Exemplary methods of semiconductor processing may include etching one or more features partially through a stack of layers formed on a substrate. The methods may include halting the etching prior to penetrating fully through the stack of layers formed on the substrate. The methods may include forming a layer of carbon-containing material along the stack of layers on the substrate. The layer of carbon-containing material may include a metal. The methods may include etching the one or more features fully through the stack of layers on the substrate.

A coating liquid for forming a metal oxide film, the coating liquid including: a metal source, which is at least one selected from the group consisting of inorganic salts, oxides, hydroxides, metal complexes, and organic acid salts; at least one alkali selected from the group consisting of organic alkalis and inorganic alkalis; and a solvent.

Methods and systems for selectively depositing dielectric films on a first surface of a substrate relative to a passivation layer previously deposited on a second surface are provided. The methods can include at least one cyclical deposition process used to deposit material on the first surface while the passivation layer is removed, thereby preventing deposition over the passivation layer.

The present invention relates to a vapor deposition compound enabling thin-film deposition through vapor deposition, and particularly to nickel and cobalt precursors capable of being applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and having superior thermal stability and reactivity, and a method of preparing the same.

A method of forming high quality a-BN layers. The method includes use of a precursor chemistry that is particularly suited for use in a cyclical deposition process such as in chemical vapor deposition (CVD), atomic layer deposition (ALD), and the like. In brief, new methods are described of forming boron nitride (BN) layers from precursors capable of growing amorphous BN (a-BN) films by CVD, ALD, or the like. In some cases, the precursor is or includes a borane adduct of hydrazine or a hydrazine derivative.

Methods and precursors for depositing metal fluoride films on a substrate surface are described. The method includes exposing the substrate surface to a metal precursor and a fluoride precursor. The fluoride precursor is volatile at a temperature in a range of from 20° C. to 200° C. The metal precursor reacts with the fluoride precursor to form a non-volatile metal fluoride film.

The present disclosure describes epitaxial oxide field effect transistors (FETs). In some embodiments, a FET comprises: a substrate comprising an oxide material; an epitaxial semiconductor layer on the substrate; a gate layer on the epitaxial semiconductor layer; and electrical contacts. In some cases, the epitaxial semiconductor layer can comprise a superlattice comprising a first and a second set of layers comprising oxide materials with a first and second bandgap. The gate layer can comprise an oxide material with a third bandgap, wherein the third bandgap is wider than the first bandgap. In some cases, the epitaxial semiconductor layer can comprise a second oxide material with a first bandgap, wherein the second oxide material comprises single crystal A.sub.xB.sub.1-xO.sub.n, wherein 0<x<1.0, wherein A is Al and/or Ga, wherein B is Mg, Ni, a rare earth, Er, Gd, Ir, Bi, or Li.

An etching method includes preparing a substrate including a first region containing a first material and a second region containing a second material different from the first material; and etching the second region with a plasma generated from a processing gas containing a tungsten-containing gas. In the etching, a flow rate of the tungsten-containing gas is the largest among all gases contained in the processing gas except for an inert gas.

Methods and systems for depositing vanadium and/or indium layers onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium and/or indium layer onto the surface of the substrate. The cyclical deposition process can include providing a vanadium and/or indium precursor to the reaction chamber and separately providing a reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process. Exemplary structures can include field effect transistor structures, such as gate all around structures. The vanadium and/or indium layers can be used, for example, as barrier layers or liners, as work function layers, as dipole shifter layers, or the like.

Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO.sub.2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.