A power management circuit includes an inverter circuit and a latch circuit. The inverter circuit is configured to receive a first control signal from an inverter input terminal and generate a second control signal at an inverter output terminal. The first control signal carries power status information of a first supply voltage. The latch circuit has a latch supply terminal, a first latch input terminal and a second latch input terminal. The latch supply terminal is coupled to a second supply voltage becoming ready before the first supply voltage. The first latch input terminal and the second latch input terminal are coupled to the inverter output terminal and the inverter input terminal respectively. The latch circuit is configured to generate a third control signal according to respective signal levels of the first control signal and the second control signal, and accordingly perform power control of an integrated circuit.

A low leakage level shifter circuit converts a lower voltage signal to a higher voltage signal. The level shifter includes a half-latch with an output node that is toggled between the higher voltage and a reference voltage based on an input signal toggled between the lower voltage and the reference voltage. Crosscoupled transistors keep one of the output node and a complement node charged to the higher voltage by a charge transistor while the other node is discharged by a discharge transistor. To discharge the charged node, current through the discharge transistor needs to be higher than current through the charge transistor, but the discharge transistor is only partially turned on by the lower voltage input signal. First and second resistors coupled between the charge transistors and a voltage source reduce current through the charge transistors, allowing the discharge transistors to be smaller to avoid a high leakage current.

A semiconductor device with low power consumption can be provided. The semiconductor device includes a differential circuit and a latch circuit, the differential circuit includes a transistor including an oxide semiconductor in a channel formation region, and the latch circuit includes a transistor including a single semiconductor or a compound semiconductor in a channel formation region. The differential circuit and the latch circuit include an overlap region.

An apparatus for performing level shift control in an electronic device includes an input stage positioned in a level shifter of the electronic device, and an output stage positioned in the level shifter and coupled to the input stage through a set of intermediate nodes. The input stage is arranged for receiving at least one input signal of the level shifter through at least one input terminal of the input stage and controlling voltage levels of the set of intermediate nodes according to the at least one input signal. The input stage includes a hybrid current control circuit coupled to the at least one input terminal and arranged for performing current control for the input stage. The hybrid current control circuit is equipped with multiple sets of parallel paths for controlling currents passing through the set of intermediate nodes, respectively, each set may include two or more paths in parallel.

A sense amplifier including a first input transistor having a first input gate and a first drain/source terminal, a second input transistor having a second input gate and a second drain/source terminal, a latch circuit, and a first capacitor. The latch circuit includes a first latch transistor having a third drain/source terminal connected to the first drain/source terminal and a second latch transistor having a fourth drain/source terminal connected to the second drain/source terminal. The first capacitor is connected on one side to the first input gate and on another side to the fourth drain/source terminal to reduce a coupling effect in the sense amplifier.

Described herein is a fully-differential preamplifier comprising an input differential pair, an output current load, and a current source. The current source is coupled between the input differential pair and a low voltage rail and configured to control whether the fully-differential preamplifier is operating in a first mode or a second mode, wherein the preamplifier draws more current when operating in the second mode compared to when operating in the first mode. The input differential pair is coupled between the output current load and the current source. The output current load is coupled between a high voltage rail and the input differential pair. The input differential pair comprise positive and negative inputs of the fully-differential preamplifier. Nodes where the input differential pair and the output current load are coupled to one another comprise positive and negative outputs of the fully-differential preamplifier.

A circuit includes cross coupled invertors including a first invertor and a second inventor. The first invertor and the second invertor are cross coupled at a first data node and a second data node. An input unit is coupled between the cross-coupled invertors and a power node. The input unit controls the cross-coupled invertors in response to a first input signal received at a first input terminal of the input unit and a second input signal received at a second input terminal of the input unit. A first transistor is connected between the power node and a supply node. The first transistor connects the power node to the supply node in response to an enable signal changing to a first value. A second transistor is connected between the power node and ground. The second transistor connects the power node to the ground in response to the enable signal changing to a second value.

A 1/n-rate decision feedback equalizer (DFE) and method include a plurality of branches. Each branch includes a summer circuit configured to add a feedback signal to a received input, and a latch configured to receive an output of the summer circuit in accordance with a clock signal. A feedback circuit includes a multiplexer configured to receive as input, an output of each branch, the multiplexer having a clocked select input and configured to multiplex the output of each branch to assemble a full rate bit sequence, and a filter configured to provide cancellation of intersymbol interference (ISI) from the received input to be provided to the summer circuit of each branch.

Output signal generation circuitry 100 may be used for converting an input signal 110 from a source voltage domain to an output signal for a destination voltage domain, the destination voltage domain operating from a supply voltage that exceeds a stressing threshold of components within the output signal generation circuitry. The output signal generation circuitry may comprise level shifting circuitry 160 operating from the supply voltage, which is configured to generate at an output node 130 the output signal for the destination voltage domain in dependence on the input signal. The output signal generation circuitry may also comprise tracking circuitry 280A, 280B, 280C, 280D associated with at least one component of the level shifting circuitry to ensure that a voltage drop across the at least one component does not exceed the stressing threshold, wherein the tracking circuitry additionally introduces a delay in a change in the output signal in response to a change in the input signal. Timing compensation circuitry 180A, 180B may also be provided, to control the voltage on the output node in a manner to compensate for the delay introduced by the tracking circuitry.

Disclosed systems and methods relate to a power efficient voltage level translator. In a normal mode wherein a first supply voltage of the first voltage domain and a second supply voltage of the second voltage domain are different, the voltage level translator translates an input signal in a first voltage domain to an output signal in a second voltage domain In a bypass mode wherein the first supply voltage and the second supply voltage are substantially the same, a bypass circuit is configured to bypass the voltage level translator and provide the input signal as the output signal in the first voltage domain, thus avoiding delay introduced by the voltage level translator in the bypass mode. Further, a power-down circuit is configured to power-down the voltage level translator in the bypass mode but not in the normal mode.