What is provided is a transistor including a gate electrode, a gate insulating film, a semiconductor film, a source electrode, and a drain electrode, in which the gate insulating film is a laminated film in which a SiO.sub.x film and a SiC.sub.yN.sub.z film are alternately formed, the total number of films constituting the laminated film is 3 or more and 18 or less, and the thickness of each film constituting the laminated film is 25 nm or more and 150 nm or less.

Methods for filling the gap of a semiconductor feature comprising exposure of a substrate surface to a precursor and reactant and an anneal environment to decrease the wet etch rate ratio of the deposited film and fill the gap.

Methods for seam-less gapfill comprising forming a flowable film by exposing a substrate surface to a silicon-containing precursor and a co-reactant are described. The silicon-containing precursor has at least one akenyl or alkynyl group. The flowable film can be cured by any suitable curing process to form a seam-less gapfill.

Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a carboxylic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, a hydrazide is exposed to a substrate to selectively form a blocking layer. In some embodiments, an alkyl phosphonic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, the alkyl phosphonic acid is formed in-situ and exposed to the substrate. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed.

There is provided a technique that includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a precursor gas to the substrate in a process container of a substrate processing apparatus via a first pipe made of metal; (b) supplying an oxygen-containing gas to the substrate in the process container via a second pipe made of metal, wherein a fluorine-containing layer is continuously formed on an inner surface of the second pipe; and (c) supplying a nitrogen-and-hydrogen-containing gas to the substrate in the process container via the second pipe.

There is provided a technique that includes (a) forming a first film having a first thickness on an underlayer by supplying a first process gas not including oxidizing gas to a substrate, wherein the first film contains silicon, carbon, and nitrogen and does not contain oxygen, and the underlayer is exposed on a surface of the substrate and is at least one selected from the group of a conductive metal-element-containing film and a nitride film; and (b) forming a second film having a second thickness larger than the first thickness on the first film by supplying a second process gas including oxidizing gas to the substrate, wherein the second film contains silicon, oxygen, and nitrogen, and wherein in (b), oxygen atoms derived from the oxidizing gas and diffuse from a surface of the first film toward the underlayer are absorbed by the first film and the first film is modified.

Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.

Methods and related systems for topographically depositing a material on a substrate are disclosed. The substrate comprises a proximal surface and a gap feature. The gap feature comprises a sidewall and a distal surface. Exemplary methods comprise, in the given order: a step of positioning the substrate on a substrate support in a reaction chamber; a step of subjecting the substrate to a plasma pre-treatment; and, a step of selectively depositing a material on at least one of the proximal surface and the distal surface with respect to the sidewall. The step of subjecting the substrate to a plasma pre-treatment comprises exposing the substrate to at least one of fluorine-containing molecules, ions, and radicals.

A method includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first layer by supplying a precursor to the substrate; and (b) forming a second layer by supplying a reactant to the substrate and modifying the first layer. The (a) includes: (a-1) supplying the precursor to the substrate from a first supply part while supplying an inert gas at a first flow rate, and supplying an inert gas at a second flow rate from a second supply part; and (a-2) supplying the precursor to the substrate while supplying the inert gas at a third flow rate from the first supply part, or supplying the precursor from the first supply part while stopping the supply of the inert gas, and supplying the inert gas at a fourth flow rate from the second supply part.

There is provided a technique that includes: (a) arranging a plurality of first substrates and a second substrate having a smaller surface area than the first substrates and accommodating the plurality of first substrates and the second substrate in a process chamber; and (b) forming a thin film on each of the plurality of first substrates by supplying a processing gas to a substrate arrangement region in which the plurality of first substrates and the second substrate are arranged, wherein (b) includes: (c) supplying a dilution gas to a first supply region of the substrate arrangement region, or not performing a supply of the dilution gas to the first supply region, and supplying the dilution gas to at least one second supply region of the substrate arrangement region at a flow rate larger than a flow rate of the dilution gas supplied to the first supply region.