The present invention relates to processes of making components for electronic and optical devices using laser processing and devices comprising such components. Such process uses a laser to introduce chemical and/or structural changes in substrates and films that are the raw materials from which components for electronic and optical devices are made. Such process yields components that can have one or more electronic and/or optical functionalities that are integrated on the same substrate or film. In addition, such process does not require large-scale clean rooms and is easily configurable. Thus, rapid device prototyping, design change and evolution in the lab and on the production side is realized.

A method of forming a semiconductor structure includes forming first semiconductor devices over a first substrate, forming a first dielectric material layer over the first semiconductor devices, forming vertical recesses in the first dielectric material layer, such that each of the vertical recesses vertically extends from a topmost surface of the first dielectric material layer toward the first substrate, forming silicon nitride material portions in each of the vertical recesses; and locally irradiating a second subset of the silicon nitride material portions with a laser beam. A first subset of the silicon nitride material portions that is not irradiated with the laser beam includes first silicon nitride material portions that apply tensile stress to respective surrounding material portions, and the second subset of the silicon nitride material portions that is irradiated with the laser beam includes second silicon nitride material portions that apply compressive stress to respective surrounding material portions.

A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formulation region of a TFT, thereby preventing grain boundaries rom lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

The present invention relates to a method for separating at least one solid-body layer (4) from at least one solid body (1). Thereby, the method as claimed in the invention comprises the steps: creating a plurality of modifications (9) by means of laser beams within the interior space of the solid body (1) to form a detachment plane (8), producing a composite structure by arranging or producing layers and/or components (150) on or above an initially exposed surface (5) of the solid body (1), wherein the exposed surface (5) is an integral part of the solid-body layer (4) to be separated, introducing an external force into the solid body (1) for generating tensions within the solid body (1), wherein the external force is so strong that the tensions initialize a crack propagation along the detachment plane (8), wherein the modifications for forming the detachment plane (8) are created before producing the composite structure.

A packaged electronic device includes an integrated circuit and an electrically non-conductive encapsulation material in contact with the integrated circuit. A thermal conduit extends from an exterior of the package, through the encapsulation material, to the integrated circuit. The thermal conduit has a thermal conductivity higher than the encapsulation material contacting the thermal conduit. The thermal conduit includes a cohered nanoparticle film. The cohered nanoparticle film is formed by a method which includes an additive process.

A method of deposition is disclosed. The method can include dispensing a formable material over a substrate, where the substrate includes a non-uniform surface topography, and where the substrate includes an active zone and an exclusion zone. The method can also include curing the formable material in the exclusion zone to form a circular edge between the exclusion zone and the active zone, contacting the formable material with a superstrate, and curing the formable material in the active zone to form a layer over the substrate, wherein curing is performed while the superstrate is contacting the formable material.

According to a flexible light-emitting device production method of the present disclosure, after an intermediate region (30i) and flexible substrate regions (30d) of a plastic film (30) of a multilayer stack (100) are divided from one another, the interface between the flexible substrate regions (30d) and a glass base (10) is irradiated with lift-off light. The multilayer stack (100) is separated into a first portion (110) and a second portion (120) while the multilayer stack (100) is in contact with a stage (210). The first portion (110) includes a plurality of light-emitting devices (1000) which are in contact with the stage (210). The light-emitting devices (1000) include a plurality of functional layer regions (20) and the flexible substrate regions (30d). The second portion (120) includes the glass base (10) and the intermediate region (30i). The step of irradiating with the lift-off light includes making the irradiation intensity of lift-off light for at least part of the interface between the intermediate region (30i) and the glass base (10) lower than the irradiation intensity of lift-off light for the interface between the flexible substrate regions (30d) and the glass base (10).

A method for fabricating an electronic fuse includes forming a recess within a film material to define opposed contact segments and a central fuse segment interconnecting the contact segments and altering the material of the central fuse segment of the film material to increase electrical resistance characteristics of the central fuse segment. The central fuse segment may include defects such as voids created by directing a laser at the central fuse segment as a component of a laser annealing process. Alternatively, and or additionally, the central fuse segment may include dopants implementing via an ion implantation process to increase resistance characteristics of the central fuse segment.

A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

A chip-on-film includes an insulating film including a bonding region for bonding to an external device, a plurality of interconnections disposed on the insulating film and partially extending into the bonding region, and an integrated circuit (IC) chip disposed on the insulating film so as to be electrically connected to the plurality of interconnections. The chip-on-film further includes a solder resist disposed so as to cover the insulating film excluding the bonding region and so as to cover the plurality of interconnections excluding portions extending into the bonding region, and a stepped portion located between the bonding region and the solder resist. The stepped portion forms a boundary against a flow of the solder resist into the bonding region.