage element during a power reduction mode including a storage latch and a retention latch both powered by retention supply voltage that remains energized during a power reduction mode. The storage latch and the retention latch are both coupled to a retention node that is toggled from between first and second states before entering the power reduction mode so that the storage latch latches the state of the data storage element. The retention latch includes a retention transistor and a retention inverter powered by the retention supply voltage. The retention transistor is overpowered when the retention node is pulled to the second state in which the retention inverter quickly turns off the retention transistor. When the retention node is toggled back to the first state, the retention inverter keeps the retention transistor turned on during the power reduction mode.

A flip-flop circuit configured to latch an input signal to an output signal is disclosed. The circuit includes a first latch circuit; and a second latch circuit coupled to the first latch circuit. In some embodiments, in response to a clock signal, the first and second latch circuits are complementarily activated so as to latch the input signal to the output signal, and the first and second latch circuits each comprises at most two transistors configured to receive the clock signal.

A flip-flop circuit configured to latch an input signal to an output signal is disclosed. The circuit includes a first latch circuit; and a second latch circuit coupled to the first latch circuit. In some embodiments, in response to a clock signal, the first and second latch circuits are complementarily activated so as to latch the input signal to the output signal, and the first and second latch circuits each comprises at most two transistors configured to receive the clock signal.