A display device including a base member, a circuit layer, a display layer, a thin film encapsulation layer, and a touch sensor layer. The base member includes a first area and a second area disposed adjacent to the first area. The circuit layer is disposed on the base member to cover the first area and to expose the second area. The display layer is disposed on the circuit layer to display an image. The thin film encapsulation layer is disposed on the display layer. The touch sensor layer is disposed on the thin film encapsulation layer and includes an organic layer extending from an upper portion of the thin film encapsulation layer to cover at least a portion of the exposed second area.

An organic light emitting diode (OLED) display including: a substrate; an organic light emitting diode formed on the substrate; a metal oxide layer formed on the substrate and covering the organic light emitting diode; a first inorganic layer formed on the substrate and covering the organic light emitting diode; a second inorganic layer formed on the first inorganic layer and contacting the first inorganic layer at an edge of the second inorganic layer, an organic layer formed on the second inorganic layer and covering a relatively smaller area than the second inorganic layer; and a third inorganic layer formed on the organic layer, covering a relatively larger area than the organic layer, and contacting the first inorganic layer and the second inorganic layer at an edge of the third inorganic layer.

The present disclosure provides a method of fabricating a nanoporous thin film device comprising depositing a template on a substrate to form a nanoporous insulating layer, the template comprising one or more polymers capable of forming pores when polymerized and at least one cross-linking agent, and depositing a second layer (e.g. organic semiconductor, semiconductor, insulator) on the nonporous insulating layer to form a thin film having a plurality of isolated nanopores on the surface. Nanoporous semiconductor thin films made by these methods is provided. Sensors and devices comprising the nanoporous thin film is also disclosed.

An OLED packaging method and structure are disclosed. In the present invention, forming a ring-shaped organic layer on the edge of the inorganic barrier layer, and then forming a planar organic layer on the upper surface of the inorganic barrier layer surrounded by the ring-shaped organic layer. The planar organic layer and the ring-shaped organic layer are integrated together to form an organic buffering layer. The upper surface of the organic buffering layer is flat, and the region of the organic buffering layer corresponding to the edge position of the inorganic barrier layer does not have an upward projection, the film thickness and morphology of the inorganic barrier layer are not affected. The present invention can improve the barrier effect of inorganic barrier layer for water and oxygen. The upper surface of the organic buffering layer in the OLED packaging structure is flat and has a good encapsulation effect.

An organic thin film transistor includes a transparent base substrate and a transparent gate layer formed on the transparent base substrate. A gate insulating layer includes an oxidized inorganic sub-layer and a non-oxidized organic sub-layer formed on the transparent gate layer. A source electrode and a drain electrode are buried within the non-oxidized organic sub-layer. Each of the source electrode and the drain electrode has a bottom side, and the bottom side surface of each of the source electrode and the drain electrode faces the transparent gate layer and contacts the non-oxidized organic sub-layer. The transparent gate layer is buried within the oxidized inorganic sub-layer, and the oxidized inorganic sub-layer covers a top surface and side surfaces of the transparent gate layer.

In accordance with various embodiments of the disclosed subject matter, an organic thin film transistor, and a fabricating method thereof are provided. In some embodiments, the method for forming an organic thin film transistor (OTFT), comprising: forming a transparent gate layer on a transparent base substrate; forming a first initial silicone polymer layer on the transparent gate layer; and performing an oxidization process to partially oxidize the first initial silicone polymer layer to form a gate insulating layer, including an oxidized inorganic sub-layer that contacts the transparent gate layer, and a non-oxidized organic sub-layer.

Disclosed are a coating liquid including polyorganosiloxane represented by Chemical Formula 1, a film obtained therefrom, a stacked structure including the same, a thin film transistor, and an electronic device.

(R.sup.1R.sup.2R.sup.3SiO.sub.1/2).sub.M1(R.sup.4R.sup.5SiO.sub.2/2).sub.D1(R.sup.6SiO.sub.3/2).sub.T1(R.sup.7SiO.sub.3/2).sub.T2(R.sup.8SiO.sub.3/2).sub.T3(SiO.sub.4/2).sub.Q1[Chemical Formula 1]

In Chemical Formula 1, R.sup.1 to R.sup.8, M1, D1, T1 to T3, and Q1 are the same as defined in the detailed description.

A method of manufacturing an organic semiconductor transistor is provided. The method incudes forming a gate insulating layer on a gate electrode, forming a source electrode and a drain electrode which are spaced apart from each other on the gate insulating layer, forming a channel layer using an organic semiconductor on a gate insulating layer on which the source electrode and the drain electrode are formed, and thermally depositing dopant molecules on the channel layer, wherein, in the thermal deposition of the dopants, the dopant molecules are thermally deposited to be spaced above a position at which each of the source electrode and the drain electrode is in contact with the channel layer, and the dopant molecules and the organic semiconductor form a material combination in which the dopant molecules diffuse in the organic semiconductor in a solid-state diffusion manner.

A compound for self-assembly onto a mineral and/or metal oxides substrate, the compound comprising a catechol group attached to an end group through a spacer group. The compound include a structure of Formula (I):

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A high dielectric constant composite material and method for preparing organic thin film transistor using the material as dielectric. The method includes: using sol-gel method, hydrolyzing terminal group-containing silane coupling agent to form functional terminal group-containing silica sol, cross-linked with organic polymer to form composite sol as material of dielectric of organic thin film transistor; forming film by solution method such as spin coating, dip coating, inkjet printing, 3D printing, etc., forming dielectric after curing; preparing semiconductor and electrode respectively to prepare organic thin film transistor device, which, based on composite dielectric material, has mobility of 5 cm2/V.Math.s, exceeding that of using SiO2, having low threshold voltage and no hysteresis effect. Compared with traditional processes like SiO2 thermal oxidation, above method has advantages of simple process, low cost, suitable for large-area preparation, with great market application value.