A method includes forming an under bump metallization (UBM) layer over a dielectric layer, forming a redistribution structure over the UBM layer, disposing a semiconductor device over the redistribution structure, removing a portion of the dielectric layer to form an opening to expose the UBM layer, and forming a conductive bump in the opening such that the conductive bump is coupled to the UBM layer.

A method may include generating a residual curvature map for a substrate, the residual curvature map being based upon a measurement of a surface of the substrate. The method may include generating a dose map based upon the residual curvature map, the dose map being for processing the substrate using a patterning energy source; and applying the dose map to process the substrate using the patterning energy source.

A base substrate includes a supporting substrate comprising aluminum oxide, and a base crystal layer provided on a main face of the supporting substrate, comprising a crystal of a nitride of a group 13 element and having a crystal growth surface. At lease one of a metal of a group 13 element and a reaction product of a material of the supporting substrate and the crystal of the nitride of the group 13 element is present between the raised part and the supporting substrate. The reaction product contains at least aluminum and a group 13 element.

There is provided a substrate processing apparatus including: a processing container having a vacuum atmosphere formed therein; a stage provided within the processing container and configured to place a substrate on the stage; a film-forming gas supply part configured to supply a film-forming gas for forming an organic film on the substrate placed on the stage; and a heating part configured to heat the substrate placed on the stage in a non-contact manner so as to remove a surface portion of the organic film.

A method for uniformly irradiating a frame of a processed substrate, the processed substrate including a plurality of frames, two consecutive frames being separated by an intermediate zone, the method includes steps of: determining an initial position of the processed substrate using a detecting unit; comparing the detected initial position with a first predetermined position associated with a first frame of the processed substrate; irradiating the first frame of the processed substrate by an irradiation beam emitted by a source unit and scanned by a scanning unit based on the first predetermined position, the irradiation beam being adapted to cover uniformly the whole first frame. A system for uniformly irradiating a frame of a processed substrate is also described.

A method for manufacturing a gallium nitride semiconductor device includes: preparing a gallium nitride wafer; forming an epitaxial growth film on the gallium nitride wafer to provide a processed wafer having chip formation regions; perform a surface side process on a one surface side of the processed wafer; removing the gallium nitride wafer and dividing the processed wafer into a chip formation wafer and a recycle wafer; and forming an other surface side element component on an other surface side of the chip formation wafer.

A packaged electronic device includes an integrated circuit and an electrically non-conductive encapsulation material in contact with the integrated circuit. A thermal conduit extends from an exterior of the package, through the encapsulation material, to the integrated circuit. The thermal conduit has a thermal conductivity higher than the encapsulation material contacting the thermal conduit. The thermal conduit includes a cohered nanoparticle film. The cohered nanoparticle film is formed by a method which includes an additive process.

A solid body is disclosed. The solid body includes: a detachment plane in an interior space of the solid body, the detachment plane including laser radiation-induced modifications; and a region including layers and/or components. A multi-component arrangement is also disclosed. The multi-component arrangement includes: a solid-body layer including more than 50% SiC and modifications or modification components generating pressure tensions in a region of a first surface, the modifications being amorphized components of the solid-body layer, the modifications being spaced closer to the first surface than to a second surface opposite the first surface, the first surface being essentially level; and a metal layer on the first surface of the solid-body layer.

To provide a wafer processing method which can simplify the wafer processing process and efficiently obtain chips of stable quality. A wafer processing method includes: a tape attaching step of attaching a back grinding tape to the front surface of a wafer; a modified region forming step of applying a laser beam from the back surface of the wafer along a cut line to form modified regions inside the wafer; a back surface processing step of processing the back surface of the wafer having the modified regions to reduce a thickness of the wafer; and a dividing step of, in a state in which the back grinding tape is attached to the front surface of the wafer, applying a load to the cut line from the back surface of the wafer to divide the wafer along the cut line and obtain individual chips.

According to a flexible light-emitting device production method of the present disclosure, after an intermediate region (30i) and flexible substrate regions (30d) of a plastic film (30) of a multilayer stack (100) are divided from one another, the interface between the flexible substrate regions (30d) and a glass base (10) is irradiated with lift-off light. The multilayer stack (100) is separated into a first portion (110) and a second portion (120) while the multilayer stack (100) is in contact with a stage (210). The first portion (110) includes a plurality of light-emitting devices (1000) which are in contact with the stage (210). The light-emitting devices (1000) include a plurality of functional layer regions (20) and the flexible substrate regions (30d). The second portion (120) includes the glass base (10) and the intermediate region (30i). The step of irradiating with the lift-off light includes making the irradiation intensity of lift-off light for at least part of the interface between the intermediate region (30i) and the glass base (10) lower than the irradiation intensity of lift-off light for the interface between the flexible substrate regions (30d) and the glass base (10).