H03M13/1545

REED-SOLOMON CODE SOFT-DECISION DECODING METHOD AND DEVICE
20220140845 · 2022-05-05 ·

Disclosed is an erasure-based Reed-Solomon code soft-decision decoding method and device, capable of reducing a decoding time while minimizing the effect on error correction performance. The Reed-Solomon code soft-decision decoding device includes an erasure control circuit configured to determine whether a number of errors in a codeword is odd or even, and to provide a key equation solver circuit with a first erasure pattern or a second erasure pattern according to a result of the determining when a decoding failure is detected by a decoding error detection circuit, the first erasure pattern being provided when the number of errors is odd, the second erasure pattern being provided when the number of errors is even.

System and method for optimizing Reed-Solomon decoder for errors and erasures

A memory system, Reed Solomon (“RS”) Decoder, and method for decoding Reed-Solomon codewords includes: a Syndrome Computation engine configured as a first stage of a pipeline for receiving the RS codeword and computing one or more Syndromes; an initialization unit for providing initialization values for a key equation solver engine that generates the errata locator polynomial and the errata magnitude polynomial configured as a second stage; and as a third stage a Chien Search engine for receiving the error locator polynomial and determining the one or more locations of the one or more erasures and random errors in the received RS codeword and an error-value evaluation (“EE”) engine for receiving the errata magnitude polynomial and determining the one or more magnitudes of the one or more erasures and random errors in the RS received codeword.

Error correction apparatus, operation method thereof and memory system using the same
11095310 · 2021-08-17 · ·

An error correction apparatus may include: an input component configured to receive data; an error information generation component having a first error detection ability to detect L errors and a second error detection ability to detect K errors, where L is a positive integer and K is an integer larger than L, and configured to generate error information including the number of errors contained in the received data and the positions of the errors, based on the first error detection ability, and generate the error information based on the second error detection ability, when the error information is not generated on the basis of the first error detection ability; an error correction component configured to correct the errors of the received data based on the generated error information; and an output component configured to output the corrected data.

SEPARATE STORAGE AND CONTROL OF STATIC AND DYNAMIC NEURAL NETWORK DATA WITHIN A NON-VOLATILE MEMORY ARRAY
20210304009 · 2021-09-30 ·

Methods and apparatus are disclosed for managing the storage of static and dynamic neural network data within a non-volatile memory (NVM) die for use with deep neural networks (DNN). Some aspects relate to separate trim sets for separately configuring a static data NVM array for static input data and a dynamic data NVM array for dynamic synaptic weight data. For example, the static data NVM array may be configured via one trim set for data retention, whereas the dynamic data NVM array may be configured via another trim set for write performance. The trim sets may specify different configurations for error correction coding, write verification, and read threshold calibration, as well as different read/write voltage thresholds. In some examples, neural network regularization is provided within a DNN by setting trim parameters to encourage bit flips to avoid overfitting. Some examples relate to managing non-DNN data, such as stochastic gradient data.

Method and apparatus for encoding and decoding data in memory system

A decoding circuit includes a Bose-Chaudhuri-Hocquenghem (BCH) decoder. The BCH decoder includes a Syndrome stage for generating syndromes based on a BCH encoded word, a Berlekamp-Massey (BM) stage performing a Berlekamp-Massey algorithm on the syndromes to generate Error Location Polynomial (ELP) coefficients, a Chien stage that performs a Chien search on the ELP coefficients using a Fast Fourier Transform (FFT) to generate error bits and iteration information, and a Frame Fixer stage configured to reorder the error bits to be sequential based on the iteration information. The BCH decoder decodes the BCH encoded word using the reordered error bits.

SYSTEM AND METHOD FOR OPTIMIZING REED-SOLOMON DECODER FOR ERRORS AND ERASURES

A memory system, Reed Solomon (“RS”) Decoder, and method for decoding Reed-Solomon codewords includes: a Syndrome Computation engine configured as a first stage of a pipeline for receiving the RS codeword and computing one or more Syndromes; an initialization unit for providing initialization values for a key equation solver engine that generates the errata locator polynomial and the errata magnitude polynomial configured as a second stage; and as a third stage a Chien Search engine for receiving the error locator polynomial and determining the one or more locations of the one or more erasures and random errors in the received RS codeword and an error-value evaluation (“EE”) engine for receiving the errata magnitude polynomial and determining the one or more magnitudes of the one or more erasures and random errors in the RS received codeword.

Memory system
11025281 · 2021-06-01 · ·

A memory system includes a nonvolatile memory and a memory controller that encodes first XOR data generated by performing an exclusive OR operation on pieces of user data, wherein a value of each bit of the XOR data is generated by performing an exclusive OR operation on values of bits that are at one of a plurality of bit positions of a piece of user data, generates codewords by encoding the plurality of pieces of user data and the generated XOR data, respectively, and stores the codewords in the nonvolatile memory. The memory controller also performs a read operation by reading the codewords from the nonvolatile memory and decoding them. When the decoding of two or more of the codewords fails, the memory controller generates second XOR data, and corrects the value of one of the bits corresponding to a codeword whose decoding failed, based on the second XOR data.

Fast page continuous read

A memory device such as a page mode NAND flash is operated, using a first pipeline stage, to clear a page buffer to a second buffer level, and transfer a page to the page buffer; a second pipeline stage to clear the second buffer level to the third buffer level and transfer the page from the page buffer to the second buffer level; a third pipeline stage to move the page to the third buffer level and execute in an interleaved fashion a first ECC function over data in a first part of the page and output the first part of the page while performing an second ECC function, and to execute the first ECC function over data in a second part of the page in the third buffer level, and to output the second part while performing the second ECC function.

LOW-POWER BLOCK CODE FORWARD ERROR CORRECTION DECODER
20230412196 · 2023-12-21 · ·

A system comprises a forward error correction decoder comprising syndrome computation circuitry, key-equation solver circuitry, and search and evaluator circuitry. The syndrome computation circuitry may comprise a plurality of syndrome compute units connected in parallel. The syndrome computation circuitry may be dynamically configurable to vary a quantity of the syndrome compute units used for processing of a codeword based on conditions of a channel over which the codeword was received. The syndrome computation circuitry may be operable to use a first quantity of the syndrome compute units for processing of a first codeword received over the channel when the channel is characterized by a first bit error rate and a second quantity of the syndrome compute units for processing of a second codeword received over the channel when the channel is characterized by a second bit error rate.

OPERATING METHOD OF MEMORY CONTROLLER, STORAGE DEVICE AND THE OPERATING METHOD THEREOF

An operating method of a memory controller is provided. The operating method includes receiving a first read data and a second conversion information, the second conversion information including data obtained by converting a second read data based on a linear operation, and the first read data and the second read data including data read from same memory cells; converting the first read data based on the linear operation to generate a first conversion information; performing a logical operation on the first conversion information and the second conversion information to generate an operation information; performing an inverse operation of the linear operation on the operation information to generate a reliability information; and correcting an error of the first read data based on the first read data and the reliability information.