A method includes: selectively generating a first current by a first current generating circuit according to a first control signal; generating a second current by a second current generating circuit; and comparing a first input signal and a second input signal at a common node to generate an output signal according to the first current, the second current, and a second control signal. The second control signal and the first control signal are in-phase with each other.

A clock gating cell is provided. The clock gating cell includes an input stage and an output stage. The input stage receives a first clock signal and at least one input enable signal and generates a first enable signal corresponding to one of the least one input enable signal according to the first clock signal. The output stage is coupled to the input stage. The output stage receives the first enable signal and the first clock signal and generates a clock gating signal according to the first enable signal and the first clock signal. The input stage operates based on a first voltage threshold, and the output stage operates based on a second voltage threshold. The first voltage threshold is different from the second voltage threshold.

A synchronization circuit includes a precharge circuit and a signal driving circuit. The precharge circuit precharges an output node to a first logic level. The signal driving circuit detects, in synchronization with a second dock signal having a phase leading a first clock signal, a logic level of an input signal and drives, in synchronization with the first clock signal, the output node to a second logic level according to the logic level of the input signal.

A semiconductor circuit includes a first circuit and a second circuit. The first circuit is configured to generate a voltage level at a first node based on a voltage level of input data, an inverted value of the voltage level at the first node, a voltage level of a clock signal, and a voltage level at a second node; and the second circuit is configured to generate the voltage level at the second node based on the voltage level of input data, an inverted value of the voltage level at the second node, the voltage level of the clock signal, and the inverted value of the voltage level at the first node. When the clock signal is at a first level, the first and second nodes have different logical levels. When the clock signal is at a second level, the first and second nodes have the same logical level.

There is disclosed herein multiplexer circuitry. In particular, there is disclosed a latch circuit for use as a multiplexer to multiplex information carried by respective pairs of input information signals onto an output information signal, each pair of input information signals comprising a first input information signal and a second input information signal, and each pair of input information signals carrying information values based on signal values of those input information signals and interleaved with information values carried by the other pair or pairs of input information signals.

A new family of shared clock single-edge triggered flip-flops that reduces a number of internal clock devices from 8 to 6 devices to reduce clock power. The static pass-gate master-slave flip-flop has no performance penalty compared to the flip-flops with 8 clock devices thus enabling significant power reduction. The flip-flop intelligently maintains the same polarity between the master and slave stages which enables the sharing of the master tristate and slave state feedback clock devices without risk of charge sharing across all combinations of clock and data toggling. Because of this, the state of the flip-flop remains undisturbed, and is robust across charge sharing noise. A multi-bit time borrowing internal stitched flip-flop is also described, which enables internal stitching of scan in a high performance time-borrowing flip-flop without incurring increase in layout area.

Examples disclosed herein relate to set-reset (SR) latch circuits and methods for manufacturing the same. In some of the disclosed examples, a SR latch circuit includes an inverter storage loop for storing state information and a set of p-channel field-effect transistors (PFETs) for control circuitry. The PFETs may include first and second PFETs connected to a first node of the inverter storage loop, and third and fourth PFETs connected to a second node of the inverter storage loop. Gate terminals of the first and fourth PFETs may be connected to a first control input, and gate terminals of the second and third PFETs may be connected to a second control input.

The present disclosure includes storage circuits, such latches. In one embodiment, a circuit includes a plurality of latches, each latch including a first N-type transistor formed in a first P-type material, a first P-type transistor formed in a first N-type material, a second N-type transistor formed in a second P-type material, and a second P-type transistor formed in a second N-type material. The first and second N-type transistors are formed in different P-wells and the first and second P-type transistors are formed in different N-wells. In other storage circuits, charge extraction transistors are coupled to data storage nodes and are biased in a nonconductive state. These techniques make the data storage circuits more resilient, for example, to an ionizing particle striking the circuit and generating charge carriers that would otherwise change the state of the storage node.

A hybrid true single-phase clock (H-TSPC) circuit includes a first logic circuit comprising non-ratio (NR) logic, a first mode switching device coupled to an output of the first logic circuit, a second logic circuit comprising ratio (R) logic, the second logic circuit configured to receive an output of the first logic circuit, a second mode switching device coupled to an output of the second logic circuit, a third logic circuit comprising non-ratio (NR) logic, the third logic circuit configured to receive an output of the second logic circuit, and a third mode switching device coupled to an output of the third logic circuit, wherein the first logic circuit, second logic circuit, and third logic circuit are configured in a ring.

To provide a miniaturized data holding circuit. First and second MOS transistors respectively transmit a data signal and an inverted data signal to inputs of first and second inverting gates that constitute a state holding circuit when a clock signal is at a first level. Fifth and sixth MOS transistors are respectively inserted in a feedback path from an output of the second inverting gate to the input of the first inverting gate and a feedback path from an output of the first inverting gate to the input of the second inverting gate, and respectively transmit the outputs of the second and first inverting gates when the clock signal is at a second signal level. Seventh and eighth MOS transistors are constituted in a channel of a conductive type different from the first MOS transistor and connected in parallel to the fifth and sixth MOS transistors, respectively, and transmit the output of the second inverting gate and the output of the first inverting gate on the basis of the inverted data signal and the data signal, respectively.