Embodiments of the invention include a method for fabricating a semiconductor device and the resulting structure. A substrate is provided. A plurality of metal portions are formed on the substrate, wherein the plurality of metal portions are arranged such that areas of the substrate remain exposed. A thin film layer is deposited on the plurality of metal portions and the exposed areas of the substrate. A dielectric layer is deposited, wherein the dielectric layer is in contact with portions of the thin film layer on the plurality of metal portions, and wherein the dielectric layer is not in contact with portions of the thin film layer on the exposed areas of the substrate such that one or more enclosed spaces are present between the thin film layer on the exposed areas of the substrate and the dielectric layer.

A method of producing graphene or other two-dimensional material such as graphene including heating the substrate held within a reaction chamber to a temperature that is within a decomposition range of a precursor, and that allows two-dimensional crystalline material formation from a species released from the decomposed precursor; establishing a steep temperature gradient (preferably >1000° C. per meter) that extends away from the substrate surface towards an inlet for the precursor; and introducing precursor through the relatively cool inlet and across the temperature gradient towards the substrate surface. The steep temperature gradient ensures that the precursor remains substantially cool until it is proximate the substrate surface thus minimizing decomposition or other reaction of the precursor before it is proximate the substrate surface. The separation between the precursor inlet and the substrate is less than 100 mm.

Provided are a graphene-based laminate and a method of preparing the graphene-based laminate. The graphene-based laminate may include a substrate; a graphene layer formed on at least one surface of the substrate; and an inorganic layer formed on the graphene layer and including a fluorine-containing lithium compound.

Provided are a method of preparing a graphene-based thin-film laminate and the graphene-based thin-film laminate prepared by using the method. The method may include repeating following operations 60 times or less, the cycle including: (a) to (d) processes described above, a graphene-based thin-film laminate prepared using the same, and an electrode and electronic device including the graphene-based thin-film laminate.

A device includes a non-insulator structure, a first dielectric layer, and a first conductive feature. The first dielectric layer is over the non-insulator structure. The first conductive feature is in the first dielectric layer and includes carbon nano-tubes. The first catalyst layer is between the first conductive feature and the non-insulator structure. A top of the first catalyst layer is lower than a top of the first conductive feature.

Plasmonic graphene is fabricated using thermally assisted self-assembly of plasmonic nanostructure on graphene. Silver nanostructures were deposited on graphene as an example.

A process for forming graphene, includes: depositing at least a first and a second metal onto a surface of silicon carbide (SiC), and heating the SiC and the first and second metals under conditions that cause the first metal to react with silicon of the silicon carbide to form carbon and at least one stable silicide. The corresponding solubilities of the carbon in the stable silicide and in the second metal are sufficiently low that the carbon produced by the silicide reaction forms a graphene layer on the SiC.

A semiconductor device structure includes a layer of single crystal compound semiconductor material; and a layer of polycrystalline CVD diamond material. The layer of polycrystalline CVD diamond material is bonded to the layer of single crystal compound semiconductor material via a bonding layer having a thickness of less than 25 nm and a thickness variation of no more than 15 nm. The effective thermal boundary resistance as measured by transient thermoreflectance at an interface between the layer of single crystal compound semiconductor material and the layer of polycrystalline CVD diamond material is less than 25 m.sup.2K/GW with a variation of no more than 12 m.sup.2K/GW as measured across the semiconductor device structure. The layer of single crystal compound semiconductor material has one or both of the following characteristics: a charge mobility of at least 1200 cm.sup.2V.sup.−1s.sup.−1; and a sheet resistance of no more than 700 Ω/square.

According to various aspects, a thermal-aware finned field-effect transistor (FinFET) may have a design that can substantially reduce hot spot temperatures and resolve other self-heating problems. More particularly, the FinFET design may use aluminum nitride (AlN) fins that can provide a main thermal exit and a source, drain, and channel formed from materials that can spread or dissipate heat, wherein AlN has a high thermal conductivity compared to silicon such that using AlN to form the fins may substantially increase heat flux to a silicon substrate relative to silicon fins. Furthermore, thermal-efficient materials may be used to form the source, drain, and channel structures to further spread heat and decrease hot spot temperatures.

Methods and apparatuses to produce graphene and nanoparticle catalysts supported on graphene without the use of reducing agents, and with the concomitant production of heat, are provided. The methods and apparatuses employ radiant energy to reduce (deoxygenate) graphite oxide (GO) to graphene, or to reduce a mixture of GO plus one or more metals to produce nanoparticle catalysts supported on graphene. Methods and systems to generate and utilize heat that is produced by irradiating GO, graphene and their metal and semiconductor nanocomposites with visible, infrared and/or ultraviolet radiation, e.g. using sunlight, lasers, etc. are also provided.