Examples of a technique for forming a dielectric material for an integrated circuit are provided herein. In an example, an integrated circuit workpiece is received that includes a recess. A first dielectric precursor is deposited in the recess. The first dielectric precursor includes a non-semiconductor component. A second dielectric precursor is deposited in the recess on the first dielectric precursor, and an annealing process is performed such that a portion of the non-semiconductor component of the first dielectric precursor diffuses into the second dielectric precursor. The non-semiconductor component may include oxygen, and the annealing process may be performed in one of a vacuum or an inert gas environment.

A semiconductor structure formation method includes: providing a base and a trench located in the base, and depositing a fluidic initial film layer in the trench, impurity elements being present in the initial film layer; performing reactive oxygen treatment on the initial film layer; performing ultraviolet irradiation treatment on the initial film layer; and performing thermal treatment on the initial film layer in an aerobic environment, removing the impurity elements, and converting the initial film layer into a solid film layer. Quality of the film layer of the semiconductor structure can therefore be improved.

Embodiments of the semiconductor processing methods to form low-κ films on semiconductor substrates are described. The processing methods may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-containing precursor that has at least one vinyl group. The methods may further include generating a deposition plasma in the substrate processing region from the deposition precursors. A silicon-and-carbon-containing material, characterized by a dielectric constant (κ value) less than or about 3.0, may be deposited on the substrate from plasma effluents of the deposition plasma.

A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about −20° C. to about 400° C.; introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.

A method and apparatus for material deposition onto a sample to form a protective layer composed of at least two materials that have been formulated and arranged according to the material properties of the sample.

A plasma CVD device (10) includes a vacuum container (21) including a space accommodating a film formation subject (S), a storage (30) storing hydrogen-free isocyanate silane and heating the isocyanate silane to generate an isocyanate silane gas supplied to the vacuum container (21), a pipe (11) connecting the storage (30) to the vacuum container (21) to supply the isocyanate silane gas generated by the storage (30) to the vacuum container (21), a temperature adjuster (12) adjusting a temperature of the pipe (11) to 83° C. or higher and 180° C. or lower, an electrode (22) disposed in the vacuum container (21), and a power supply (23) supplying high-frequency power to the electrode (22). When a silicon oxide film is formed on the film formation subject (S) in the vacuum container (21), pressure of the vacuum container (21) is greater than or equal to 50 Pa and less than 500 Pa.

A method for manufacturing an integrated circuit includes patterning a plurality of photomask layers over a substrate, partially backfilling the patterned plurality of photomask layers with a first material using atomic layer deposition, completely backfilling the patterned plurality of photomask layers with a second material using atomic layer deposition, removing the plurality of photomask layers to form a masking structure comprising at least one of the first and second materials, and transferring a pattern formed by the masking structure to the substrate and removing the masking structure. The first material includes a silicon dioxide, silicon carbide, or carbon material, and the second material includes a metal oxide or metal nitride material.

A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate. The alternating stack includes a first region in which all layers of the alternating stack are present and a second region in which at least a topmost one of the electrically conductive layers is absent. First memory opening fill structures extend through the first region of the alternating stack, and second memory opening fill structures extend through the second region of the alternating stack. The first memory opening fill structures have a greater height than the second memory opening fill structures. Pocket doping regions extending over a respective subset of topmost electrically conductive layers for the memory opening fill structures can be formed to provide higher threshold voltages and to enable selective activation of vertical semiconductor channels connected a same bit line.

Exemplary deposition methods may include forming a plasma of an oxygen-containing precursor within a processing region of a semiconductor processing chamber. The processing region may house a semiconductor substrate on a substrate support. The methods may include, while maintaining the plasma of the oxygen-containing precursor, flowing a silicon-containing precursor into the processing region of the semiconductor processing chamber at a first flow rate. The methods may include ramping the first flow rate of the silicon-containing precursor over a period of time to a second flow rate greater than the first flow rate. The methods may include depositing a silicon-containing material on the semiconductor substrate.

A method and apparatus for material deposition onto a sample to form a protective layer composed of at least two materials that have been formulated and arranged according to the material properties of the sample.