A flexible organic light emitting diode display and a manufacturing method thereof are provided. The manufacturing method includes steps of forming an active array layer and a photoresist layer sequentially on a flexible substrate, patterning the photoresist layer to form a plurality of pixel units, forming a light emitting main layer between two of the pixel units adjacent to each other, removing the pixel units with an organic solvent, forming a conductive transport layer on the light emitting main layer, and forming an encapsulation layer on the conductive transport layer.

An OLED packaging method and structure are disclosed. In the present invention, forming a ring-shaped organic layer on the edge of the inorganic barrier layer, and then forming a planar organic layer on the upper surface of the inorganic barrier layer surrounded by the ring-shaped organic layer. The planar organic layer and the ring-shaped organic layer are integrated together to form an organic buffering layer. The upper surface of the organic buffering layer is flat, and the region of the organic buffering layer corresponding to the edge position of the inorganic barrier layer does not have an upward projection, the film thickness and morphology of the inorganic barrier layer are not affected. The present invention can improve the barrier effect of inorganic barrier layer for water and oxygen. The upper surface of the organic buffering layer in the OLED packaging structure is flat and has a good encapsulation effect.

A light-emitting device (10) includes a light-transmitting first base material (210), a light-transmitting second base material (220), and a plurality of light-emitting units (140). The light-emitting units (140) are located between the first base material (210) and the second base material (220). The light-emitting units (140) emit light having a peak at a first wavelength. In addition, the light-emitting device (10) includes a light-transmitting region located between the plurality of light-emitting units (140). The second base material (220) includes an optical function layer (170). The optical function layer (170) is a layer which particularly reflects light of the first wavelength.

A flexible display device includes a flexible substrate, an inorganic barrier layer, a metal layer, an organic buffer layer, and an insulating layer. The inorganic barrier layer is located on the flexible substrate. The metal layer is located on the inorganic barrier layer and in contact with the inorganic barrier layer. The organic buffer layer covers the inorganic barrier layer and the metal layer, and has at least one conductive via connected to the metal layer. The insulating layer is located on the organic buffer layer.

One aspect of this invention relates to an ohmic-contact-gated transistor (OCGT), comprising a bottom gate electrode formed on a substrate; a first dielectric layer formed on the bottom gate electrode; a thin film formed of a semiconducting material on the first dielectric layer; a bottom contact formed on a part of the thin film; a second dielectric layer conformally grown on the bottom contact to result in a self-aligned dielectric extension from the bottom contact on the thin film; and a top contact formed on the second dielectric layer on the top of the bottom contact and fully overlapping with the dielectric extension to define a device channel in the thin film under the dielectric extension between the bottom contact and the top contact.

A display device including a base member, a circuit layer, a display layer, a thin film encapsulation layer, and a touch sensor layer. The base member includes a first area and a second area disposed adjacent to the first area. The circuit layer is disposed on the base member to cover the first area and to expose the second area. The display layer is disposed on the circuit layer to display an image. The thin film encapsulation layer is disposed on the display layer. The touch sensor layer is disposed on the thin film encapsulation layer and includes an organic layer extending from an upper portion of the thin film encapsulation layer to cover at least a portion of the exposed second area.

An organic light emitting diode (OLED) display including: a substrate; an organic light emitting diode formed on the substrate; a metal oxide layer formed on the substrate and covering the organic light emitting diode; a first inorganic layer formed on the substrate and covering the organic light emitting diode; a second inorganic layer formed on the first inorganic layer and contacting the first inorganic layer at an edge of the second inorganic layer, an organic layer formed on the second inorganic layer and covering a relatively smaller area than the second inorganic layer; and a third inorganic layer formed on the organic layer, covering a relatively larger area than the organic layer, and contacting the first inorganic layer and the second inorganic layer at an edge of the third inorganic layer.

The present invention relates to a solution or ink composition for fabricating high-performance thin-film transistors. The solution or ink comprises an organic semiconductor and a mediating polymer such as polyacrylonitrile, polystyrene, or the like or mixture thereof, in an organic solvent such as chlorobenzene or dichlorobenzene. The percentage ratio by weight of semiconductor:mediating polymer ranges from 5:95 to 95:5, and preferably from 20:80 to 80:20. The solution or ink is used to fabricate via solution coating or printing a semiconductor film, followed by drying and thermal annealing if necessary to provide a channel semiconductor for organic thin-film transistors (OTFTs). The resulting OTFT device with said channel semiconductor has afforded OTFT performance, particularly field-effect mobility and current on/off ratio that are superior to those OTFTs with channel semiconductors fabricated without a mediating polymer.

An organic light emitting diode (OLED) display including: a substrate; an organic light emitting diode formed on the substrate; a metal oxide layer formed on the substrate and covering the organic light emitting diode; a first inorganic layer formed on the substrate and covering the organic light emitting diode; a second inorganic layer formed on the first inorganic layer and contacting the first inorganic layer at an edge of the second inorganic layer; an organic layer formed on the second inorganic layer and covering a relatively smaller area than the second inorganic layer; and a third inorganic layer formed on the organic layer, covering a relatively larger area than the organic layer, and contacting the first inorganic layer and the second inorganic layer at an edge of the third inorganic layer.

The invention provides an OTFT and manufacturing method thereof. The OTFT comprises: a substrate; a source/drain electrode layer, formed on the substrate; an organic semiconductor layer, formed on the source/drain electrode layer; an organic insulating layer, formed on the organic semiconductor layer; a charge injection layer, formed on the organic insulating layer; a gate electrode layer, formed on the charge injection layer. The invention also provides a corresponding manufacturing method. The OTFT of the invention provides a novel structure for organic thin film transistor to improve the OTFT device stability; the OTFT prepared by the manufacturing method of OTFT of the present invention improves the OTFT device stability.